US5023203A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of patterning fine line width semiconductor topology using a spacer
Assignee: Electronics and Telecommunications Research Institute
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Filing: 1989-06-23
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Granted: 1991-06-11
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Expires: 2009-06-23
Abstract
Abstract A method for reducing the line widths produced by patterning a semiconduc substrate with a multilayer resist mask employs a `spacer`-forming oxide layer which is non-selectively formed over the mask structure after an aperture for exposing a lower resist layer has been formed in an upper portion of the multilayer mask, but prior to etching a lower resist layer. The oxide layer is subjected to a dry systemic etch to vertically remove material of the oxide layer down to the surface of the lower resist layer. Because of the substantial step coverage of the oxide layer, a `spacer` or `stringer` portion remains along the sidewalls of the original aperture in the upper portion of the mask, whereby the dimensions of the exposure window are reduced. Retaining this sidewall spacer as an integral part of mask structure permits narrower line widths to be replicated in the underlying substrate.
Inventors
- 👤 Sangsoo Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:04
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/26; G03F7/40; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/73; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
174 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; and (d) etching that portion of said underlying mask material within said reduced spacing masking window, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (a) further includes the step of hardening said first resist layer at dry etch systemic conditions of C 2 CLF 5 : 50 sccm, 550 mTorr for one minute.
Claim 2
Independent Claim
174 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; and (d) etching that portion of said underlying mask material within said reduced spacing masking window, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (a) further includes the step of hardening said first resist layer at dry etch systemic conditions of C 2 CLF 5 : 50 sccm, 550 mTorr for one minute.
Claim 3
Independent Claim
309 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; (d) etching that portion of said underlying mask material within said reduced spacing masking window; (e) forming a further masking layer atop the structure resulting from step (d), so as to fill the etched portion of said underlying mask material with material of said further masking layer; and (f) etching underlying mask material adjacent to the filled portion thereof using said further masking layer as a mask, so as to expose said substrate, wherein step (e) comprises non-selectively depositing a layer of further masking material atop the structure resulting from step (d), so as to fill the etched portion of said underlying mask with material of said further masking layer and cover said underlying mask material, and etching said layer of further masking material to said underlying masking material, so as to effectively planarize the structure at the level of said underlying masking material, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (e) includes etching said layer of further masking material to the level of said first resist layer at dry etch systemic conditions of C 2 F 6 /CHF 3 /He=50/100/50 sccm, 550 mTorr and 1675 W.
Claim 4
Independent Claim
309 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; (d) etching that portion of said underlying mask material within said reduced spacing masking window; (e) forming a further masking layer atop the structure resulting from step (d), so as to fill the etched portion of said underlying mask material with material of said further masking layer; and (f) etching underlying mask material adjacent to the filled portion thereof using said further masking layer as a mask, so as to expose said substrate, wherein step (e) comprises non-selectively depositing a layer of further masking material atop the structure resulting from step (d), so as to fill the etched portion of said underlying mask with material of said further masking layer and cover said underlying mask material, and etching said layer of further masking material to said underlying masking material, so as to effectively planarize the structure at the level of said underlying masking material, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (e) includes etching said layer of further masking material to the level of said first resist layer at dry etch systemic conditions of C 2 F 6 /CHF 3 /He=50/100/50 sccm, 550 mTorr and 1675 W.
Claim 5
Independent Claim
210 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; and (d) etching that portion of said underlying mask material within said reduced spacing masking window, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (c) comprises non-selectively forming a layer of dielectric material on the structure resulting from step (b) and thereafter performing a dry etch of said layer of dielectric material to said first resist layer so as to form said dielectric spacer, and wherein step (c) comprises performing said dry etch at conditions of C 2 F 6 /CHF 3 /He=50/100/50 sccm, 550 mTorr and 1675 W.
Claim 6
Independent Claim
210 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming a multilayer mask structure on a semiconductor substrate; (b) forming an aperture through a portion of said multilayer mask structure, so as to expose a prescribed region of underlying mask material; (c) forming a dielectric spacer along a sidewall portion of the aperture formed in step (b), so as to define a reduced spacing masking window over said underlying mask material; and (d) etching that portion of said underlying mask material within said reduced spacing masking window, and wherein step (a) comprises forming a bilevel mask structure by forming a first resist layer on said substrate and a second resist layer on said first resist layer, and wherein step (b) comprises forming said aperture through said second resist layer to expose a prescribed region of said first resist layer, and wherein step (c) comprises non-selectively forming a layer of dielectric material on the structure resulting from step (b) and thereafter performing a dry etch of said layer of dielectric material to said first resist layer so as to form said dielectric spacer, and wherein step (c) comprises performing said dry etch at conditions of C 2 F 6 /CHF 3 /He=50/100/50 sccm, 550 mTorr and 1675 W.
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