US5515985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming fine copper conductor pattern
Assignee: NEC Corp
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Filing: 1994-06-15
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Granted: 1996-05-14
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Expires: 2014-06-15
Abstract
Abstract In a method of forming a fine copper conductor pattern by dry etching, radiation having a predetermined wavelength or greater is applied to the surface of a substrate in order to accelerate the desorption of a compound which is formed of an etching gas and copper in the surface of a copper layer. The fine copper conductor pattern is anisotropically formed based on the linearity of the applied radiation and ions.
Inventors
- 👤 Yoshio Ohshita
- 👤 Nobuki Hosoi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:11
CPC Classifications
C; C23; C23F; C23F4/00; H; H10; H10P; H10P95/00; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
134 words
A method of forming a fine copper conductor pattern by dry etching with the use of light irradiation and a plasma, comprising the steps of: placing a substrate in a chamber, said substrate having a copper film; introducing an etching gas into said chamber; maintaining a pressure in said chamber; applying to a surface of said substrate light irradiation having a wavelength of at least 700 nm which can be absorbed by a compound which is formed of said etching gas and copper of said copper film on a surface of the copper film during dry etching of the copper film to cause electronic excitation in said compound, thereby weakening bonding strength between said compound and said surface; and generating a plasma in said chamber to start the dry etching of the copper film.
Claim 2
Independent Claim
134 words
A method of forming a fine copper conductor pattern by dry etching with the use of light irradiation and a plasma, comprising the steps of: placing a substrate in a chamber, said substrate having a copper film; introducing an etching gas into said chamber; maintaining a pressure in said chamber; applying to a surface of said substrate light irradiation having a wavelength of at least 700 nm which can be absorbed by a compound which is formed of said etching gas and copper of said copper film on a surface of the copper film during dry etching of the copper film to cause electronic excitation in said compound, thereby weakening bonding strength between said compound and said surface; and generating a plasma in said chamber to start the dry etching of the copper film.
Claim 3
Dependent Claim
15 words
A method according to claim 1 wherein said etching gas comprises a gas containing chlorine.
Claim 4
Dependent Claim
27 words
A method according to claim 1 further comprising the step of cooling the substrate to a temperature at which no etching progresses on walls of copper conductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-14 | 1999-11-13 | 2000-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-14 | 2003-11-13 | 2004-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-14 | 2007-11-13 | 2008-05-14 | $7700.00 | Window Closed / Lapsed |