US5183531A
Expired / Lapsed
US
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Dry etching method
Assignee: Sanyo Electric Co Ltd
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Filing: 1990-08-09
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Granted: 1993-02-02
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Expires: 2010-08-09
Abstract
Abstract A dry etching method for etching a substrate such as semiconductors. A vacuum ultraviolet radiation or soft X-rays is used as a photon beam source for generating a reaction of dry etching, and also an etching gas in introduced into a reaction chamber after being activated by a microwave radiation, whereby a reaction of the etching gas with a substrate takes place at a region of the processing material to which the electromagnetic wave is irradiated, and a dry etching is accomplished at the region etched by the reaction of the etching gas.
Inventors
- 👤 Shingo Terakado
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:05
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/28; H10P50/282; H10P50/283; H10P50/69; H10P50/691; H10P50/692; H10P50/73
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
127 words
A dry etching method comprising the steps of: (a) activating an etching gas consisting of SF 6 and Ar by using a microwave; (b) disposing an etch-proof photomask having an opening above a surface of a processing material composed of Si to be etched so that the mask is spaced from the surface; and (c) irradiating a photon beam of vacuum ultraviolet radiation, for exciting a reaction, onto the surface of the processing material to be etched in a condition that there exists an activated etching gas, thereby achieving an etching of said processing material to be etched in an area selected by the opening in the photomask to be irradiated by said photon beam, and cooling said processing material simultaneously with irradiating by said photon beam.
Claim 2
Dependent Claim
127 words
A dry etching method comprising the steps of: (a) activating an etching gas consisting of SF 6 and Ar by using a microwave; (b) disposing an etch-proof photomask having an opening above a surface of a processing material composed of Si to be etched so that the mask is spaced from the surface; and (c) irradiating a photon beam of vacuum ultraviolet radiation, for exciting a reaction, onto the surface of the processing material to be etched in a condition that there exists an activated etching gas, thereby achieving an etching of said processing material to be etched in an area selected by the opening in the photomask to be irradiated by said photon beam, and cooling said processing material simultaneously with irradiating by said photon beam.
Claim 3
Dependent Claim
18 words
A dry etching method according to claim 1, wherein the photomask is composed of Ni or stainless steel.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |