US5512102A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave enhanced CVD system under magnetic field
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-03-28
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Granted: 1996-04-30
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Expires: 2014-03-28
Abstract
Abstract An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:02
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/54; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; H01J37/32192; H01J37/32321; H01J37/32339; H01J37/32431; H01J37/3266; H01J37/32678; H10P72/0402; H10P72/0418; H10P72/0421; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
105 words
A plasma processing apparatus: a chamber; a gas introducing means for introducing a process gas into the chamber; a means for emitting a microwave into the chamber; a means for inducing a magnetic field in the chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; a substrate having a surface to be treated placed in the chamber; exhaust means for exhausting said chamber, said exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump; and a control valve interposed between the chamber and the turbo-molecular pump for controlling the pressure within the chamber.
Claim 2
Dependent Claim
105 words
A plasma processing apparatus: a chamber; a gas introducing means for introducing a process gas into the chamber; a means for emitting a microwave into the chamber; a means for inducing a magnetic field in the chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; a substrate having a surface to be treated placed in the chamber; exhaust means for exhausting said chamber, said exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump; and a control valve interposed between the chamber and the turbo-molecular pump for controlling the pressure within the chamber.
Claim 3
Dependent Claim
24 words
The apparatus of claim 1 wherein the frequency of said microwave is 2.45 GHz and the strength of said magnetic field is 875 Gauss.
Claim 4
Dependent Claim
23 words
The apparatus of claim 1 where a light source emits light into said chamber to further convert said process gas to said plasma.
Claim 5
Dependent Claim
133 words
A plasma processing apparatus comprising: a plasma forming chamber; a gas introducing means for introducing a process gas into the plasma forming chamber; a means for emitting a microwave into the plasma forming chamber; a means for inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; an object treatment chamber adjoining the plasma forming chamber; a substrate having a surface to be treated placed in the object treatment chamber; exhaust means for exhausting said object treatment chamber, said exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and a control valve interposed between the object treatment chamber and the turbo-molecular pump for controlling the pressure within the object treatment chamber.
Claim 6
Dependent Claim
133 words
A plasma processing apparatus comprising: a plasma forming chamber; a gas introducing means for introducing a process gas into the plasma forming chamber; a means for emitting a microwave into the plasma forming chamber; a means for inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; an object treatment chamber adjoining the plasma forming chamber; a substrate having a surface to be treated placed in the object treatment chamber; exhaust means for exhausting said object treatment chamber, said exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and a control valve interposed between the object treatment chamber and the turbo-molecular pump for controlling the pressure within the object treatment chamber.
Claim 7
Dependent Claim
24 words
The apparatus of claim 4 wherein the frequency of said microwave is 2.45 GHz and the strength of said magnetic field is 875 Gauss.
Claim 8
Dependent Claim
25 words
The apparatus of claim 4 where a light source emits light into said object treatment chamber to further convert said process gas to said plasma.
Claim 9
Dependent Claim
98 words
A plasma processing method comprising: introducing a process gas into a chamber; emitting a microwave into the chamber; inducing a magnetic field in the chamber with a magnetic field inducing means to form an electron cyclotron resonance in order to convert said process gas to a plasma; positioning a substrate having a surface to be treated in the chamber; and exhausting said chamber with an exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump and controlling the pressure in the chamber with a control valve interposed between the chamber and the turbo-molecular pump.
Claim 10
Dependent Claim
98 words
A plasma processing method comprising: introducing a process gas into a chamber; emitting a microwave into the chamber; inducing a magnetic field in the chamber with a magnetic field inducing means to form an electron cyclotron resonance in order to convert said process gas to a plasma; positioning a substrate having a surface to be treated in the chamber; and exhausting said chamber with an exhaust means including a turbo-molecular pump interposed between the chamber and a vacuum pump and controlling the pressure in the chamber with a control valve interposed between the chamber and the turbo-molecular pump.
Claim 11
Dependent Claim
24 words
The method of claim 7 wherein the frequency of said microwave is 2.45 GHz and the strength of said magnetic field is 875 Gauss.
Claim 12
Dependent Claim
20 words
The method of claim 7 including emitting light into said chamber to further convert said process gas to said plasma.
Claim 13
Dependent Claim
18 words
The method of claim 7 wherein a layer is deposited on said substrate surface from said process gas.
Claim 14
Dependent Claim
15 words
The method of claim 7 wherein said substrate surface is etched by said process gas.
Claim 15
Dependent Claim
117 words
A plasma processing method comprising: introducing a process gas into a plasma forming chamber; emitting a microwave into the plasma forming chamber; inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; providing an object treatment chamber adjoining the plasma forming chamber; positioning a substrate having a surface to be treated in the object treatment chamber; exhausting said object treatment chamber with an exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and controlling the pressure in the object treatment chamber with a control valve interposed between the object treatment chamber and the turbo-molecular pump.
Claim 16
Dependent Claim
117 words
A plasma processing method comprising: introducing a process gas into a plasma forming chamber; emitting a microwave into the plasma forming chamber; inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to convert said process gas to a plasma; providing an object treatment chamber adjoining the plasma forming chamber; positioning a substrate having a surface to be treated in the object treatment chamber; exhausting said object treatment chamber with an exhaust means including a turbo-molecular pump interposed between the object treatment chamber and a vacuum pump and controlling the pressure in the object treatment chamber with a control valve interposed between the object treatment chamber and the turbo-molecular pump.
Claim 17
Dependent Claim
24 words
The method of claim 12 wherein the frequency of said microwave is 2.45 GHz and the strength of said magnetic field is 875 Gauss.
Claim 18
Dependent Claim
20 words
The method of claim 12 including emitting light into said chamber to further convert said process gas to said plasma.
Claim 19
Dependent Claim
18 words
The method of claim 12 wherein a layer is deposited on said substrate surface from said process gas.
Claim 20
Dependent Claim
15 words
The method of claim 12 wherein said substrate surface is etched by said process gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-30 | 1999-10-30 | 2000-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-30 | 2003-10-30 | 2004-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-30 | 2007-10-30 | 2008-04-30 | $7700.00 | Window Closed / Lapsed |