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JPS5952834A Expired / Lapsed JP ⏱️ 0.0 years remaining

Plasma vapor reactor

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1982-09-20
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Granted: —
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Expires: 2002-09-20
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Abstract

Abstract PURPOSE:To improve productivity by setting up an introducing guide or an exhaust guide for a reactive gas in a cylindrical space, in which a substrate is arranged along the flow of the gas, in order to selectively orient the reactive gas and installing reaction vessels while mutually connecting them. CONSTITUTION:The substrates, one sides thereof have the surfaces to which the reactive gas is formed, are arranged in parallel in the cylindrical space at regular intervals of 3-4cm while their backs are fast stuck mutually by preventing dispersion to the whole sections in the reaction vessel of the reactive gas and utilizing the surfaces, to which the gas is formed, of the substrates, plasma discharge is executed only in the cylindrical space in which the substrates stand close together, and the reactive gas is introduced selectively, thus improving efficiency on the collection of the reactive gas. For prevent the discharge of the reactive gas by the guide 70 of a holder, a clearance 81 is brought to 1cm or less and the reactive gas is flowed in a stratiform shape. Side walls 96 are set up on the outsides of the grooves 95 while being separated by 10-20mm., and the generation of the turbulence of the reactive gas is prevented, thus improving the uniformity of film thickness at the end sections of the substrates 2.

Inventors

  • 👤 Shunpei Yamazaki
  • 👤 山崎 「しゆん」平

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-09 03:55
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/18; H01J37/185; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/511; C23C16/54

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