US5508231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
Assignee: National Semiconductor Corp
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Filing: 1994-10-13
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Granted: 1996-04-16
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Expires: 2014-10-13
Abstract
Abstract A preferred embodiment of an integrated semiconductor device includes a semiconductor die having a hole therethrough. A paddle member includes a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole. A cap layer is bonded to the semiconductor die to completely cover the hole, the paddle member, and the handle member. The second surface of the semiconductor die is bonded to the lead frame. A preferred embodiment of a method of manufacturing an integrated semiconductor device includes the steps of: forming a semiconductor die having a paddle area for isolating sensitive circuitry and an unoccupied area which substantially surrounds the paddle area except for a handle area, forming a trench in the unoccupied area, covering the paddle area, the trench, and the handle area with a sacrificial spacer material, covering the sacrificial spacer material with a cap layer, etching the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die, and bonding the second surface of the semiconductor die to a lead frame.
Inventors
- 👤 James V. Ball
- 👤 Robert A. Pease
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:45
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/10; H10D89/105; H10W; H10W10/00; H10W10/01; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
156 words
A method of manufacturing an integrated semiconductor device, comprising the steps of: (a) forming a semiconductor die having a first surface, a second surface, and a thickness, the first surface having a paddle area for receiving and isolating sensitive circuitry and an unoccupied area which surrounds the paddle area except for a handle area which provides a path for making electrical connection between the paddle area and the rest of the first surface of the semiconductor die; (b) forming a trench in the unoccupied area, the trench having a depth that is less than the thickness of the semiconductor die; (c) forming a cap over the paddle area, the trench, and the handle area, the cap being spaced apart from the paddle area; and (d) etching the second surface of the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die.
Claim 2
Independent Claim
156 words
A method of manufacturing an integrated semiconductor device, comprising the steps of: (a) forming a semiconductor die having a first surface, a second surface, and a thickness, the first surface having a paddle area for receiving and isolating sensitive circuitry and an unoccupied area which surrounds the paddle area except for a handle area which provides a path for making electrical connection between the paddle area and the rest of the first surface of the semiconductor die; (b) forming a trench in the unoccupied area, the trench having a depth that is less than the thickness of the semiconductor die; (c) forming a cap over the paddle area, the trench, and the handle area, the cap being spaced apart from the paddle area; and (d) etching the second surface of the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die.
Claim 3
Dependent Claim
38 words
A method in accordance with claim 1, wherein step (c) comprises the steps of: covering the paddle area, the trench, and the handle area with a sacrificial spacer material; and covering the sacrificial spacer material with the cap.
Claim 4
Dependent Claim
15 words
A method in accordance with claim 1, wherein the cap comprises a layer of polysilicon.
Claim 5
Dependent Claim
45 words
A method in accordance with claim 1, wherein steps (a) and (b) comprise the steps of: forming the unoccupied area and the trench to have shapes which provide for a plurality of handle areas to provide connection between the semiconductor die and the paddle area.
Claim 6
Dependent Claim
38 words
A method in accordance with claim 1, further comprising the step of: bonding the second surface of the semiconductor die to a lead frame so that the paddle area is sealed between the cap and the lead frame.
Claim 7
Dependent Claim
20 words
A method in accordance with claim 1, further comprising the step of: depositing a heated substrate on the paddle area.
Claim 8
Independent Claim
185 words
A method of manufacturing an integrated semiconductor device, comprising the steps of: (a) forming a semiconductor die having a first surface, a second surface, and a thickness, the first surface having a paddle area for isolating sensitive circuitry and an unoccupied area which surrounds the paddle area except for a handle area which provides a path for making electrical connection between the paddle area and the rest of the first surface of the semiconductor die; (b) forming a trench in the unoccupied area, the trench having a depth that is less than the thickness of the semiconductor die; (c) covering the paddle area, the trench, and the handle area with a sacrificial spacer material; (d) covering the sacrificial spacer material with a cap layer; (e) etching the second surface of the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die; and (f) bonding the second surface of the semiconductor die to a lead frame so that the paddle area is sealed between the cap layer and the lead frame.
Claim 9
Independent Claim
185 words
A method of manufacturing an integrated semiconductor device, comprising the steps of: (a) forming a semiconductor die having a first surface, a second surface, and a thickness, the first surface having a paddle area for isolating sensitive circuitry and an unoccupied area which surrounds the paddle area except for a handle area which provides a path for making electrical connection between the paddle area and the rest of the first surface of the semiconductor die; (b) forming a trench in the unoccupied area, the trench having a depth that is less than the thickness of the semiconductor die; (c) covering the paddle area, the trench, and the handle area with a sacrificial spacer material; (d) covering the sacrificial spacer material with a cap layer; (e) etching the second surface of the semiconductor die beneath the paddle area and the trench until the handle area suspends the paddle area within a hole formed in the semiconductor die; and (f) bonding the second surface of the semiconductor die to a lead frame so that the paddle area is sealed between the cap layer and the lead frame.
Claim 10
Dependent Claim
13 words
A method in accordance with claim 7, wherein the cap layer comprises polysilicon.
Claim 11
Dependent Claim
14 words
A method in accordance with claim 7, wherein the sacrificial spacer material comprises oxide.
Claim 12
Dependent Claim
15 words
A method in accordance with claim 7, wherein step (e) is performed by anisotropic etching.
Claim 13
Dependent Claim
23 words
A method in accordance with claim 7, further comprising the step of: etching away the sacrificial spacer material before step (f) is performed.
Claim 14
Dependent Claim
45 words
A method in accordance with claim 7, wherein steps (a) and (b) comprise the step of: forming the unoccupied area and the trench to have shapes which provide for a plurality of handle areas to provide connection between the semiconductor die and the paddle area.
Claim 15
Dependent Claim
35 words
A method in accordance with claim 7, wherein steps (a) and (b) comprise the step of: forming the unoccupied area and the trench so that the handle area has a plurality of angles formed therein.
Claim 16
Dependent Claim
20 words
A method in accordance with claim 7, further comprising the step of: depositing a heated substrate on the paddle area.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-16 | 1999-10-16 | 2000-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-16 | 2003-10-16 | 2004-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-16 | 2007-10-16 | 2008-04-16 | $7700.00 | Window Closed / Lapsed |