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US5496744A
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Method of fabricating complementary poly emitter transistors
Assignee: Toshiba Corp
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Filing: 1994-11-14
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Granted: 1996-03-05
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Expires: 2014-11-14
Abstract
Abstract In a method of manufacturing a bipolar transistor by forming emitter regions of PNP and NPN transistors with diffusion of impurity from the polycrystalline silicon film into the substrate, the B-doped polycrystalline silicon film is deposited on the interlayer insulating film in which the emitter holes of the PNP and NPN transistors are made. Further, the interlayer insulating film is deposited on this film, and the portion of the insulating film which situated on the NPN transistor region is removed. Then, the thermal treatment is carried out in a high-concentration P atmosphere, so as to change the portion of the film which is located on the NPN transistor region to a P-doped polycrystalline silicon film. With this thermal treatment, the P-type and N-type emitter diffusion regions are formed on the base regions of the PNP and NPN transistors. According to the manufacturing method, the emitter regions have a uniform impurity concentration in an appropriate shape, thus reducing the variation and degradation of the characteristics of the device due to downsizing.
Inventors
- 👤 Kazunari Ishimaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:52
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/01; Y10S148/011; Y10S148/018; Y10S148/122; Y10S148/123; Y10S148/124
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
182 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating film on a semiconductor substrate; making at least first and second holes by selectively removing part of said first insulating film; forming a conductive film containing an impurity of a first conduction type, on said first insulation layer having said first and second holes made thereon; forming a second insulating film on said conductive film; exposing a predetermined portion of said conductive film which includes the second hole of said first and second holes, by selectively removing said second insulating film; changing the exposed portion of said conductive film to a second conduction type, by diffusion of an impurity of the second conduction type; and forming a semiconductor region of the first conduction type and a semiconductor region of the second conduction type at the same time in a surface region of said semiconductor substrate, by diffusing the impurity of the first conduction type and the impurity of the second conduction type into said semiconductor substrate through said first and second holes formed in the insulating film.
Claim 2
Independent Claim
182 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating film on a semiconductor substrate; making at least first and second holes by selectively removing part of said first insulating film; forming a conductive film containing an impurity of a first conduction type, on said first insulation layer having said first and second holes made thereon; forming a second insulating film on said conductive film; exposing a predetermined portion of said conductive film which includes the second hole of said first and second holes, by selectively removing said second insulating film; changing the exposed portion of said conductive film to a second conduction type, by diffusion of an impurity of the second conduction type; and forming a semiconductor region of the first conduction type and a semiconductor region of the second conduction type at the same time in a surface region of said semiconductor substrate, by diffusing the impurity of the first conduction type and the impurity of the second conduction type into said semiconductor substrate through said first and second holes formed in the insulating film.
Claim 3
Dependent Claim
64 words
A manufacturing method according to claim 1, wherein said step of changing the exposed portion of said conductive film to the second conduction type, and the step of forming the semiconductor region of the first conduction type and the semiconductor region of the second conduction type at the same time in the surface region of said semiconductor substrate, are carried out in one step.
Claim 4
Dependent Claim
86 words
A manufacturing method according to claim 2, wherein said one step is a vapor phase diffusion in which a thermal treatment is carried out in an atmosphere in which the impurity of the second conduction type is contained, so as to diffuse the impurity of the second conduction type into the exposed portion of the conductive film, and then the impurity of the second conduction type is diffused into the surface region of said semiconductor substrate through the second hole formed in the first insulating film.
Claim 5
Dependent Claim
86 words
A manufacturing method according to claim 2, wherein said one step is a solid phase diffusion in which a thermal treatment is carried out with deposition of a conductive film containing the impurity of the second conduction type, so as to diffuse the impurity of the second conduction type into the exposed portion of the conductive film, and then the impurity of the second conduction type is diffused into the surface region of said semiconductor substrate through the second hole formed in the first insulating film.
Claim 6
Independent Claim
394 words
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a collector region of a second conduction type in a first element region of a semiconductor substrate of a first conduction type, and a collector region of a first conduction type in a second element region thereof; forming a base region of the second conduction type in the second element region on said semiconductor substrate, in which the collector region of the first conduction type is formed, and a base region of the first conduction type in the first element region in which the collector region of the second conduction type is formed; forming a first insulating film on said semiconductor substrate; forming emitter contact holes in portions of said first insulating film which correspond to an emitter region of the first conduction type formed in said second element region, and an emitter region of the second conduction type formed in said first element region; forming a conductor film containing an impurity of the first conduction type, on said first insulating film having the holes therein; forming a second insulating film on said conductor film; exposing a portion of said conductor film which corresponds to a first element region in which the emitter region of the second conduction type is formed, by selectively removing said second insulating film; performing a thermal treatment and diffusion of the impurity of the second conduction type while said portion of said conductor film is exposed, so as to change the impurity of the first conduction type contained in the exposed portion of said conductor film to an impurity of a second conduction type, and diffuse the impurity changed to the second conduction type into a surface region of said semiconductor substrate via the hole formed in the portion of said first insulating film which corresponds to the emitter region formed in said first element region, thereby forming the emitter region of the second conduction type in said first element region, and diffuse the impurity of the first conduction type contained in the non-exposed portion of said conductor film into the surface region of said semiconductor substrate via the hole formed in the portion of said first insulating film which corresponds to the emitter region formed in said second element region, thereby forming the emitter region of the first conduction type in said second element region.
Claim 7
Independent Claim
394 words
A method of manufacturing a semiconductor device, comprising the steps of: selectively forming a collector region of a second conduction type in a first element region of a semiconductor substrate of a first conduction type, and a collector region of a first conduction type in a second element region thereof; forming a base region of the second conduction type in the second element region on said semiconductor substrate, in which the collector region of the first conduction type is formed, and a base region of the first conduction type in the first element region in which the collector region of the second conduction type is formed; forming a first insulating film on said semiconductor substrate; forming emitter contact holes in portions of said first insulating film which correspond to an emitter region of the first conduction type formed in said second element region, and an emitter region of the second conduction type formed in said first element region; forming a conductor film containing an impurity of the first conduction type, on said first insulating film having the holes therein; forming a second insulating film on said conductor film; exposing a portion of said conductor film which corresponds to a first element region in which the emitter region of the second conduction type is formed, by selectively removing said second insulating film; performing a thermal treatment and diffusion of the impurity of the second conduction type while said portion of said conductor film is exposed, so as to change the impurity of the first conduction type contained in the exposed portion of said conductor film to an impurity of a second conduction type, and diffuse the impurity changed to the second conduction type into a surface region of said semiconductor substrate via the hole formed in the portion of said first insulating film which corresponds to the emitter region formed in said first element region, thereby forming the emitter region of the second conduction type in said first element region, and diffuse the impurity of the first conduction type contained in the non-exposed portion of said conductor film into the surface region of said semiconductor substrate via the hole formed in the portion of said first insulating film which corresponds to the emitter region formed in said second element region, thereby forming the emitter region of the first conduction type in said second element region.
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