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US5116770A
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Method for fabricating bipolar semiconductor devices
Assignee: Panasonic Holdings Corp
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Filing: 1989-07-12
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Granted: 1992-05-26
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Expires: 2009-07-12
Abstract
Abstract A method for fabricating a bipolar or field effect-type integrated circuit transistor is provided in which non-cyrstalline semiconductor films and semiconductive regions formed in a single crystal semiconductor substrate and containing high concentrations of impurities are efficiently connected with improved electric characteristics while suppressing the influence of an increase in connection resistance caused by growth of a natural oxide film. Moreover, when a first non-crystalline semiconductor film is removed from a dielectric oxide film serving as a field film and a second non-crystalline semiconductor film is formed as a ribbon-shaped pattern on the exposed field film, a resistor of high accuracy can be formed. An interconnection system having resistors of a high accuracy and a fine size is also disclosed.
Inventors
- 👤 Shuichi Kameyama
- 👤 Hiroyuki Sakai
- 👤 Kazuya Kikuchi
- 👤 Masaoki Kajiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:10
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D1/00; H10D1/40; H10D1/47; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P30/21; H10P30/212; Y; Y10; Y10S; Y10S148/00; Y10S148/01
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
210 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity in a single crystalline semiconductor layer; forming a dielectric film on the semiconductor substrate prior to or after the formation of the first semiconductive region; making at least one opening in the dielectric film to expose the first semiconductive region; forming a first non-crystalline semiconductor film on the surface of the first semiconductive region in the opening; forming a second semiconductive region of the first conductivity type into the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductor film; forming a second non-crystalline semiconductor film on the first semiconductor film; incorporating an impurity of the first conductivity type into the second semiconductor film; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
Claim 2
Independent Claim
210 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity in a single crystalline semiconductor layer; forming a dielectric film on the semiconductor substrate prior to or after the formation of the first semiconductive region; making at least one opening in the dielectric film to expose the first semiconductive region; forming a first non-crystalline semiconductor film on the surface of the first semiconductive region in the opening; forming a second semiconductive region of the first conductivity type into the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductor film; forming a second non-crystalline semiconductor film on the first semiconductor film; incorporating an impurity of the first conductivity type into the second semiconductor film; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
Claim 3
Dependent Claim
35 words
The method according to claim 1, wherein the second non-crystalline semiconductor thin film is formed by forming a second semiconductor film pattern and implanting an impurity of the first conductivity type into the film pattern.
Claim 4
Dependent Claim
27 words
The method according to claim 1, wherein said substrate is formed with a buried semiconductor region of the first conductivity type and is made of P-type silicon.
Claim 5
Dependent Claim
56 words
The method according to claim 1, wherein said first non-crystalline semiconductor film is made of an amorphous semiconductor whereby when the impurity of the first conductivity type is implanted through said first non-crystalline semiconductor film, channeling is prevented to ensure a uniform depth of said semiconductive region of the first conductivity type formed by the implantation.
Claim 6
Independent Claim
271 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity type in a single crystalline semiconductor layer; forming a dielectric film on the semiconductor substrate prior to or after the formation of the first semiconductive region; making at least one opening in the dielectric film to expose the first semiconductive region; forming a first non-crystalline semiconductor film on the surface of the first semiconductive region in the opening; forming a second semiconductive region of the first conductivity type in the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductive film; removing the first semiconductor film on said dielectric film by patterning so that said first semiconductor film is left on the opening; forming a second semiconductor film free of any impurity on the first semiconductor film pattern; subjecting said second semiconductor film to patterning so that the second semiconductor film is left on said first semiconductor film pattern in the opening; forming a second semiconductor film pattern serving as a resistor on said dielectric film from which said first semiconductor film has been removed; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
Claim 7
Independent Claim
271 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity type in a single crystalline semiconductor layer; forming a dielectric film on the semiconductor substrate prior to or after the formation of the first semiconductive region; making at least one opening in the dielectric film to expose the first semiconductive region; forming a first non-crystalline semiconductor film on the surface of the first semiconductive region in the opening; forming a second semiconductive region of the first conductivity type in the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductive film; removing the first semiconductor film on said dielectric film by patterning so that said first semiconductor film is left on the opening; forming a second semiconductor film free of any impurity on the first semiconductor film pattern; subjecting said second semiconductor film to patterning so that the second semiconductor film is left on said first semiconductor film pattern in the opening; forming a second semiconductor film pattern serving as a resistor on said dielectric film from which said first semiconductor film has been removed; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
Claim 8
Dependent Claim
44 words
The method according to claim 5, further comprising selectively incorporating an impurity of the first conductivity type into the second semiconductor film formed in the opening and incorporating an impurity into the second semiconductor film pattern to form the resistor on said dielectric film.
Claim 9
Dependent Claim
56 words
The method according to claim 5, wherein said first non-crystalline semiconductor film is made of an amorphous semiconductor whereby when the impurity of the first conductivity type is implanted through said first non-crystalline semiconductor film, channeling is prevented to ensure a uniform depth of said semiconductive region of the first conductivity type formed by the implantation.
Claim 10
Independent Claim
174 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity type in the single crystalline semiconductor layer; forming a first non-crystalline semiconductor film on the surface of the single crystalline semiconductor layer; forming a second semiconductive region of the first conductivity type into the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductor film; forming a second non-crystalline semiconductor film on the first semiconductor film; incorporating an impurity of the first conductivity into the second semiconductor film; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
Claim 11
Independent Claim
174 words
A method for fabricating a bipolar semiconductor device which comprises: providing a semiconductor substrate having a single crystalline semiconductor layer of a first conductivity type; forming a first semiconductive region of a second conductivity type in the single crystalline semiconductor layer; forming a first non-crystalline semiconductor film on the surface of the single crystalline semiconductor layer; forming a second semiconductive region of the first conductivity type into the first semiconductive region by implanting an impurity of the first conductivity type through the first semiconductor film; forming a second non-crystalline semiconductor film on the first semiconductor film; incorporating an impurity of the first conductivity into the second semiconductor film; and forming a metal electrode on the second non-crystalline semiconductor film after thermal treatment of the semiconductor films and the semiconductive regions, wherein the semiconductor layer of the first conductivity type is a collector, the first semiconductive region of the second conductivity type is a base, and the second semiconductive region of the first conductivity type is an emitter whereby a bipolar semiconductor device is fabricated.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
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