US5490034A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI actuators and microsensors
Assignee: Kopin Corp
•
Filing: 1993-03-05
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Granted: 1996-02-06
•
Expires: 2013-03-05
Abstract
Abstract The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
Inventors
- 👤 Paul M. Zavracky
- 👤 Richard H. Morrison, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:00
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0055; G01L9/0042; G01L9/0072; G01L9/0073; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; G01P15/12; G01P15/123; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828; Y; Y10; Y10T; Y10T29/00; Y10T29/43
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
109 words
A pressure sensor comprising: an insulating layer formed over a substrate, the insulating layer having a cavity formed therein; a flexible diaphragm positioned over the cavity, the diaphragm being formed in a layer of single crystal or essentially single crystal silicon material positioned over a portion of the insulating layer and having a silicon-on-insulator structure; and an insulating clamp structure extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp structure being positioned adjacent to the cavity and attached to the diaphragm for supporting the diaphragm over the cavity, the clamp structure being formed to support the diaphragm over the cavity.
Claim 2
Dependent Claim
109 words
A pressure sensor comprising: an insulating layer formed over a substrate, the insulating layer having a cavity formed therein; a flexible diaphragm positioned over the cavity, the diaphragm being formed in a layer of single crystal or essentially single crystal silicon material positioned over a portion of the insulating layer and having a silicon-on-insulator structure; and an insulating clamp structure extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp structure being positioned adjacent to the cavity and attached to the diaphragm for supporting the diaphragm over the cavity, the clamp structure being formed to support the diaphragm over the cavity.
Claim 3
Dependent Claim
13 words
The pressure sensor of claim 1 wherein the clamp structure comprises silicon nitride.
Claim 4
Dependent Claim
12 words
The pressure sensor of claim 1 wherein the clamp structure comprises polysilicon.
Claim 5
Dependent Claim
13 words
The pressure sensor of claim 1 wherein the insulating layer comprises silicon oxide.
Claim 6
Dependent Claim
14 words
The pressure sensor of claim 1 wherein the support substrate comprises a semiconductor material.
Claim 7
Dependent Claim
12 words
The pressure sensor of claim 5 wherein the semiconductor material is silicon.
Claim 8
Dependent Claim
43 words
The pressure sensor of claim 1 further comprising channels formed in the silicon layer adjacent to a peripheral portion of the diaphragm and in the insulating layer adjacent to the cavity, wherein the clamp is positioned in a channel adjacent to the cavity.
Claim 9
Dependent Claim
30 words
The pressure sensor of claim 1 wherein a portion of the cavity adjacent to the substrate has a cross-sectional area which is larger than a cross-sectional area of the diaphragm.
Claim 10
Dependent Claim
119 words
A pressure sensor comprising: a semiconductor substrate; a layer of insulating material formed on the substrate; a layer of single crystal or essentially single crystal silicon material formed over the insulating layer and having a silicon-on-insulator structure; a flexible diaphragm formed in the silicon layer and supported over a cavity formed in the insulating layer; a channel formed through the layer of silicon material adjacent a peripheral portion of the diaphragm and into the insulating layer adjacent to the cavity; and a clamp structure formed in the channel, the clamp structure being attached to the diaphragm for supporting the diaphragm over the cavity and being formed of an electrical insulating material for electrically isolating the diaphragm from the substrate.
Claim 11
Dependent Claim
119 words
A pressure sensor comprising: a semiconductor substrate; a layer of insulating material formed on the substrate; a layer of single crystal or essentially single crystal silicon material formed over the insulating layer and having a silicon-on-insulator structure; a flexible diaphragm formed in the silicon layer and supported over a cavity formed in the insulating layer; a channel formed through the layer of silicon material adjacent a peripheral portion of the diaphragm and into the insulating layer adjacent to the cavity; and a clamp structure formed in the channel, the clamp structure being attached to the diaphragm for supporting the diaphragm over the cavity and being formed of an electrical insulating material for electrically isolating the diaphragm from the substrate.
Claim 12
Dependent Claim
13 words
The pressure sensor of claim 9 wherein the clamp structure comprises silicon nitride.
Claim 13
Dependent Claim
12 words
The pressure sensor of claim 9 wherein the clamp structure comprises polysilicon.
Claim 14
Dependent Claim
15 words
The pressure sensor of claim 9 wherein the layer of insulating material comprises silicon oxide.
Claim 15
Dependent Claim
12 words
The pressure sensor of claim 9 wherein the semiconductor material is silicon.
Claim 16
Dependent Claim
30 words
The pressure sensor of claim 9 wherein a portion of the cavity adjacent to the substrate has a cross-sectional area which is larger than a cross-sectional area of the diaphragm.
Claim 17
Independent Claim
110 words
A method of making a pressure sensor comprising the steps of: forming an insulating layer on a substrate; forming a layer of single crystal silicon over the insulating layer to provide a silicon-on-insulator structure; forming a diaphragm positioned in or on the layer of single crystal silicon; forming a clamp system extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp system being attached to the diaphragm for supporting the diaphragm over a cavity to be formed in the insulator; and removing a portion of the insulating layer under the diaphragm to form the cavity such that the diaphragm can be displaced.
Claim 18
Independent Claim
110 words
A method of making a pressure sensor comprising the steps of: forming an insulating layer on a substrate; forming a layer of single crystal silicon over the insulating layer to provide a silicon-on-insulator structure; forming a diaphragm positioned in or on the layer of single crystal silicon; forming a clamp system extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp system being attached to the diaphragm for supporting the diaphragm over a cavity to be formed in the insulator; and removing a portion of the insulating layer under the diaphragm to form the cavity such that the diaphragm can be displaced.
Claim 19
Independent Claim
20 words
The method of step 15 wherein the step of forming a clamp system further comprises forming regions of silicon nitride.
Claim 20
Independent Claim
20 words
The method of step 15 wherein the step of forming a clamp system further comprises forming regions of silicon nitride.
Claim 21
Independent Claim
19 words
The method of step 15 wherein the step of forming a clamp system further comprises forming regions of polysilicon.
Claim 22
Independent Claim
19 words
The method of step 15 wherein the step of forming a clamp system further comprises forming regions of polysilicon.
Claim 23
Dependent Claim
93 words
An electromechanical device comprising: a supporting substrate; an insulating layer formed on the substrate, the insulating layer having a cavity formed therein; a micromechanical structure positioned over the cavity, the micromechanical structure formed in a layer of single crystal or essentially single crystal silicon material positioned on the insulating layer and having a silicon-on-insulator structure; and an insulating clamp extending through the silicon layer and the insulating layer at a supporting location of the micromechanical structure, the clamp being formed of an electrical insulator for electrically isolating the micromechanical structure from the substrate.
Claim 24
Dependent Claim
93 words
An electromechanical device comprising: a supporting substrate; an insulating layer formed on the substrate, the insulating layer having a cavity formed therein; a micromechanical structure positioned over the cavity, the micromechanical structure formed in a layer of single crystal or essentially single crystal silicon material positioned on the insulating layer and having a silicon-on-insulator structure; and an insulating clamp extending through the silicon layer and the insulating layer at a supporting location of the micromechanical structure, the clamp being formed of an electrical insulator for electrically isolating the micromechanical structure from the substrate.
Claim 25
Dependent Claim
12 words
The electromechanical device of claim 18 wherein the clamp comprises silicon nitride.
Claim 26
Dependent Claim
13 words
The electromechanical device of claim 18 wherein the micromechanical structure is a bridge.
Claim 27
Dependent Claim
13 words
The electromechanical device of claim 18 wherein the micromechanical structure is a beam.
Claim 28
Dependent Claim
13 words
The electromechanical device of claim 21 wherein the beam is a cantilever beam.
Claim 29
Dependent Claim
13 words
The electromechanical device of claim 18 wherein the insulating layer comprises silicon oxide.
Claim 30
Dependent Claim
14 words
The electromechanical device of claim 18 wherein the support substrate comprises a semiconductor material.
Claim 31
Dependent Claim
12 words
The electromechanical device of claim 24 wherein the support substrate is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-05 | 1999-08-07 | 2000-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-05 | 2003-08-07 | 2004-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-05 | 2007-08-07 | 2008-02-06 | $7700.00 | Window Closed / Lapsed |