US4040172A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing integral transducer assemblies employing built-in pressure limiting
Assignee: Kulite Semiconductor Products Inc
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Filing: 1976-08-02
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Granted: 1977-08-09
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Expires: 1996-08-02
Abstract
Abstract A transducer of an "H" shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.
Inventors
- 👤 Anthony D. Kurtz
- 👤 Joseph R. Mallon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:21
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L19/00; G01L19/14; G01L19/147; G01L9/0051; G01L9/0052; G01L9/0054; H; H01; H01C; H01C10/00; H01C10/10; H01C17/00; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49087; Y10T29/49098; Y10T29/49099; Y10T29/49103
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
100 words
A method for fabricating a semiconductor transducer, comprising the steps of: a. forming a first depression on a first surface in a semiconductor wafer, said depression as formed being of a predetermined depth and having a plurality of "finger-like" projections extending from the periphery, b. diffusing a serpentine piezoresistor within said depression and having a resistance line width approximately equal to said predetermined depth, c. metallizing the surface of said depression to form a series of terminal areas extending into said projections, d. covering said depression with a glass sheet, e. bonding leads to said terminal areas within said projections.
Claim 2
Independent Claim
100 words
A method for fabricating a semiconductor transducer, comprising the steps of: a. forming a first depression on a first surface in a semiconductor wafer, said depression as formed being of a predetermined depth and having a plurality of "finger-like" projections extending from the periphery, b. diffusing a serpentine piezoresistor within said depression and having a resistance line width approximately equal to said predetermined depth, c. metallizing the surface of said depression to form a series of terminal areas extending into said projections, d. covering said depression with a glass sheet, e. bonding leads to said terminal areas within said projections.
Claim 3
Dependent Claim
39 words
The method according to claim 1 including the further steps of: a. forming a second depression on a surface of said semiconductor opposite said first surface, said depression being slightly less in diameter than that of said first depression.
Claim 4
Dependent Claim
31 words
The method according to claim 1 wherein said step of covering includes the step of diffusion bonding said glass sheet to said semiconductor wafer about the periphery surrounding said first depression.
Claim 5
Dependent Claim
16 words
The method according to claim 1 wherein said first depression is formed by etching said wafer.
Claim 6
Dependent Claim
16 words
The method according to claim 1 wherein said predetermined depth is between 0.01 to 1.0 mil.
Claim 7
Dependent Claim
20 words
The method according to claim 2 wherein said second depression is of a depth approximately equal to said predetermined depth.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-08 | 1981-02-07 | 1981-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-08 | 1985-02-07 | 1985-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-08 | 1989-02-07 | 1989-08-09 | $7700.00 | Window Closed / Lapsed |