US3935634A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of fabricating integrated transducer assemblies
Assignee: Kulite Semiconductor Products Inc
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Filing: 1974-09-11
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Granted: 1976-02-03
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Expires: 1994-09-11
Abstract
Abstract A transducer assembly comprises a thin diaphragm of silicon having at least one piezoresistive element located in a central active area of the diaphragm. The diaphragm has a metal ring containing terminal accommodating apertures about the periphery thereof. The metal ring bounds the outermmost portion of the diaphragm designated as a non-active area. An annular housing fabricated from a high dielectric material has a series of wire accommodating grooves in a side wall thereof each one aligned with a predetermined one of said terminal accommodating apertures. The metal ring is secured to the annular housing with the active area of the diaphragm surrounded by a central aperture of the annular housing. The metal ring is secured to the housing by an electrostatic glass bond.
Inventors
- 👤 Anthony D. Kurtz
- 👤 Joseph R. Mallon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:28
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0054; Y; Y10; Y10T; Y10T29/00; Y10T29/42; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
105 words
A method of fabricating a transducer comprising the steps of: a. growing a relatively thin layer of silicon dioxide on a wafer of silicon, b. masking said silicon dioxide to provide a contact pattern, c. depositing impurities according to said pattern to form ohmic contacts. d. growing a thick layer of silicon dioxide over said pattern, e. forming at least one piezoresistor on said wafer to cooperate with said contact pattern, f. forming metal terminals coupled to said contact pattern, g. metalizing a peripheral portion of said thick layer of silicon dioxide to form a surface to which any electrostatic glass bond can be made.
Claim 2
Independent Claim
105 words
A method of fabricating a transducer comprising the steps of: a. growing a relatively thin layer of silicon dioxide on a wafer of silicon, b. masking said silicon dioxide to provide a contact pattern, c. depositing impurities according to said pattern to form ohmic contacts. d. growing a thick layer of silicon dioxide over said pattern, e. forming at least one piezoresistor on said wafer to cooperate with said contact pattern, f. forming metal terminals coupled to said contact pattern, g. metalizing a peripheral portion of said thick layer of silicon dioxide to form a surface to which any electrostatic glass bond can be made.
Claim 3
Dependent Claim
32 words
The method according to claim 1 wherein said relatively thin layer of silicon dioxide is about 2,000 Angstroms and said thick layer is at least five times greater than said thin layer.
Claim 4
Independent Claim
121 words
The method of fabricating a transducer comprising the steps of: a. growing a thin layer of silicon dioxide on a diaphragm of silicon, b. etching said layer according to a contact pattern, c. diffusing a contact pattern on said diaphragm, said process causing an undesired transition to appear at said etched portion, d. growing a thick layer of silicon dioxide on said pattern to substantially eliminate said transition, e. etching an aperture in said thick layer of silicon dioxide to communicate with said diaphragm, f. forming a piezoresistor element in said wafer within said aperture in cooperation with said contact pattern, and g. metalizing a peripheral area of said thick layer to provide a relatively smooth bonding surface for said diaphragm.
Claim 5
Independent Claim
121 words
The method of fabricating a transducer comprising the steps of: a. growing a thin layer of silicon dioxide on a diaphragm of silicon, b. etching said layer according to a contact pattern, c. diffusing a contact pattern on said diaphragm, said process causing an undesired transition to appear at said etched portion, d. growing a thick layer of silicon dioxide on said pattern to substantially eliminate said transition, e. etching an aperture in said thick layer of silicon dioxide to communicate with said diaphragm, f. forming a piezoresistor element in said wafer within said aperture in cooperation with said contact pattern, and g. metalizing a peripheral area of said thick layer to provide a relatively smooth bonding surface for said diaphragm.
Claim 6
Independent Claim
160 words
A method of fabricating a transducer, comprising the steps of: a. growing a first layer of silicon dioxide on a first surface of a silicon wafer, b. forming a contact pattern on said surface using a silicon dioxide masking technique, c. depositing impurities within said contact pattern to form ohmic contacts, d. growing a thicker layer of silicon dioxide over said first layer and said contact pattern, e. etching said first and thick layer of silicon dioxide to form an opening therein, f. depositing at least one piezoresistor element within said opening on said silicon wafer, g. forming terminals about said contact pattern by a metalization technique, said terminals coupled to said element, h. depositing a metal ring about the periphery of said thick layer of silicon dioxide with said terminals encircled by U-shaped apertures in said ring, i. glass bonding said diaphragm to an annular housing with said bond formed between said metal ring a surface of said housing.
Claim 7
Independent Claim
160 words
A method of fabricating a transducer, comprising the steps of: a. growing a first layer of silicon dioxide on a first surface of a silicon wafer, b. forming a contact pattern on said surface using a silicon dioxide masking technique, c. depositing impurities within said contact pattern to form ohmic contacts, d. growing a thicker layer of silicon dioxide over said first layer and said contact pattern, e. etching said first and thick layer of silicon dioxide to form an opening therein, f. depositing at least one piezoresistor element within said opening on said silicon wafer, g. forming terminals about said contact pattern by a metalization technique, said terminals coupled to said element, h. depositing a metal ring about the periphery of said thick layer of silicon dioxide with said terminals encircled by U-shaped apertures in said ring, i. glass bonding said diaphragm to an annular housing with said bond formed between said metal ring a surface of said housing.
Claim 8
Dependent Claim
19 words
The method according to claim 4 wherein: a. said first layer of silicon dioxide is about 2,000 Angstroms thick.
Claim 9
Dependent Claim
19 words
The method according to claim 5 wherein: a. said second layer of silicon dioxide is about 16,000 Angstroms thick.
Claim 10
Dependent Claim
14 words
The method according to claim 4 wherein: a. said deposited metal ring is aluminum.
Claim 11
Dependent Claim
23 words
The method according to claim 4 wherein: a. said bond between said metal ring and said annular housing is a thin glass bond.
Claim 12
Dependent Claim
50 words
The method according to claim 4 wherein said annular housing has a series of grooves in said sidewall which are aligned with said U-shaped apertures in said ring, and a. directing leads from said terminals encircled by said U-shaped apertures and within said grooves in said sidewall of said housing.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-02 | 1979-08-04 | 1980-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-02 | 1983-08-04 | 1984-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-02 | 1987-08-04 | 1988-02-03 | $7700.00 | Window Closed / Lapsed |