US5489797A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Local interconnect structure
Assignee: STMicroelectronics lnc USA
•
Filing: 1995-04-11
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Granted: 1996-02-06
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Expires: 2015-04-11
Abstract
Abstract An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
Inventors
- 👤 Tsiu C. Chan
- 👤 Frank R. Bryant
- 👤 John L. Walters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:30
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
99 words
An interconnect structure for an integrated circuit, comprising: a P-type conductive structure; an N-type conductive structure; a polycrystalline silicon interconnect element connecting the P-type and N-type conductive structures, wherein the interconnect element is doped N-type in a first region in contact with the N-type conductive structure, and wherein the interconnect element is doped P-type in a second region in contact with the P-type conductive structure; and a conductive layer overlying the interconnect element and in contact with the first and second regions, wherein the conductive layer electrically shorts any P-N junction which exists between the first and second regions.
Claim 2
Dependent Claim
99 words
An interconnect structure for an integrated circuit, comprising: a P-type conductive structure; an N-type conductive structure; a polycrystalline silicon interconnect element connecting the P-type and N-type conductive structures, wherein the interconnect element is doped N-type in a first region in contact with the N-type conductive structure, and wherein the interconnect element is doped P-type in a second region in contact with the P-type conductive structure; and a conductive layer overlying the interconnect element and in contact with the first and second regions, wherein the conductive layer electrically shorts any P-N junction which exists between the first and second regions.
Claim 3
Dependent Claim
15 words
The structure of claim 1, wherein the P-type conductive structure resides in a semiconductor substrate.
Claim 4
Dependent Claim
17 words
The structure of claim 2, wherein the P-type conductive structure comprises a drain of a P-channel transistor.
Claim 5
Dependent Claim
16 words
The structure of claim 1, wherein the N-type conductive structure comprises a polycrystalline silicon conductive element.
Claim 6
Dependent Claim
18 words
The structure of claim 4, wherein the N-type conductive structure comprises a gate of a field effect transistor.
Claim 7
Dependent Claim
37 words
The structure of claim 1, wherein the P-type conductive structure comprises a drain of a P-channel load transistor in an SRAM cell, and the N-type conductive structure comprises a polycrystalline silicon gate for a field effect device.
Claim 8
Dependent Claim
14 words
The structure of claim 1, wherein the conductive layer comprises a refractory metal silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-05 | 1999-08-07 | 2000-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-05 | 2003-08-07 | 2004-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-05 | 2007-08-07 | 2008-02-06 | $7700.00 | Window Closed / Lapsed |