Patent US4513332A successfully refreshed from Google Patents.
US5489544A
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US
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Method for making a high capacitance multi-level storage node for high density TFT load SRAMS with low soft error rates
Assignee: International Business Machines Corp
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Filing: 1995-02-10
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Granted: 1996-02-06
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Expires: 2015-02-10
Abstract
Abstract A method for making high capacitance multi-level storage node contact is proposed for high density SRAMs. The proposed contact connects several poly levels to diffusion and to a trench capacitor, in one contact. The high storage node capacitance provided by the trench capacitor substantially reduces the soft error rate probability of the cell. The use of a single contact to connect several levels reduces the area. The contact preferably uses TiN as a barrier layer to reduce dopant diffusion between different poly layers.
Inventors
- 👤 Thekkemadathil V. Rajeevakumar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:21
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
213 words
A method of fabricating an SRAM cell, comprising: providing a substrate; forming a trench in the substrate; forming a capacitor in the trench; forming a first diffusion area in the substrate proximate the capacitor; forming a second diffusion area in the substrate proximate the first diffusion area; forming a first gate insulator on the capacitor and the first diffusion area; forming a first gate electrode on the first gate insulator; forming a second gate insulator contacting the first and second diffusion areas; forming a second gate electrode on the second gate insulator; forming a third gate insulator contacting the second diffusion area; forming a third gate electrode on the third gate insulator; forming a contact on the second diffusion area between the first and second gate electrodes; forming an insulator layer on the first gate node, the second gate node, the third gate node, the contact and exposed portions of the substrate; forming a polysilicon gate layer on the insulator layer; forming a gate insulator layer on the gate layer; forming a polysilicon body on the polysilicon gate insulator layer; forming a single contact through the polysilicon body, the single contact electrically connecting the capacitor to each of the diffusion area, the first gate electrode, the polysilicon gate layer and the polysilicon body.
Claim 2
Independent Claim
213 words
A method of fabricating an SRAM cell, comprising: providing a substrate; forming a trench in the substrate; forming a capacitor in the trench; forming a first diffusion area in the substrate proximate the capacitor; forming a second diffusion area in the substrate proximate the first diffusion area; forming a first gate insulator on the capacitor and the first diffusion area; forming a first gate electrode on the first gate insulator; forming a second gate insulator contacting the first and second diffusion areas; forming a second gate electrode on the second gate insulator; forming a third gate insulator contacting the second diffusion area; forming a third gate electrode on the third gate insulator; forming a contact on the second diffusion area between the first and second gate electrodes; forming an insulator layer on the first gate node, the second gate node, the third gate node, the contact and exposed portions of the substrate; forming a polysilicon gate layer on the insulator layer; forming a gate insulator layer on the gate layer; forming a polysilicon body on the polysilicon gate insulator layer; forming a single contact through the polysilicon body, the single contact electrically connecting the capacitor to each of the diffusion area, the first gate electrode, the polysilicon gate layer and the polysilicon body.
Claim 3
Dependent Claim
29 words
The method of claim 1, wherein the step of forming a capacitor in the trench comprises: lining the trench with dielectric material; filling the trench with a conductive material.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the single contact is vertically disposed in the SRAM cell.
Claim 5
Dependent Claim
17 words
The method of claim 3, further comprising substantially surrounding the vertical contact with a diffusion barrier layer.
Claim 6
Dependent Claim
29 words
The method of claim 3, wherein the step of forming a capacitor in the trench comprises: lining the trench with dielectric material; filling the trench with a conductive material.
Claim 7
Dependent Claim
26 words
The method of claim 1, wherein the polysilicon body is disposed directly above the first gate electrode, the first diffusion area and the second gate electrode.
Claim 8
Dependent Claim
81 words
The method of claim 1, wherein forming a single contact comprises etching portions of the polysilicon body, the gate insulator layer, the polysilicon gate layer, the insulator layer, the first gate electrode and the first gate insulator to expose a portion of the capacitor, thereby forming a single contact trench in the cell; lining the single contact trench with a layer of TiSi 2 and then a layer of TiN to form a lined trench; filling the lined trench with polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-05 | 1999-08-07 | 2000-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-05 | 2003-08-07 | 2004-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-05 | 2007-08-07 | 2008-02-06 | $7700.00 | Window Closed / Lapsed |