US4997783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Static ram cell with trench pull-down transistors and buried-layer ground plate
Assignee: Renesas Electronics America Inc
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Filing: 1989-07-25
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Granted: 1991-03-05
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Expires: 2009-07-25
Abstract
Abstract Disclosed is a (4T-2R) SRAM cell and method which achieves a much reduced cell area through the combined use of vertical trench pull-down n-channel transistors and a buried-layer ground plate. The reduced cell area allows the fabrication of a higher density SRAM for a given set of lithographic rules. The cell structure also allows the implementation of a (6T) SRAM cell with non-self-aligned polysilicon p-channel pull-up transistors without appreciably enlarging the cell area.
Inventors
- 👤 Fu-Chieh Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:07
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/15; H10W; H10W15/00; H10W15/01; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
147 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least a first and a second trench into said grown epitaxial silicon layer so that the bottom of each of said first and said second trench is inside said buried layer, said first and said second trench being electrically interconnected by said buried layer; forming a dielectric in said trench; and forming a first conductive layer as a gate electrode for at least a first and a second trench transistor as well as a gate for a first and a second surface transistor;
Claim 2
Independent Claim
147 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least a first and a second trench into said grown epitaxial silicon layer so that the bottom of each of said first and said second trench is inside said buried layer, said first and said second trench being electrically interconnected by said buried layer; forming a dielectric in said trench; and forming a first conductive layer as a gate electrode for at least a first and a second trench transistor as well as a gate for a first and a second surface transistor;
Claim 3
Independent Claim
198 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least a first and a second trench into said grown epitaxial silicon layer so that the bottom of each of said first and said second trench is inside said buried layer, said first and said second trench being electrically interconnected by said buried layer; forming a dielectric in said trench; forming a first conductive layer as a gate electrode for at least a first and a second trench transistor as well as a gate for a first and a second surface transistor; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a second conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 4
Independent Claim
198 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least a first and a second trench into said grown epitaxial silicon layer so that the bottom of each of said first and said second trench is inside said buried layer, said first and said second trench being electrically interconnected by said buried layer; forming a dielectric in said trench; forming a first conductive layer as a gate electrode for at least a first and a second trench transistor as well as a gate for a first and a second surface transistor; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a second conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |