US4876215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a static ram cell with trench pull-down transistors and buried-layer ground plate
Assignee: Renesas Electronics America Inc
•
Filing: 1988-08-23
•
Granted: 1989-10-24
•
Expires: 2008-08-23
Abstract
Abstract Disclosed is a (4T-2R) SRAM cell and method which achieves a much reduced cell area through the combined use of vertical trench pull-down n-channel transistors and a buried-layer ground plate. The reduced cell area allows the fabrication of a higher density SRAM for a given set of lithographic rules. The cell structure also allows the implementation of a (6T) SRAM cell with non-self-aligned polysilicon p-channel pull-up transistors without appreciably enlarging the cell area.
Inventors
- 👤 Fu-Chieh Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:49
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/15; H10W; H10W15/00; H10W15/01; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
138 words
In a method of fabricating a SRAM cell, of the type wherein p- well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing the epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 2
Dependent Claim
138 words
In a method of fabricating a SRAM cell, of the type wherein p- well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing the epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; masking for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 3
Independent Claim
166 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming a first conductive layer on said grown epitaxial silicon layer for transistor gates sources and drains; masking for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a second conductive layer as a gate electrode for a trench transistor; patterning said second conductive layer; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a third conductive layer; patterning said third conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 4
Independent Claim
166 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming a first conductive layer on said grown epitaxial silicon layer for transistor gates sources and drains; masking for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a second conductive layer as a gate electrode for a trench transistor; patterning said second conductive layer; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a third conductive layer; patterning said third conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 5
Dependent Claim
53 words
A method of fabricating a SRAM cell as recited in claim 2 wherein before the step of patterning said second conductive layer is performed, the step of forming an additional conductive layer is performed directly on top of said second poly-silicon layer so as to form gate electrodes for non-self-aligned p-channel poly-silicon transistors.
Claim 6
Independent Claim
196 words
A method of fabricating a SRAM cell comprising the combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well region in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; forming a first conductive layer on said grown epitaxial silicon layer for transistor gates sources and drains; depositing a masking layer for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a second conductive layer as a gate electrode for a trench transistor; depositing material for use in planarizing said trench; etching back said trench planarizing material to planarize said trench; patterning said second conductive layer; depositing a masking layer for at least one via hole; patterning said via hole masking layer to form said via hole; forming a third conductive layer; patterning said third conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 7
Independent Claim
196 words
A method of fabricating a SRAM cell comprising the combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well region in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; performing a pull-down transistor threshold voltage adjustment; forming a first conductive layer on said grown epitaxial silicon layer for transistor gates sources and drains; depositing a masking layer for trench formation; etching at least one trench into said grown epitaxial silicon layer so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a second conductive layer as a gate electrode for a trench transistor; depositing material for use in planarizing said trench; etching back said trench planarizing material to planarize said trench; patterning said second conductive layer; depositing a masking layer for at least one via hole; patterning said via hole masking layer to form said via hole; forming a third conductive layer; patterning said third conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 8
Dependent Claim
53 words
A method of fabricating a SRAM cell as recited in claim 4 wherein before the step of patterning said second conductive layer is performed, the step of forming an additional conductive layer is performed directly on top of said second poly-silicon layer so as to form gate electrodes for non-self-aligned p-channel poly-silicon transistors.
References Cited (Backward Citations)
US4105475A
Cited
US4194283A
Cited
US4609835A
Cited
US4481524A
Cited
US4453175A
Cited
US4455740A
Cited
US4326332A
Cited
US4797717A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |