US4987090A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Static ram cell with trench pull-down transistors and buried-layer ground plate
Assignee: Renesas Electronics America Inc
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Filing: 1989-07-25
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Granted: 1991-01-22
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Expires: 2009-07-25
Abstract
Abstract Disclosed is a (4T-2R) SRAM cell and method which achieves a much reduced cell area through the combined use of vertical trench pull-down n-channel transistors and a buried-layer ground plate. The reduced cell area allows the fabrication of a higher density SRAM for a given set of lithographic rules. The cell structure also allows the implementation of a (6T) SRAM cell with non-self-aligned poly-silicon p-channel pull-up transistors without appreciably enlarging the cell area.
Inventors
- 👤 Fu-Chieh Hsu
- 👤 Chun-Chiu D. Wong
- 👤 Ciaran P. Hanrahan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:46
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/15; H10W; H10W15/00; H10W15/01; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
113 words
In a method of fabricating a SRAM cell, wherein p-well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a psubstrate; growing the epitaxial silicon layer on said substrate; performing a pull-down transistor threshold voltage adjustment; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 2
Dependent Claim
113 words
In a method of fabricating a SRAM cell, wherein p-well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a psubstrate; growing the epitaxial silicon layer on said substrate; performing a pull-down transistor threshold voltage adjustment; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 3
Dependent Claim
144 words
In a method of fabricating a SRAM cell, wherein p-well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a psubstrate; growing the epitaxial silicon layer on said substrate; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer including, masking and depositing PDO/CVD oxide to define a drain area for said trench transistor, implanting said trench transistor drain area, forming an oxide spacer ring surrounding said PDO/CVD oxide, and masking and etching to form said trench; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 4
Dependent Claim
144 words
In a method of fabricating a SRAM cell, wherein p-well regions, active island regions, conductive layers, loads, interconnections, insulators, contact hole openings, metal line definitions, and passivations are all formed on an epitaxial silicon layer, the improvement comprising in combination the steps of: forming an isolated, buried, n+ layer on a psubstrate; growing the epitaxial silicon layer on said substrate; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer including, masking and depositing PDO/CVD oxide to define a drain area for said trench transistor, implanting said trench transistor drain area, forming an oxide spacer ring surrounding said PDO/CVD oxide, and masking and etching to form said trench; forming a dielectric in said trench; and forming a conductive layer as a gate electrode for a trench transistor.
Claim 5
Dependent Claim
46 words
In a method of fabricating a SRAM cell as recited in claim 2, the improvement further comprising the step of performing a pull-down transistor threshold voltage adjustment before the step of forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring.
Claim 6
Independent Claim
157 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a first conductive layer as a gate electrode for at least one trench transistor and at least one surface transistor; patterning said first conductive layer; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a second conductive layer; patterning said second conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 7
Independent Claim
157 words
A method of fabricating a SRAM cell comprising in combination the steps of: forming an isolated, buried, n+ layer on a p- substrate; growing an epitaxial silicon layer on said substrate; forming p- well regions in said grown epitaxial silicon layer; forming active island regions in said grown epitaxial silicon layer; forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer; forming a dielectric in said trench; forming a first conductive layer as a gate electrode for at least one trench transistor and at least one surface transistor; patterning said first conductive layer; forming a dielectric for at least one via hole; patterning said via hole dielectric to form said via hole; forming a second conductive layer; patterning said second conductive layer; and implanting to form loads and interconnections followed by insulators, contact hole openings, metal line definitions and passivations.
Claim 8
Dependent Claim
43 words
A method of fabricating a SRAM cell as recited in claim 4 further comprising the step of performing a pull-down transistor threshold voltage adjustment before the step of forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring.
Claim 9
Dependent Claim
84 words
A method of fabricating a SRAM cell as recited in claim 4 wherein said step of forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring so that the bottom of said trench is inside said buried layer includes the steps of, masking and depositing PDO/CVD oxide to define a drain area for said trench transistor, implanting said trench transistor drain area, forming an oxide spacer ring surrounding said PDO/CVD oxide, and masking and etching to form said trench.
Claim 10
Dependent Claim
43 words
A method of fabricating a SRAM cell as recited in claim 6 further comprising the step of performing a pull-down transistor threshold voltage adjustment before the step of forming in said grown epitaxial silicon layer at least one trench with a self-aligned drain-ring.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-21 | 1994-07-23 | 1995-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-21 | 1998-07-23 | 1999-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-21 | 2002-07-23 | 2003-01-22 | $7700.00 | Window Closed / Lapsed |