Method and apparatus for producing conductive layers or structures for VLSI circuits

Claim 1

A multi-stage method for producing conductive layers for VLSI circuits on a semiconductor substrate, a conductive layer at least partially covering a surface of the substrate, the method having at least two method stages in at least two chambers of a high-vacuum system while maintaining the high-vacuum conditions for the semiconductor substrate, in a plurality of method stages, the method comprising the steps of: plasma etching a surface of the semiconductor substrate for removing oxides; applying a titanium layer 10 through 100 nm thick on the surface of the semiconductor substrate using a sputtering process or by chemical deposition from a vapor phase at a temperature in the range from 200° C. through 450° C.; applying a titanium nitride layer with a CVD process at a temperature of 200° C. through 450° C. using a nitrogen-containing, organic titanium compound that is excited by one of thermal, optical and plasma excitation; applying one of an aluminum layer or an aluminum alloy layer with a CVD process at a temperature from 200° C. through 450° C. using an organic aluminum compound that is excited by at least one of thermal, optical and plasma excitation; applying a metallic layer that contains at least one of copper, refractory metal palladium, and silicon with a sputtering process or a CVD process; and brief-duration heating of the semiconductor substrate to a temperature up to 500° C. for 10 seconds through 120 seconds in an inert gas atmosphere for alloy formation.