EP0254035A1
Expired / Lapsed
EP
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Electrodes for semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1987-06-19
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Granted: —
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Expires: 2007-06-19
Abstract
Abstract On a semiconductor film (11) to function as a lead-out electrode of a semiconductor element, a metal silicide film (13) and a metal nitride film (14) are successively provided, whereby alloying and inferior contact resistances attributed to heat during wiring with aluminum can be effectively suppressed, so that the reliability of a semiconductor device can be enhanced.
Inventors
- 👤 Nobuo Owada
- 👤 Mitsuaki Horiuchi
- 👤 Masatoshi Tsuneoka
- 👤 Tadayuki Taneoka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 09:14
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/40; H10P14/416
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
55 words
A semiconductor device having an electrode (6, 8, 15) provided on a semiconductor film (5, 7, 11), characterized in that a metal silicide film (13) and an electrically conductive metal nitride film (14) are successively provided on said semiconductor film (5, 7, 11), said electrode (6, 8, 15) being provided on said nitride film (14).
Claim 2
Dependent Claim
55 words
A semiconductor device having an electrode (6, 8, 15) provided on a semiconductor film (5, 7, 11), characterized in that a metal silicide film (13) and an electrically conductive metal nitride film (14) are successively provided on said semiconductor film (5, 7, 11), said electrode (6, 8, 15) being provided on said nitride film (14).
Claim 3
Dependent Claim
93 words
A semiconductor device comprising: (a) a semiconductor substrate (1) having a principal surface; (b) a plurality of semiconductor elements (22, 23) formed on said principal surface, and each having at least one electrode; and (c) wiring layers (15) connecting selected ones of the electrodes of said plurality of semiconductor elements, and each including a metal film; characterized in that said electrode of said semiconductor elements includes a semiconductor layer (11) provided nearer to said principal surface, and a metal nitride film (14) interposed between said semiconductor layer (11) and said wiring layer (15).
Claim 4
Dependent Claim
93 words
A semiconductor device comprising: (a) a semiconductor substrate (1) having a principal surface; (b) a plurality of semiconductor elements (22, 23) formed on said principal surface, and each having at least one electrode; and (c) wiring layers (15) connecting selected ones of the electrodes of said plurality of semiconductor elements, and each including a metal film; characterized in that said electrode of said semiconductor elements includes a semiconductor layer (11) provided nearer to said principal surface, and a metal nitride film (14) interposed between said semiconductor layer (11) and said wiring layer (15).
Claim 5
Dependent Claim
25 words
The device of Claim 2, wherein a metal silicide film (13) is further interposed between said semiconductor layer (11) and said metal nitride film (14).
Claim 6
Independent Claim
25 words
The device of any of Claims 1 to 3, wherein said electrode (6, 8, 15) or wiring layer (15) is made of an Al-alloy film.
Claim 7
Dependent Claim
22 words
The device of Claim 1, 3 or 4, wherein said metal silicide film (13) is a platinum silicide or palladium silicide film.
Claim 8
Independent Claim
20 words
The device of any of Claims 1 to 5, wherein said metal nitride film (14) is a titanium nitride film.
Claim 9
Independent Claim
19 words
The device of any of Claims 1 to 6, wherein said semiconductor film (11) is a polycrystalline Si film.
Claim 10
Dependent Claim
15 words
The device of Claim 7, wherein said polycrystalline Si film (11) is doped with boron.
Claim 11
Dependent Claim
30 words
The device of Claim 7, wherein said polycrystalline Si film (11) contains arsenic or phosphorus in an amount smaller than the limit of solid-solubility of the respective element in Si.
Claim 12
Independent Claim
28 words
The device of any of Claims 7 to 9, wherein the crystal grain size in said polycrystalline Si film (11) is smaller than the thickness of said film.
Claim 13
Independent Claim
24 words
The device of any of Claims 1 to 10, wherein said electrode (15) is an electrode of a transistor, specifically of a bipolar transistor.
Claim 14
Dependent Claim
14 words
The device of Claim 11, wherein said electrode (15) is a base lead-out electrode
Claim 15
Dependent Claim
24 words
The device of Claim 12, wherein a base region (4) connected to said base lead-out electrode (15) is made of a p-type impurity layer.
References Cited (Backward Citations)
JPS561556A
Cited
US4533935A
Cited
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