Chip carrier for enabling production of high performance microwave semiconductor device by disposing semiconductor chip thereon

Claim 2

A chip carrier for a semiconductor chip, the chip having a specified thickness and lateral configuration and size, comprising: a conductive holder having a main surface including a mounting surface portion for mounting a semiconductor chip thereon and a peripheral surface portion surrounding the mounting surface portion; and an insulative collar member disposed on and affixed to the peripheral surface portion and having inner wall surfaces, transverse to the main surface and surrounding the mounting surface portion thereof, the collar member defining a recess of a depth, measured from the mounting surface portion of the main surface, and of a lateral configuration and size for receiving therein and positioning said semiconductor chip on said conductive holder.

Claim 3

A chip carrier as claimed in claim 1, wherein said semiconductor chip has a bottom surface specified at a ground potential level for operation of said semiconductor chip, said bottom surface of said chip being affixed to and electrically connected to said mounting surface portion of said conductive holder and said conductive holder being used to bring out said ground potential level of said bottom surface of said semiconductor chip for external electrical connection.

Claim 4

A chip carrier as claimed in claim 1, wherein said conductive holder is made of gold-plated copper, and said insulative collar member is made of ceramic.

Claim 5

A chip carrier as claimed in claim 1, wherein said chip mounting surface portion has lateral edges bordered by the inner wall surfaces of said insulative collar member.

Claim 6

A chip carrier as claimed in claim 4, further comprising a solder layer on said chip mounting surface portion and bonded to the bottom surface of said semiconductor chip received in said recess, thereby to fix said semiconductor chip thereon.

Claim 7

A chip carrier as claimed in claim 5, wherein said solder layer is made of a gold-tin alloy.

Claim 8

A chip carrier as claimed in claim 1, wherein a space between the lateral periphery of said semiconductor chip and the corresponding inner wall surfaces of said insulative collar member is less than 100 μm.

Claim 9

A chip carrier as claimed in claim 7, wherein a space between the lateral periphery of said semiconductor chip and the corresponding inner wall surfaces of said insulative collar member is less than 50 μm.

Claim 10

A chip carrier as claimed in claim 1, wherein said semiconductor chip is made of a compound semiconductor material.

Claim 11

A chip carrier as claimed in claim 9, wherein said semiconductor chip is made of Gallium Arsenide.

Claim 12

A chip carrier as claimed in claim 1, wherein the bottom surface of said semiconductor ship is plated with gold.

Claim 13

A chip carrier as claimed in claim 1, wherein said semiconductor chip comprises a plurality of field effect transistors connected so as to constitute an amplifier circuit.

Claim 14

A chip carrier as claimed in claim 1, wherein said semiconductor chip is a monolithic microwave integrated circuit chip.

Claim 15

A microwave semiconductor device comprising: a package having an input terminal and an output terminal; a semiconductor chip, including an amplifier circuit having input and output sides and operative for amplifying input microwave signals supplied to said input side and producing corresponding, amplified microwave signals at said output side thereof; a chip carrier, said semiconductor chip being received on and affixed to said chip carrier and said chip carrier having an insulative collar member mounted thereon in surrounding relationship relative to said semiconductor chip as received on and affixed to said chip carrier, said chip carrier being disposed on and affixed to said package at a position between said input and output terminals thereof; an input matching circuit, provided in said package and operatively connected between said input terminal thereof and said input side of said semiconductor chip, for carrying out impedance matching at said input side of said amplifier circuit; an output matching circuit, provided in said package and operatively connected between said output side of said semiconductor chip and said output terminal of said package, for carrying out impedance matching at said output side of said amplifier circuit; and said chip carrier being provided between said input matching circuit and said output matching circuit in said package.

Claim 16

A microwave semiconductor device comprising: a package having an input terminal and an output terminal; a semiconductor chip, including an amplifier circuit having input and output sides and operative for amplifying input microwave signals supplied to said input side and producing corresponding, amplified microwave signals at said output side thereof; a chip carrier, said semiconductor chip being received on and affixed to said chip carrier and said chip carrier having an insulative collar member mounted thereon in surrounding relationship relative to said semiconductor chip as received on and affixed to said chip carrier, said chip carrier being disposed on and affixed to said package at a position between said input and output terminals thereof; an input matching circuit, provided in said package and operatively connected between said input terminal thereof and said input side of said semiconductor chip, for carrying out impedance matching at said input side of said amplifier circuit; an output matching circuit, provided in said package and operatively connected between said output side of said semiconductor chip and said output terminal of said package, for carrying out impedance matching at said output side of said amplifier circuit; and said chip carrier being provided between said input matching circuit and said output matching circuit in said package.

Claim 17

A microwave semiconductor device as claimed in claim 14, further comprising a first plurality of bonding wires interconnecting said input matching circuit and said input side of said semiconductor chip, and a second plurality of bonding wires interconnecting said output side of said semiconductor chip and said output matching circuit.

Claim 18

A microwave semiconductor device as claimed in claim 14, wherein said microwave semiconductor device further comprises: an input transmission line, inserted and connected between said input terminal and said input matching circuit, for carrying out a fine control of the impedance matching at the input side of said amplifier circuit; and an output transmission line, inserted between said output matching circuit and said output terminal, for carrying out a fine control of the impedance matching at the output side of said amplifier circuit.

Claim 19

A microwave semiconductor device as claimed in claim 16, further comprising a first plurality of bonding wires interconnecting said input transmission line and said input matching circuit, and a second plurality of bonding wires interconnecting said output side of said output matching circuit and said output transmission line.

Claim 20

A microwave semiconductor device as claimed in claim 14, wherein said microwave semiconductor device comprises a plurality of groups, each group comprising a corresponding said chip carrier having a respective said semiconductor chip fixed thereon, a respective said input matching circuit, and a respective said output matching circuit.

Claim 21

A microwave semiconductor device as claimed in claim 14, wherein said chip carrier comprises: a conductive holder having a main surface including a mounting surface portion on which said semiconductor chip is mounted and a peripheral surface portion surrounding the mounting surface portion; and said insulative collar member is disposed on and affixed to the peripheral surface portion and has inner wall surfaces, transverse to the main surface and surrounding the mounting surface portion of the conductive holder, the inner wall surface of the insulative collar member and the mounting surface portion of the main surface defining a recess, of a depth measured from the mounting surface portion of the main surface and of a lateral configuration and size, for receiving therein and thereby positioning said semiconductor chip on said conductive holder.

Claim 22

A microwave semiconductor device as claimed in claim 19, wherein said semiconductor chip has a bottom surface specified at a ground potential level for operation of said semiconductor chip, said bottom surface of said chip being affixed to and electrically connected to said mounting surface portion of said conducting holder and said conductive holder being used to bring out said ground potential level of said bottom surface of said semiconductor chip for external electrical connection.

Claim 23

A microwave semiconductor device as claimed in claim 19, wherein said conductive holder is made of gold-plated copper, and said insulative collar member is made of ceramic.

Claim 24

A microwave semiconductor device as claimed in claim 19, wherein said chip mounting portion has lateral edges bordered by the inner wall surfaces of said insulative collar member.

Claim 25

A microwave semiconductor device as claimed in claim 22, further comprising a solder layer on said chip mounting surface portion and bonded to the bottom surface of said semiconductor chip received in said recess, thereby to fix said semiconductor chip thereon.

Claim 26

A microwave semiconductor device as claimed in claim 23, wherein said solder layer is made of a gold-tin alloy.

Claim 27

A microwave semiconductor device as claimed in claim 19, wherein a space between the lateral periphery of said semiconductor chip and the corresponding inner wall surfaces of said insulative collar member is less than 100 μm.

Claim 28

A microwave semiconductor device as claimed in claim 25, wherein a space between the lateral periphery of said semiconductor chip and the corresponding inner wall surfaces of said insulative collar member is less than 50 μm.

Claim 29

A microwave semiconductor device as claimed in claim 19, wherein said semiconductor chip is made of a compound semiconductor material.

Claim 30

A microwave semiconductor device as claimed in claim 27, wherein said semiconductor chip is made of Gallium Arsenide.

Claim 31

A microwave semiconductor device as claimed in claim 19, wherein the bottom surface of said semiconductor ship is plated with gold.

Claim 32

A microwave semiconductor device as claimed in claim 19, wherein said semiconductor chip comprises a plurality of field effect transistors connected so as to constitute an amplifier circuit.

Claim 33

A microwave semiconductor device as claimed in claim 19, wherein said semiconductor chip is a monolithic microwave integrated circuit chip.

Claim 34

A chip carrier for a semiconductor chip, the chip having upper and lower main surfaces defining a specified thickness of the chip therebetween and a specified lateral configuration and size, comprising: a conductive holder having a main surface including a chip mounting surface portion, of substantially the same said lateral configuration and size of the chip, for mounting the semiconductor chip thereon, a peripheral surface portion surrounding the mounting surface portion, and outer wall surfaces substantially transverse to the mounting and peripheral surfaces thereof; and an insulative collar member having upper and lower surfaces and inner and outer wall surfaces transverse to the upper and lower surfaces, the lower surface being disposed on and affixed to the peripheral surface portion of the holder, the outer wall surfaces corresponding to and being substantially aligned with the corresponding outer wall surfaces of the holder, and the inner wall surfaces surrounding the mounting surface portion and defining therewithin a recess of a depth, measured from the mounting surface portion of the main surface of the holder, and of a lateral configuration and size, for substantially receiving therein and thereby positioning said semiconductor chip on said mounting surface portion or said conductive holder and with the lower surface of the chip below the upper surface of the insulative collar member and with the upper surface of the chip no lower than the upper surface of the insulative collar member.

Claim 35

A chip carrier for a semiconductor chip, the chip having upper and lower main surfaces defining a specified thickness of the chip therebetween and a specified lateral configuration and size, comprising: a conductive holder having a main surface including a chip mounting surface portion, of substantially the same said lateral configuration and size of the chip, for mounting the semiconductor chip thereon, a peripheral surface portion surrounding the mounting surface portion, and outer wall surfaces substantially transverse to the mounting and peripheral surfaces thereof; and an insulative collar member having upper and lower surfaces and inner and outer wall surfaces transverse to the upper and lower surfaces, the lower surface being disposed on and affixed to the peripheral surface portion of the holder, the outer wall surfaces corresponding to and being substantially aligned with the corresponding outer wall surfaces of the holder, and the inner wall surfaces surrounding the mounting surface portion and defining therewithin a recess of a depth, measured from the mounting surface portion of the main surface of the holder, and of a lateral configuration and size, for substantially receiving therein and thereby positioning said semiconductor chip on said mounting surface portion or said conductive holder and with the lower surface of the chip below the upper surface of the insulative collar member and with the upper surface of the chip no lower than the upper surface of the insulative collar member.

Claim 36

A chip carrier as claimed in claim 32, wherein the peripheral surface portion of the conductive holder is disposed at a lower level than the level of the mounting .surface portion of the holder.