US5468689A
Expired / Lapsed
US
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Method for preparation of silicon nitride gallium diffusion barrier for use in molecular beam epitaxial growth of gallium arsenide
Assignee: AT&T Inc
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Filing: 1993-11-16
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Granted: 1995-11-21
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Expires: 2013-11-16
Abstract
Abstract A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures, modulators and silicon MOSFET structures.
Inventors
- 👤 John E. Cunningham
- 👤 Keith W. Goossen
- 👤 William Y. Jan
- 👤 James A. Walker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
Method for the preparation of a silicon nitride gallium diffusion barrier upon a silicon substrate prior to the molecular beam epitaxial growth of gallium arsenide on silicon sub-micron metal oxide semiconductor electronics which comprises the steps of (a) depositing a reflowable glass layer upon a (100) silicon substrate oriented 3 degrees off axis bearing a thin film of silicon dioxide, (b) subjecting the resultant structure to a gaseous mixture comprising nitrogen and silane in a plasma enhanced chemical vapor deposition chamber, the ratio of nitrogen to silane being less than 300:1, thereby forming a silicon nitride layer, and (c) depositing gallium arsenide by molecular beam epitaxial growth on said silicon nitride layer.
Claim 2
Dependent Claim
112 words
Method for the preparation of a silicon nitride gallium diffusion barrier upon a silicon substrate prior to the molecular beam epitaxial growth of gallium arsenide on silicon sub-micron metal oxide semiconductor electronics which comprises the steps of (a) depositing a reflowable glass layer upon a (100) silicon substrate oriented 3 degrees off axis bearing a thin film of silicon dioxide, (b) subjecting the resultant structure to a gaseous mixture comprising nitrogen and silane in a plasma enhanced chemical vapor deposition chamber, the ratio of nitrogen to silane being less than 300:1, thereby forming a silicon nitride layer, and (c) depositing gallium arsenide by molecular beam epitaxial growth on said silicon nitride layer.
Claim 3
Dependent Claim
143 words
Method for the preparation of a gallium diffusion barrier comprising silicon nitride upon a (100) silicon substrate oriented 3 degrees off axis containing partially processed electronic devices having a top dielectric layer comprising a reflowable glass which comprises the steps of (a) cleaning the substrate by conventional techniques and depositing a thin film of silicon dioxide upon said to dielectric layer, (b) disposing the cleansed substrate in a glow discharge plasma chamber having an rf-powered source, (c) subjecting the substrate to a gaseous mixture comprising nitrogen and silane wherein the ratio of nitrogen to silane is less than 400:1, the substrate being maintained at a temperature within the range of 250 to 460 degrees Centigrade, so resulting in the deposition of a silicon nitride film on said substrate, and (d) depositing gallium arsenide by molecular beam epitaxial growth on said silicon nitride film.
Claim 4
Dependent Claim
143 words
Method for the preparation of a gallium diffusion barrier comprising silicon nitride upon a (100) silicon substrate oriented 3 degrees off axis containing partially processed electronic devices having a top dielectric layer comprising a reflowable glass which comprises the steps of (a) cleaning the substrate by conventional techniques and depositing a thin film of silicon dioxide upon said to dielectric layer, (b) disposing the cleansed substrate in a glow discharge plasma chamber having an rf-powered source, (c) subjecting the substrate to a gaseous mixture comprising nitrogen and silane wherein the ratio of nitrogen to silane is less than 400:1, the substrate being maintained at a temperature within the range of 250 to 460 degrees Centigrade, so resulting in the deposition of a silicon nitride film on said substrate, and (d) depositing gallium arsenide by molecular beam epitaxial growth on said silicon nitride film.
Claim 5
Dependent Claim
13 words
Method in accordance with claim 2 wherein the rf frequency is 13.56 MHz.
Claim 6
Dependent Claim
31 words
Method in accordance with claim 2 wherein the nitrogen gas flow is in the range of 100 to 400 sccm and the silane gas flow varies from 0.2 to 2.0 sccm.
Claim 7
Dependent Claim
16 words
Method in accordance with claim 2 wherein the substrate temperature is maintained at 350 degrees Centigrade.
Claim 8
Dependent Claim
17 words
Method in accordance with claim 2 wherein the nitrogen to silane ratio ranges from 53:1 to 300:1.
Claim 9
Dependent Claim
26 words
Method in accordance with claim 2 wherein the substrate was cleansed by immersion in an aqueous solution of sulfuric peroxide followed by a distilled water rinse.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |