US4210470A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial tunnels from intersecting growth planes
Assignee: International Business Machines Corp
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Filing: 1979-06-13
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Granted: 1980-07-01
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Expires: 1999-06-13
Abstract
Abstract Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.
Inventors
- 👤 John C. Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; G; G01; G01D; G01D15/00; G01D15/16; G01D15/18; H10D; H10D62/00; H10D62/10; H10D62/117; H10D62/124; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/278; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3424; H10P14/3431
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
69 words
A crystalline structure comprising a substrate and a body of a crystal, said substrate having a crystallographically oriented surface that has two preferential growth planes that intersect said surface and that intersect each other; a shape defining crystallographic growth inhibiting design on the surface of said substrate; and a grown monocrystalline body epitaxial with said substrate enclosing a void governed at said surface by the shape of said design.
Claim 2
Dependent Claim
69 words
A crystalline structure comprising a substrate and a body of a crystal, said substrate having a crystallographically oriented surface that has two preferential growth planes that intersect said surface and that intersect each other; a shape defining crystallographic growth inhibiting design on the surface of said substrate; and a grown monocrystalline body epitaxial with said substrate enclosing a void governed at said surface by the shape of said design.
Claim 3
Dependent Claim
11 words
The structure of claim 1 wherein said body is of GaAs.
Claim 4
Dependent Claim
11 words
The structure of claim 1 wherein said body is of GaP.
Claim 5
Dependent Claim
10 words
The structure of claim 1 wherein said body is ZnSe.
Claim 6
Dependent Claim
11 words
The structure of claim 1 wherein said body is of silicon.
Claim 7
Dependent Claim
15 words
The structure of claim 1 wherein said substrate surface orientation is the [100] crystallographic plane.
Claim 8
Dependent Claim
17 words
The structure of claim 1 wherein said grown material contains a p-n junction that intersects said void.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-01 | 1983-12-31 | 1984-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-01 | 1987-12-31 | 1988-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-01 | 1991-12-31 | 1992-07-01 | $7700.00 | Window Closed / Lapsed |