US4645683A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1985-10-04
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Granted: 1987-02-24
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Expires: 2005-10-04
Abstract
Abstract A method of manufacturing a semiconductor device is provided in which a surface of a substrate containing gallium and arsenic is treated in a first plasma containing hydrogen, and then, is coated with a layer of silicon nitride in a second plasma containing silicon and nitrogen. According to the invention, arsenic is added to the first plasma in the form of arsine. Further, the substrate is heated to a temperature below 450° C. during such treatment. After this treatment, but before the coating, the substrate is superficially converted into a surface layer of gallium and arsenic nitrides in a third plasma containing nitrogen. In this way, an almost ideal passivation of the surface of a gallium and arsenic containing substrate can be obtained.
Inventors
- 👤 Serge Gourrier
- 👤 Jean-Bernard Theeten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6512; H10P14/6514; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10P95/90; H10P95/904
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method of manufacturing a semiconductor device in which method a surface of a gallium and arsenic containing substrate is treated in a first plasma containing hydrogen and then is coated with a layer of silicon nitride in a second plasma containing silicon and nitrogen, characterized in that, (a) arsenic is added to the first plasma, (b) during the treatment in the first plasma the substrate is heated at a temperature below 450° C. and (c) after this treatment but before the coating with the layer of silicon nitride the substrate is superficially converted into a surface layer of gallium- and arsenic nitrides in a third plasma containing nitrogen.
Claim 2
Independent Claim
109 words
A method of manufacturing a semiconductor device in which method a surface of a gallium and arsenic containing substrate is treated in a first plasma containing hydrogen and then is coated with a layer of silicon nitride in a second plasma containing silicon and nitrogen, characterized in that, (a) arsenic is added to the first plasma, (b) during the treatment in the first plasma the substrate is heated at a temperature below 450° C. and (c) after this treatment but before the coating with the layer of silicon nitride the substrate is superficially converted into a surface layer of gallium- and arsenic nitrides in a third plasma containing nitrogen.
Claim 3
Dependent Claim
15 words
Method as claimed in claim 1, characterized in that the substrate consists of gallium arsenide.
Claim 4
Dependent Claim
48 words
Method as claimed in claim 1 or 2, characterized in that arsenic is added to the first plasma in the form of arsine (AsH 3 ) in a quantity of 1% by volume at most and that the substrate is heated at a temperature of about 370° C.
Claim 5
Dependent Claim
26 words
Method as claimed in claim 3, characterized in that the surface layer of gallium- and arsenic nitrides is obtained over a thickness of about 2 nm.
Claim 6
Dependent Claim
27 words
Method as claimed in claim 4, characterized in that the second plasma is excited in a gas containing silane and nitrogen (SiH 4 and N 2 ).
Claim 7
Dependent Claim
21 words
Method as claimed in claim 5, characterized in that the first, second and third plasma are excited in the same space.
Claim 8
Dependent Claim
21 words
Method as claimed in claim 4, characterized in that the first, second and third plasma are excited in the same space.
Claim 9
Dependent Claim
21 words
Method as claimed in claim 3, characterized in that the first, second and third plasma are excited in the same space.
Claim 10
Dependent Claim
27 words
Method as claimed in claim 3, characterized in that the second plasma is excited in a gas containing silane (SiH 4 ) and nitrogen (N 2 ).
Claim 11
Dependent Claim
28 words
Method as claimed in claim 1 or 2, characterized in that the surface layer of gallium and arsenic nitrides is obtained over a thickness of about 2 nm.
Claim 12
Dependent Claim
29 words
Method as claimed in claim 1 or 2, characterized in that the second plasma is excited in a gas containing silane (SiH 4 ) and nitrogen (N 2 ).
Claim 13
Dependent Claim
23 words
Method as claimed in claim 1 or 2, characterized in that the first, second and third plasma are excited in the same space.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-23 | 1990-08-25 | 1991-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-23 | 1994-08-25 | 1995-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-23 | 1998-08-25 | 1999-02-24 | $7700.00 | Window Closed / Lapsed |