US4436770A
Expired / Lapsed
US
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Oxynitride film and its manufacturing method
Assignee: Budda Hajia Handotai Kenkyu Shinkokai
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Filing: 1982-02-24
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Granted: 1984-03-13
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Expires: 2002-02-24
Abstract
Abstract The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.
Inventors
- 👤 Jun-ichi Nishizawa
- 👤 Ikuo Shiota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0676; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/00; H10D64/01; H10D64/013; H10D64/01358; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P14/69391; H10P14/69397; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6334; H10P14/6336; Y; Y10; Y10S; Y10S438/00; Y10S438/958; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
95 words
A method of manufacturing a film substantially formed of oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, the oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: adding a controlled amount of water to a predetermined amount of halide of said one substance; subjecting the water-added halide to ammonia treatment to form a supply source; transporting said supply source onto a heated substrate by a carrier gas and forming said film on said substrate by reaction of thermal decomposition of said supply source thereon.
Claim 2
Independent Claim
95 words
A method of manufacturing a film substantially formed of oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, the oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: adding a controlled amount of water to a predetermined amount of halide of said one substance; subjecting the water-added halide to ammonia treatment to form a supply source; transporting said supply source onto a heated substrate by a carrier gas and forming said film on said substrate by reaction of thermal decomposition of said supply source thereon.
Claim 3
Independent Claim
96 words
A method of manufacturing a film substantially formed of oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, the oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: treating a predetermined amount of a halide containing said one substance in an ammonia gas to form a supply source, transporting said supply source by a carrier gas containing a controlled amount of an oxidizing gas to vary oxygen-to-nitrogen ratio in said film, depositing said film through reaction of said supply source and said gas onto a substrate.
Claim 4
Independent Claim
96 words
A method of manufacturing a film substantially formed of oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, the oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: treating a predetermined amount of a halide containing said one substance in an ammonia gas to form a supply source, transporting said supply source by a carrier gas containing a controlled amount of an oxidizing gas to vary oxygen-to-nitrogen ratio in said film, depositing said film through reaction of said supply source and said gas onto a substrate.
Claim 5
Dependent Claim
28 words
A method according to claim 2, in which: said varying of oxygen-to-nitrogen ratio is carried out by varying the distance between the said supply source and said substrate.
Claim 6
Dependent Claim
24 words
A method according to claim 2, in which: said varying of oxygen-to-nitrogen ratio is carried out by varying the temperature of the supply source.
Claim 7
Dependent Claim
25 words
A method according to claim 2, in which: said varying of oxygen-to-nitrogen ratio is carried out by varying the flow rate of said carrier gas.
Claim 8
Independent Claim
98 words
A method of manufacturing a film formed substantially of an oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, said oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: charging a nitride-donating source and also an oxide-donating source to a vacuum chamber; evacuating said vacuum chamber to a predetermined pressure; and evaporating said nitride and oxide-donating sources onto a main surface of a substrate, while controlling the arrival rates of said nitride and said oxide independently thereof so as to obtain said oxygen-to-nitrogen ratio in the deposited film.
Claim 9
Independent Claim
98 words
A method of manufacturing a film formed substantially of an oxynitride of one substance selected from the group consisting of gallium, aluminum and their mixture, said oxynitride having an oxygen-to-nitrogen ratio of at least 0.15, comprising the steps of: charging a nitride-donating source and also an oxide-donating source to a vacuum chamber; evacuating said vacuum chamber to a predetermined pressure; and evaporating said nitride and oxide-donating sources onto a main surface of a substrate, while controlling the arrival rates of said nitride and said oxide independently thereof so as to obtain said oxygen-to-nitrogen ratio in the deposited film.
Claim 10
Independent Claim
133 words
A method of manufacturing an oxynitride film by relying on a film-forming reaction according to a reactive sputtering, comprising the steps of: evacuating a reaction chamber to a predetermined. pressure; introducing into the resulting chamber at least a nitrogen-containing gas selected from a nitrogen gas and an ammonia gas and also an oxidizing gas selected from an oxygen gas, a nitrogen oxide gas and water vapor; mixing them in said chamber; energizing said mixed gases into an excited state; sputtering a target formed of a substance selected from the group consisting of gallium, aluminum and their mixture, said target being located on one of two electrodes; depositing said film onto a substrate, wherein oxygen-to-nitrogen ratio in said film is varied by varying the mixing ratio of a nitrogen-containing gas to an oxygen-containing gas.
Claim 11
Independent Claim
133 words
A method of manufacturing an oxynitride film by relying on a film-forming reaction according to a reactive sputtering, comprising the steps of: evacuating a reaction chamber to a predetermined. pressure; introducing into the resulting chamber at least a nitrogen-containing gas selected from a nitrogen gas and an ammonia gas and also an oxidizing gas selected from an oxygen gas, a nitrogen oxide gas and water vapor; mixing them in said chamber; energizing said mixed gases into an excited state; sputtering a target formed of a substance selected from the group consisting of gallium, aluminum and their mixture, said target being located on one of two electrodes; depositing said film onto a substrate, wherein oxygen-to-nitrogen ratio in said film is varied by varying the mixing ratio of a nitrogen-containing gas to an oxygen-containing gas.
Claim 12
Independent Claim
46 words
A method of increasing the O/N ratio of an existing oxynitride film by subjecting said oxynitride film with a smaller O/N ratio to heat treatment in an atmosphere comprising at least an ammonia gas containing an oxidizing gas selected from oxygen, water vapor and nitrogen oxide.
Claim 13
Independent Claim
46 words
A method of increasing the O/N ratio of an existing oxynitride film by subjecting said oxynitride film with a smaller O/N ratio to heat treatment in an atmosphere comprising at least an ammonia gas containing an oxidizing gas selected from oxygen, water vapor and nitrogen oxide.
Claim 14
Independent Claim
38 words
A method of increasing the O/N ratio of an existing oxynitride film by subjecting the oxynitride film with a smaller O/N ratio to heat treatment in an atmosphere comprising at least a nitrogen gas containing a nitrogen oxide.
Claim 15
Independent Claim
38 words
A method of increasing the O/N ratio of an existing oxynitride film by subjecting the oxynitride film with a smaller O/N ratio to heat treatment in an atmosphere comprising at least a nitrogen gas containing a nitrogen oxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |