Method of producing coatings to be used as masking, passivation, contacting and doping layers on semiconductor surfaces

Claim 2

A method as claimed in claim 1, wherein: the concentration of the respective hydrides in the reaction chamber varies between 0.1 to 0.5 percent by volume.

Claim 3

A method as claimed in claim 1, wherein the respective hydrides in the reaction chamber amounts to a maximum of 10 percent by volume.

Claim 4

A method as claimed in claim 1 wherein: the mixture of inert carrier gas and hydride gas has a mixing ratio of 200 : 1.

Claim 5

A method as claimed in claim 1, wherein: the inert carrier gas consists of a gas selected from the group consisting of nitrogen and the noble gases.

Claim 6

A method as claimed in claim 1, wherein: the mixture comprising the carrier gas and the respective hydride gas flows at the rate of 2 to 3 liters/minute.

Claim 7

A method as claimed in claim 1, wherein: the mixture of carrier gas and respective hydride gas is directed to the substrate surface by nozzle means adapted to move in a transverse and longitudinal direction with respect to the substrate.

Claim 8

In a method of coating a solid layer of inorganic materal on the surface of a heated semiconductor crystal wafer which is subjected, in a reaction vessel, to the action of a reaction gas that deposits the respective coating material at the temperature of the semiconductor wafer on a heated substrate, the reaction gas containing two active components, the coating material tending to deposit at the deposition temperature only in the presence of both active components of the reaction gas, and fresh reaction gas being introduced into the reaction vessel containing the semiconductor wafers that are to be coated and spent reaction gas being discharged from the reaction vessel continually during the deposition process, the improvement therein which comprises initially producing in a flow-through operation an atmosphere containing only one active component of the reaction gas in the reaction vessel containing the heated semiconductor wafers, and only thereafter supplying the other component in the form of a gas stream from a nozzle displaceable over and directed toward the heated semiconductor wafers, the gas stream being in greatly diluted state and having a concentration of at most 10 Vol. percent of the coating material to be deposited, so as to restrict the formation of the coating material to the surface of the heated semiconductor wafers.

Claim 9

Method according to claim 9 wherein the solid layer of inorganic material is pure metal, and which comprises reducing to the metal per se a gaseous halogenide of the metal at the surface of the heated semiconductor wafers, by heating the semiconductor wafers in a hydrogen atmospheRe and passing a stream of the gaseous halogenide diluted with an inert gas over the surface of the semiconductor wafers.