Chemical vapor deposition of dielectric films containing Al, N, and Si

Claim 1

A method for depositing a layer containing Al, N, and Si on a substrate by chemical vapor deposition which comprises: A. providing in a reaction zone, a substrate to be coated, a carrier gas, and a reactive gaseous mixture of: 1. nitrogen compound capable of providing reactive gaseous nitrogen at the conditions in said reaction zone; 2. aluminum compound capable of providing reactive gaseous aluminum at the conditions in said reaction zone; and 3. a silicon compound capable of providing reactive gaseous silicon at the conditions in said reaction zone; B. heating the substrate in said reaction zone to a temperature in the range of about 500° to about 1300° C to cause formation on said substrate of the layer containing Al, N, and Si wherein the atomic percent of N in said layer is from about 50 to about 57%, the atomic percent of Al is from about 30 to about 5%, and the atomic percent of Si is from about 20 to about 40%, said atomic percents being based upon the total atoms of Al, N, and Si in the layer.

Claim 2

A method for depositing a layer containing Al, N, and Si on a substrate by chemical vapor deposition which comprises: A. providing in a reaction zone, a substrate to be coated, a carrier gas, and a reactive gaseous mixture of: 1. nitrogen compound capable of providing reactive gaseous nitrogen at the conditions in said reaction zone; 2. aluminum compound capable of providing reactive gaseous aluminum at the conditions in said reaction zone; and 3. a silicon compound capable of providing reactive gaseous silicon at the conditions in said reaction zone; B. heating the substrate in said reaction zone to a temperature in the range of about 500° to about 1300° C to cause formation on said substrate of the layer containing Al, N, and Si wherein the atomic percent of N in said layer is from about 50 to about 57%, the atomic percent of Al is from about 30 to about 5%, and the atomic percent of Si is from about 20 to about 40%, said atomic percents being based upon the total atoms of Al, N, and Si in the layer.

Claim 20

A method for fabricating a semiconductor device which comprises: A. providing a semiconductor substrate of a first conductive type containing an active impurity of a first type in a reaction zone; a carrier gas, and a reactive gaseous mixture of: 1. a nitrogen compound capable of providing reactive gaseous nitrogen at the conditions in said reaction zone; 2. aluminum compound capable of providing reactive gaseous aluminum at the conditions in said reaction zone; and 3. a silicon compound capable of providing reactive gaseous silicon at the conditions in said reaction zone; B. heating the substrate in said reaction zone to a temperature in the range of about 500° to about 1300° C to thereby cause formation on the substrate of a layer containing Al, N, and Si wherein the atomic percent of N in the layer is from about 50 to about 57%, the atomic percent of Al is from about 30 to about 5%, and the atomic percent of Si is from about 20 to about 40%, the atomic percents being based upon the total atoms of N, Al, and Si in the layer; C. incorporating an active impurity of a second type into preselected regions of said substrate; D. removing material at preselected locations of the layer to provide for ohmic electrical contact between preselected regions of the underlying semiconductor substrate and subsequently apply electrical contacts; and E. then depositing a plurality of electrical contacts at preselected locations wherein a predetermined number of the contacts are in ohmic electrical contact with the preselected regions of the underlying semiconductor substrate so as to provide the semiconductor device.

Claim 21

A method for fabricating a semiconductor device which comprises: A. providing a semiconductor substrate of a first conductive type containing an active impurity of a first type in a reaction zone; a carrier gas, and a reactive gaseous mixture of: 1. a nitrogen compound capable of providing reactive gaseous nitrogen at the conditions in said reaction zone; 2. aluminum compound capable of providing reactive gaseous aluminum at the conditions in said reaction zone; and 3. a silicon compound capable of providing reactive gaseous silicon at the conditions in said reaction zone; B. heating the substrate in said reaction zone to a temperature in the range of about 500° to about 1300° C to thereby cause formation on the substrate of a layer containing Al, N, and Si wherein the atomic percent of N in the layer is from about 50 to about 57%, the atomic percent of Al is from about 30 to about 5%, and the atomic percent of Si is from about 20 to about 40%, the atomic percents being based upon the total atoms of N, Al, and Si in the layer; C. incorporating an active impurity of a second type into preselected regions of said substrate; D. removing material at preselected locations of the layer to provide for ohmic electrical contact between preselected regions of the underlying semiconductor substrate and subsequently apply electrical contacts; and E. then depositing a plurality of electrical contacts at preselected locations wherein a predetermined number of the contacts are in ohmic electrical contact with the preselected regions of the underlying semiconductor substrate so as to provide the semiconductor device.