Patent US7128582B2 successfully refreshed from Google Patents.
US5457345A
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Metallization composite having nickle intermediate/interface
Assignee: International Business Machines Corp
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Filing: 1994-01-14
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Granted: 1995-10-10
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Expires: 2014-01-14
Abstract
Abstract A metallization composite comprises a refractory metal, nickel, and copper. The refractory metal is preferably titanium (Ti), but other suitable refractory metals such as zirconium and hafnium can also be utilized. An additional optional layer of gold can overlie the copper. The metallization composite is used to connect a solder contact to a semiconductor substrate.
Inventors
- 👤 Herbert C. Cook
- 👤 Paul A. Farrar, Sr.
- 👤 Robert M. Geffken
- 👤 William T. Motsiff
- 👤 Adolf E. Wirsing
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:10
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W72/20; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
67 words
A metallization composite for connecting a solder contact to a semiconductor substrate comprising: a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer.
Claim 2
Dependent Claim
67 words
A metallization composite for connecting a solder contact to a semiconductor substrate comprising: a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer.
Claim 3
Dependent Claim
24 words
The metallization composite of claim 1 further comprising a layer of gold having a thickness of at least 700 Angstroms overlying said copper layer.
Claim 4
Dependent Claim
25 words
The metallization composite of claim 1 further comprising a refractory metal/nickel intermetallic layer between said layer of a refractory metal and said layer of nickel.
Claim 5
Dependent Claim
22 words
The metallization composite of claim 1 further comprising a nickel/copper intermetallic layer between said layer of nickel and said layer of copper.
Claim 6
Dependent Claim
12 words
The metallization composite of claim 1 wherein said refractory metal comprises titanium.
Claim 7
Dependent Claim
87 words
A semiconductor device comprising: a semiconductor substrate having a top surface thereof; and a metallization composite overlying said top surface; wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said top surface, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel.
Claim 8
Dependent Claim
87 words
A semiconductor device comprising: a semiconductor substrate having a top surface thereof; and a metallization composite overlying said top surface; wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said top surface, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel.
Claim 9
Dependent Claim
146 words
A semiconductor device comprising: a semiconductor substrate having a top surface thereof; a metal layer overlying said top surface of said semiconductor substrate; an insulation layer overlying said metal layer, said insulation layer having an opening therein to said metal layer; a metallization composite overlying said insulation layer and occupying said opening in said insulation layer, said metallization composite thereby contacting said metal layer; and a lead-tin solder layer overlying said metallization composite; wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said insulation layer, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel and underlying said lead-tin solder layer.
Claim 10
Dependent Claim
146 words
A semiconductor device comprising: a semiconductor substrate having a top surface thereof; a metal layer overlying said top surface of said semiconductor substrate; an insulation layer overlying said metal layer, said insulation layer having an opening therein to said metal layer; a metallization composite overlying said insulation layer and occupying said opening in said insulation layer, said metallization composite thereby contacting said metal layer; and a lead-tin solder layer overlying said metallization composite; wherein said metallization composite comprises a layer of a refractory metal having a thickness of 300-1500 Angstroms overlying said insulation layer, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said layer of a refractory metal; and a layer of copper having a thickness of 2000-20000 Angstroms overlying said layer of nickel and underlying said lead-tin solder layer.
Claim 11
Dependent Claim
14 words
The semiconductor device of claim 7 wherein said semiconductor substrate comprises a silicon wafer.
Claim 12
Dependent Claim
12 words
The semiconductor device of claim 7 wherein said metal layer comprises aluminum.
Claim 13
Dependent Claim
23 words
The semiconductor device of claim 7 wherein said insulation layer is selected from the group consisting of silicon nitride, silicon dioxide, and polyimide.
Claim 14
Dependent Claim
83 words
A metallization composite for connecting a solder contact to a semiconductor substrate comprising: a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer; a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer; and a layer of gold having a thickness of at least 700 Angstroms overlying said copper layer.
Claim 15
Dependent Claim
83 words
A metallization composite for connecting a solder contact to a semiconductor substrate comprising: a layer of refractory metal having a thickness of 300-1500 Angstroms, said refractory metal selected from the group consisting of titanium, hafnium, and zirconium; a layer of nickel having a thickness of 400-1000 Angstroms overlying said refractory metal layer; a layer of copper having a thickness of 2000-20000 Angstroms overlying said nickel layer; and a layer of gold having a thickness of at least 700 Angstroms overlying said copper layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-10-09 | 1999-04-10 | 1999-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-09 | 2003-04-10 | 2003-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-09 | 2007-04-10 | 2007-10-10 | $7700.00 | Window Closed / Lapsed |