Manufacture of electrode in semiconductor device

Abstract

Abstract PURPOSE:To improve productivity by holding density of a copper ion in electrolyte for nickel plating within a predetermined range wherein proper treatment is applied to a formation section forming a plating layer and mechanical, thermal and chemical characteristics of electrode sections make superior ones. CONSTITUTION:Electrolyte 2 is accommodated in a tank for electrolyte plating and electrodes 5 are arranged in the solution 2. The positive electrode of a power source 4 is connected to the electrodes 5 through insulators 6. An insulating holder 7 and a semiconductor substrate 9 connected by a reverse L-shaped conductor 8 are also arranged in the solution 2 and the negative electrode of the power source 4 is connected to the substrate 9 through conductors 8, 10. Insulating films 11 are selectively formed on the surface of the substrate 9. Furthermore, a copper electrode 12 and a negative electrode 13 made by copper and platinum or the like are arranged in the solution 2. And the positive electrode of a DC power source 15 is connected to the copper electrode 12 through a switch 14. Mechanical, thermal and chemical characteristics of the electrode sections will be made superior ones by connecting the negative electrode of the power source 15 to the negative electrode 13 and productivity will be improved.

Inventors

• 👤 Shigeo Hachiman
• 👤 Masafumi Miyagawa
• 👤 Kenichi Goto
• 👤 Hikaru Endou
• 👤 Naotake Hachiman

Bibliographic Details