US5453639A
Expired / Lapsed
US
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Planarized semiconductor structure using subminimum features
Assignee: International Business Machines Corp
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Filing: 1993-10-27
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Granted: 1995-09-26
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Expires: 2013-10-27
Abstract
Abstract Improved, planarized semiconductor structures are described. They are prepared by a method which involves the creation of a series of subminimum (i.e., 50 to 500 Angstroms thick) silicon pillars extending vertically upward from the base of a wide trench, and oxidizing the pillars. When the substrate is covered with a conformal CVD oxide, the pillars prevent the formation of a single deep depression above the trench.
Inventors
- 👤 John E. Cronin
- 👤 Howard S. Landis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:17
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P95/00; H10P95/06; H10P95/062; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
96 words
A planarized semiconductor structure comprising: a semiconductor structure having a recessed area therein and having a surface adjacent said recessed area; a plurality of dispersed, oxidized pillars situated within said recessed area; and a planarized layer of fill comprising a chemical vapor-deposited oxide material, said layer of fill deposited over said pillars and said recessed area, wherein a second surface of said planarized layer of fill is substantially planar with said surface of said semiconductor structure, and wherein the oxidized pillars have a crystal structure which is different from that of the planarized layer of fill.
Claim 2
Dependent Claim
96 words
A planarized semiconductor structure comprising: a semiconductor structure having a recessed area therein and having a surface adjacent said recessed area; a plurality of dispersed, oxidized pillars situated within said recessed area; and a planarized layer of fill comprising a chemical vapor-deposited oxide material, said layer of fill deposited over said pillars and said recessed area, wherein a second surface of said planarized layer of fill is substantially planar with said surface of said semiconductor structure, and wherein the oxidized pillars have a crystal structure which is different from that of the planarized layer of fill.
Claim 3
Dependent Claim
23 words
The planarized semiconductor structure of claim 1 wherein said pillars comprise a thermal oxide and said fill comprises a chemical vapor deposited oxide.
Claim 4
Dependent Claim
21 words
The planarized semiconductor structure of claim 1 wherein the density of said pillars comprises one to ten pillars per square micron.
Claim 5
Dependent Claim
17 words
The planarized semiconductor structure of claim 1 wherein said pillars further comprise a layer of oxide thereon.
Claim 6
Dependent Claim
14 words
The planarized semiconductor structure of claim 1 wherein said recessed area comprises a trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-25 | 1999-03-27 | 1999-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-25 | 2003-03-27 | 2003-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-25 | 2007-03-27 | 2007-09-26 | $7700.00 | Window Closed / Lapsed |