Method for producing a silicon technology transistor on a nonconductor

Claim 1

Method for producing an MIS transistor comprising a channel, a source and a drain on both sides of the channel and a gate on the channel and separated from the source and the drain, said method comprising the following stages: a) forming a thin film of silicon on a nonconductor, b) forming on the thin silicon film a mask including an opening at the location provided for the channel of the transistor, c) forming a local thick oxidation film by oxidizing the unmasked silicon so as to locally thin the silicon and to form a thinned silicon zone in said silicon film, d) removing the mask, e) effecting ion drain and source implantation in the silicon, the oxidation film being used as a self-aligning mask to mask this implantation, f) removing the oxidation film, g) forming a thin gate nonconductor overlapping the source and the drain, and h) forming the gate on the gate nonconductor.