Thin-film transistor

Abstract

Abstract PURPOSE:To facilitate the formation of a contact hole and to increase the ON current through lowering the threshold voltage by a method wherein the thickness of a channel region located between a source region and drain region is locally reduced. CONSTITUTION:An island is formed of non-single crystal silicon layer 9 on an insulating substrate 1 and, on the layer 9, a silicon oxide layer 11 and then a silicon nitride layer 8 is formed. A gate insulating film 4 is formed at the middle of the lamination. During the process of the formation of the gate insulating film 4, with the silicon nitride layer 8 serving as a mask, the channel region of the non-single crystal silicon layer 9 is subjected to selective, thermal oxidation, for rendering source-drain regions 2 thick and the channel region thin. With the device being designed as such, the process may be accomplished with ease for the formation of a contact hole. With the threshold voltage lowered in this design, a larger ON current is available.

Inventors

• 👤 Yoshifumi Tsunekawa
• 👤 吉文 恒川
• 👤 Hiroyuki Oshima
• 👤 弘之 大島

Bibliographic Details