US5432117A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor device
Assignee: Rohm Co Ltd
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Filing: 1994-05-23
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Granted: 1995-07-11
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Expires: 2014-05-23
Abstract
Abstract An insulating film and a silicon nitride film are formed on a semiconductor substrate. A resist film is patterned on the silicon nitride film. Thereafter, using the patterned resist film as a mask, the silicon nitride film is removed in such a manner that the film thickness is the maximum at its center portion and becomes gradually small downwardly in the neighborhood of the ends of the resist film pattern. The silicon nitride film which is thick at its center portion is adopted as a mask for selective oxidation.
Inventors
- 👤 Kouji Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 02:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
166 words
A method of producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a silicon nitride film on said insulating film; forming and patterning a resist film on said silicon nitride film; removing said silicon nitride film using said patterned resist film as a mask so that a thickness of a remaining portion of said silicon nitride film becomes small gradually from a first portion under a center of said patterned resist film to a second portion near an end of said patterned resist film; and selectively oxidizing said substrate using as a mask said silicon nitride film remaining on said semiconductor substrate, wherein said step of removing said silicon nitride film comprises an isotropic etching and an anisotropic etching, said anisotropic etching being performed after said isotropic etching, each of said etching steps using the patterned resist film as a mask so that said silicon nitride film has a slope from said first portion to said second portion.
Claim 2
Independent Claim
166 words
A method of producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a silicon nitride film on said insulating film; forming and patterning a resist film on said silicon nitride film; removing said silicon nitride film using said patterned resist film as a mask so that a thickness of a remaining portion of said silicon nitride film becomes small gradually from a first portion under a center of said patterned resist film to a second portion near an end of said patterned resist film; and selectively oxidizing said substrate using as a mask said silicon nitride film remaining on said semiconductor substrate, wherein said step of removing said silicon nitride film comprises an isotropic etching and an anisotropic etching, said anisotropic etching being performed after said isotropic etching, each of said etching steps using the patterned resist film as a mask so that said silicon nitride film has a slope from said first portion to said second portion.
Claim 3
Independent Claim
128 words
A method of producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a silicon nitride film on said insulating film; forming and patterning a resist film on said silicon nitride film; removing said silicon nitride film using said patterned resist film as a mask so that a thickness of a remaining portion of said silicon nitride film becomes small gradually from a first portion under a center of said patterned resist film to a second portion near an end of said patterned resist film; and selectively oxidizing said substrate using as a mask said silicon nitride film remaining on said semiconductor substrate, wherein after formation of said silicon nitride film, a surface of said silicon nitride film is made hydrophilic.
Claim 4
Independent Claim
128 words
A method of producing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a silicon nitride film on said insulating film; forming and patterning a resist film on said silicon nitride film; removing said silicon nitride film using said patterned resist film as a mask so that a thickness of a remaining portion of said silicon nitride film becomes small gradually from a first portion under a center of said patterned resist film to a second portion near an end of said patterned resist film; and selectively oxidizing said substrate using as a mask said silicon nitride film remaining on said semiconductor substrate, wherein after formation of said silicon nitride film, a surface of said silicon nitride film is made hydrophilic.
Claim 5
Dependent Claim
23 words
A method of producing a semiconductor device according to claim 2, wherein said step of removing said silicon nitride film comprises isotropic etching.
Claim 6
Dependent Claim
40 words
A method of producing a semiconductor device according to claim 2, said step of patterning said resist film comprises a photo-etching to form a trapezoid-shaped resist pattern, and said step of removing said silicon nitride film comprises an anisotropic etching.
Claim 7
Dependent Claim
52 words
A method of producing a semiconductor device according to claim 2, wherein said step of removing said silicon nitride film comprises a plurality of etching steps each using said patterned resist film as a mask so that said silicon nitride film has a slope from said first portion to said second portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-10 | 1999-01-09 | 1999-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-10 | 2003-01-09 | 2003-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-10 | 2007-01-09 | 2007-07-11 | $7700.00 | Window Closed / Lapsed |