US5428569A
Expired / Lapsed
US
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Non-volatile semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1993-03-29
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Granted: 1995-06-27
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Expires: 2013-03-29
Abstract
Abstract A non-volatile semiconductor memory device comprises: a plurality of memory cells for electrically rewriting data; a programming and erasing section for executing data writing programs and data erasing operation for the memory cells; a verifying section for discriminating whether a data is written in or erased from one of the memory cells properly whenever data are written to or erased from the memory cells; and an automatic control section for enabling the programming and erasing section to execute the data writing program and erasing operation again whenever the verifying section discriminates that data is not properly written to or erased from one of the memory cells, the data writing program or erasing operation being executed repeatedly by the number of times less than a user-defined maximum program execution or erasing operation number applied externally from the outside of the memory device. Further, the number of data writing and erasing operations can be outputted to the outside of the chip. Therefore, it is possible to optimize the limit of the data writing operation according to the chip samples and to detect the deterioration status of he chip externally from the chip. The reliability of a system using the memory devices can be improved, and further the chip exchange timing can be indicated to the user.
Inventors
- 👤 Hideo Kato
- 👤 Hiroto Nakai
- 👤 Masamichi Asano
- 👤 Kaoru Tokushige
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:20
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/12; G11C16/14; G11C16/16; G11C29/00; G11C29/04; G11C29/50; G11C29/52; G11C16/04
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
139 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said data writing program being executed repeatedly a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device; wherein said automatic control means is so configured as to rewrite and store the maximum program execution number applied externally.
Claim 2
Dependent Claim
139 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said data writing program being executed repeatedly a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device; wherein said automatic control means is so configured as to rewrite and store the maximum program execution number applied externally.
Claim 3
Dependent Claim
43 words
The device of claim 1, wherein said automatic control means is so configured as to count and store the number of programs executed by said programming means and further output the stored number of executed programs to the outside of the memory device.
Claim 4
Dependent Claim
54 words
The device of claim 2, wherein said automatic control means compares the number of programs executed by said programming means with the maximum program execution number applied from the outside of the memory device to decide whether the same program is to be executed again or not on the basis of the comparison result.
Claim 5
Dependent Claim
35 words
The device of claim 3, wherein said automatic control means inputs the maximum program execution number from the outside and outputs the number of executed programs to the outside in response to inputted commands, respectively.
Claim 6
Dependent Claim
15 words
The device of claim 4, wherein the data writing program is executed for each page.
Claim 7
Dependent Claim
27 words
The device of claim 5, wherein the data writing program is executed beginning from a memory cell corresponding to a write start head address of each page.
Claim 8
Dependent Claim
25 words
The device of claim 6, wherein a BUSY signal indicative of data write program execution is outputted when the data writing program is being executed.
Claim 9
Dependent Claim
157 words
A non-volatile semiconductor memory device comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said data writing program being executed repeatedly a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device; wherein said automatic control means is so configured as to count and store the number of programs executed by said programming means and further output the stored number of executed programs to the outside of the memory device.
Claim 10
Dependent Claim
157 words
A non-volatile semiconductor memory device comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said data writing program being executed repeatedly a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device; wherein said automatic control means is so configured as to count and store the number of programs executed by said programming means and further output the stored number of executed programs to the outside of the memory device.
Claim 11
Dependent Claim
54 words
The device of claim 8, wherein said automatic control means compares the number of programs executed by said programming means with the maximum program execution number applied from the outside of the memory device to decide whether the same program is to be executed again or not on the basis of the comparison result.
Claim 12
Dependent Claim
35 words
The device of claim 9, wherein said automatic control means inputs the maximum program execution number from the outside and outputs the number of executed programs to the outside in response to inputted commands, respectively.
Claim 13
Dependent Claim
15 words
The device of claim 10, wherein the data writing program is executed for each page.
Claim 14
Dependent Claim
27 words
The device of claim 11, wherein the data writing program is executed beginning from a memory cell corresponding to a write start head address of each page.
Claim 15
Dependent Claim
25 words
The device of claim 12, wherein a BUSY signal indicative of data write program execution is outputted when the data writing program is being executed.
Claim 16
Dependent Claim
133 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly said erasing means whenever data are erased in said memory cells, and automatic control means for enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said data erasing operation being executed repeatedly a number of times up to a user-defined maximum erasing operation number applied externally from outside of the memory device; wherein said automatic control means is so configured as to rewrite and store the maximum erasing operation number applied externally.
Claim 17
Dependent Claim
133 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly said erasing means whenever data are erased in said memory cells, and automatic control means for enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said data erasing operation being executed repeatedly a number of times up to a user-defined maximum erasing operation number applied externally from outside of the memory device; wherein said automatic control means is so configured as to rewrite and store the maximum erasing operation number applied externally.
Claim 18
Dependent Claim
45 words
The device of claim 14, wherein said automatic control means is so configured as to count and store the number of erasing operations executed by said erasing means and further output the stored number of executed erasing operations to the outside of the memory device.
Claim 19
Dependent Claim
56 words
The device of claim 15, wherein said automatic control means compares the number of erasing operations executed by said erasing means with the maximum erasing operation number applied from the outside of the memory device to decide whether the same erasing operation is to be executed again or not on the basis of the comparison result.
Claim 20
Dependent Claim
36 words
The device of claim 16, wherein said automatic control means inputs the maximum erasing operation number from the outside and outputs the number of executed erasing operations to the outside in response to inputted commands, respectively.
Claim 21
Dependent Claim
15 words
The device of claim 17, wherein the data erasing operation is executed for each page.
Claim 22
Dependent Claim
27 words
The device of claim 18, wherein the data erasing operation is executed beginning from a memory cell corresponding to a write start head address of each page.
Claim 23
Dependent Claim
24 words
The device of claim 19, wherein a BUSY signal indicative of data erasing operation is outputted when the data erasing operation is being executed.
Claim 24
Dependent Claim
154 words
A non-volatile semiconductor memory device comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly by said erasing means whenever data are erased in said memory cells; and automatic control means for enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said data erasing operation being executed repeatedly a number of times up to a user-defined maximum erasing operation number applied externally from outside of the memory device; wherein said automatic control means is so configured as to count and store the number of erasing operations executed by said erasing means and further output the stored number of executed erasing operations to the outside of the memory device.
Claim 25
Dependent Claim
154 words
A non-volatile semiconductor memory device comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly by said erasing means whenever data are erased in said memory cells; and automatic control means for enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said data erasing operation being executed repeatedly a number of times up to a user-defined maximum erasing operation number applied externally from outside of the memory device; wherein said automatic control means is so configured as to count and store the number of erasing operations executed by said erasing means and further output the stored number of executed erasing operations to the outside of the memory device.
Claim 26
Dependent Claim
56 words
The device of claim 21, wherein said automatic control means compares the number of erasing operations executed by said erasing means with the maximum erasing operation number applied from the outside of the memory device to decide whether the same erasing operation is to be executed again or not on the basis of the comparison result.
Claim 27
Dependent Claim
36 words
The device of claim 22, wherein said automatic control means inputs the maximum erasing operation number from the outside and outputs the number of executed erasing operations to the outside in response to inputted commands, respectively.
Claim 28
Dependent Claim
15 words
The device of claim 23, wherein the data erasing operation is executed for each page.
Claim 29
Dependent Claim
27 words
The device of claim 24, wherein the data erasing operation is executed beginning from a memory cell corresponding to a write start head address of each page.
Claim 30
Dependent Claim
24 words
The device of claim 25, wherein a BUSY signal indicative of data erasing operation is outputted when the data erasing operation is being executed.
Claim 31
Dependent Claim
141 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for automatically enabling said verifying means to execute discrimination and enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said automatic control means executing said data writing program repeatedly without receiving any command from outside of the memory device a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device.
Claim 32
Dependent Claim
141 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; programming means for executing data writing programs to write data to said memory cells; verifying means for discriminating whether or not data is written to one of said memory cells properly by said programming means whenever data are written in said memory cells; and automatic control means for automatically enabling said verifying means to execute discrimination and enabling said programming means to execute a data writing program again whenever said verifying means discriminates that a data is not written properly to one of said memory cells, said automatic control means executing said data writing program repeatedly without receiving any command from outside of the memory device a number of times up to a user-defined maximum program execution number applied externally from outside of the memory device.
Claim 33
Dependent Claim
25 words
The device of claim 27, wherein said automatic control means is so configured as to rewrite and store the maximum program execution number applied externally.
Claim 34
Dependent Claim
43 words
The device of claim 28, wherein said automatic control means is so configured as to count and store the number of programs executed by said programming means and further output the stored number of executed programs to the outside of the memory device.
Claim 35
Dependent Claim
54 words
The device of claim 29, wherein said automatic control means compares the number of programs executed by said programming means with the maximum program execution number applied from the outside of the memory device to decide whether or not the same program is to be executed again on the basis of the comparison result.
Claim 36
Dependent Claim
35 words
The device of claim 30, wherein said automatic control means inputs the maximum program execution number from the outside and outputs the number of executed programs to the outside in response to inputted commands, respectively.
Claim 37
Dependent Claim
43 words
The device of claim 27, wherein said automatic control means is so configured as to count and store the number of programs executed by said programming means and further output the stored number of executed programs to the outside of the memory device.
Claim 38
Dependent Claim
54 words
The device of claim 32, wherein said automatic control means compares the number of programs executed by said programming means with the maximum program execution number applied from the outside of the memory device to decide whether or not the same program is to be executed again on the basis of the comparison result.
Claim 39
Dependent Claim
35 words
The device of claim 33, wherein said automatic control means inputs the maximum program execution number from the outside and outputs the number of executed programs to the outside in response to inputted commands, respectively.
Claim 40
Dependent Claim
135 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly by said erasing means whenever data are erased in said memory cells; and automatic control means for automatically enabling said verifying means to execute discrimination and enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said automatic control means executing said data erasing operation repeatedly without receiving any command from outside of the memory device a number of times up to a user-defined maximum erasing operation number applied externally outside of the memory device.
Claim 41
Dependent Claim
135 words
A non-volatile semiconductor memory device, comprising: a plurality of memory cells for electrically rewriting data; erasing means for erasing data in said memory cells; verifying means for discriminating whether or not data is erased in one of said memory cells properly by said erasing means whenever data are erased in said memory cells; and automatic control means for automatically enabling said verifying means to execute discrimination and enabling said erasing means to execute the data erasing operation again whenever said verifying means discriminates that a data is not erased properly in one of said memory cells, said automatic control means executing said data erasing operation repeatedly without receiving any command from outside of the memory device a number of times up to a user-defined maximum erasing operation number applied externally outside of the memory device.
Claim 42
Dependent Claim
25 words
The device of claim 35, wherein said automatic control means is so configured as to rewrite and store the maximum erasing operation number applied externally.
Claim 43
Dependent Claim
45 words
The device of claim 36, wherein said automatic control means is so configured as to count and store the number of erasing operations executed by said erasing means and further output the stored number of executed erasing operations to the outside of the memory device.
Claim 44
Dependent Claim
55 words
The device of claim 37, wherein said automatic control means compares the number of erasing operations executed by said erasing means with the maximum erasing operation number applied from the outside of the memory device to decide whether or not the same erasing operation is to be executed again on the basis of the-comparison result.
Claim 45
Dependent Claim
36 words
The device of claim 38, wherein said automatic control means inputs the maximum erasing operation number from the outside and outputs the number of executed erasing operations to the outside in response to inputted commands, respectively.
Claim 46
Dependent Claim
45 words
The device of claim 35, wherein said automatic control means is so configured as to count and store the number of erasing operations executed by said erasing means and further output the stored number of executed erasing operations to the outside of the memory device.
Claim 47
Dependent Claim
56 words
The device of claim 40, wherein said automatic control means compares the number of erasing operations executed by said erasing means with the maximum erasing operation number applied from the outside of the memory device to decide whether or not the same erasing operation is to be executed again on the basis of the comparison result.
Claim 48
Dependent Claim
36 words
The device of claim 41, wherein said automatic control means inputs the maximum erasing operation number from the outside and outputs the number of executed erasing operations to the outside in response to inputted command, respectively.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-26 | 1998-12-26 | 1999-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-26 | 2002-12-26 | 2003-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-26 | 2006-12-26 | 2007-06-27 | $7700.00 | Window Closed / Lapsed |