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US4912677A Expired / Lapsed US ⏱️ 0.0 years remaining

Programmable logic device

Assignee: Fujitsu VLSI Ltd
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Filing: 1988-06-10
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Granted: 1990-03-27
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Expires: 2008-06-10
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Abstract

Abstract A programmable logic device includes an AND array; an OR array; a buffer circuit connected between the AND array and OR array; and a number of decoder arrangements operatively connected to the AND array and OR array. By constituting the buffer such that the AND array and OR array are electrically associated even in a write operation of data, namely, the buffer is brought to an enable state, a logic verify of the buffer becomes unnecessary and, accordingly, a verify/check of written data can be carried out both easily and efficiently.

Inventors

  • 👤 Kiyoshi Itano
  • 👤 Kohji Shimbayashi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 18:24
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/177; H03K19/17704; H03K19/17708

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 256 words
A programmable logic device, comprising: an AND array having a programmable memory cell provided at each intersection between a plurality of input term lines and a first plurality of product term lines; an OR array having a programmable memory cell provided at each intersection between a second plurality of product term lines of the same number as said first plurality of product term lines and a plurality of output term lines; a first decoder arrangement operatively connected to said AND array and selecting one of said input term lines in response to a first address signal when said AND array is selected; a second decoder arrangement operatively connected to said AND array and selecting one of said first product term lines in response to a second address signal when one of said AND array and said OR array is selected; a third decoder arrangement operatively connected to said OR array and selecting one of said output term lines in response to a third address signal when said OR array is selected; and a buffer circuit, operatively connected between said first plurality of product term lines and said second plurality of product term lines for converting a first voltage of a first product term line selected by said second decoder arrangement to a second voltage which is higher than said first voltage and applying said converted second voltage to a corresponding second product term line, wherein programming of a programmable memory cell in said OR array selected by said second and third decoder arrangements is carried out.
Claim 2
Dependent Claim 256 words
A programmable logic device, comprising: an AND array having a programmable memory cell provided at each intersection between a plurality of input term lines and a first plurality of product term lines; an OR array having a programmable memory cell provided at each intersection between a second plurality of product term lines of the same number as said first plurality of product term lines and a plurality of output term lines; a first decoder arrangement operatively connected to said AND array and selecting one of said input term lines in response to a first address signal when said AND array is selected; a second decoder arrangement operatively connected to said AND array and selecting one of said first product term lines in response to a second address signal when one of said AND array and said OR array is selected; a third decoder arrangement operatively connected to said OR array and selecting one of said output term lines in response to a third address signal when said OR array is selected; and a buffer circuit, operatively connected between said first plurality of product term lines and said second plurality of product term lines for converting a first voltage of a first product term line selected by said second decoder arrangement to a second voltage which is higher than said first voltage and applying said converted second voltage to a corresponding second product term line, wherein programming of a programmable memory cell in said OR array selected by said second and third decoder arrangements is carried out.
Claim 3
Dependent Claim 87 words
A device as set forth in claim 1, wherein said buffer circuit includes a first transistor connected to a first power supply line changeable between two voltage values and a second transistor connected between said first transistor and a second power supply line which is lower than said first power supply line, and in response to a signal level present at a first product term line, driving a corresponding second product term line, thereby being brought to an enable state even in a write operation of data.
Claim 4
Dependent Claim 65 words
A device as set forth in claim 2, wherein said first transistor and said second transistor constitute an inverter and a third N channel type transistor is connected between an input of said inverter and said first product term line, a gate of said third transistor receiving a bias voltage preset to a half of a voltage employed in a normal operation of said device.
Claim 5
Dependent Claim 60 words
A device as set forth in claim 3, wherein said inverter is composed of an N type metal oxide semiconductor structure and a fourth P channel type transistor is connected between said input of said inverter and a power supply line employed in said normal operation, a gage of said fourth transistor being connected to said second power supply line.
Claim 6
Dependent Claim 55 words
A device as set forth in claim 3, wherein said inverter is composed of a complementary metal oxide semiconductor structure and a fifth P channel type transistor is connected between said input of said inverter and said first power supply line, a gate of said fifth transistor being connected to said second power supply line.
Claim 7
Dependent Claim 55 words
A device as set forth in claim 2, wherein said first power supply line changeable between two voltage values normally has a voltage necessary for a normal operation of said device and is changed to a voltage higher than said voltage necessary for normal device operation when said write operation of data is carried out.

References Cited (Backward Citations)

US4041459A Cited
US4488229A Cited
US4661922A Cited
US4745579A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-03-26 1993-09-25 1994-03-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-03-26 1997-09-25 1998-03-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-03-26 2001-09-25 2002-03-27 $7700.00 Window Closed / Lapsed

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