US4937787A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Programmable read only memory with means for discharging bit line before program verifying operation
Assignee: NEC Electronics Corp
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Filing: 1988-06-27
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Granted: 1990-06-26
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Expires: 2008-06-27
Abstract
Abstract A semiconductor memory in which each of memory cells includes a memory transistor having a control gate connected to a word line, a floating gate and a drain-source path connected to a bit line, is disclosed. In a data programming operation mode, a programming voltage is applied via the word and bit lines to the control gate and the drain-source path of the memory transistor to inject carriers into the floating gate thereof. In order to detect whether or not the memory transistor is well programmed, a program verifying operation is carried out successively. To this end, the bit line is discharged to the low level and the word line is then supplied with a reading-out voltage. If the data programming is insufficient, the memory transistor is turned ON by the reading-out voltage, so that the bit line is held at a level near the low level. On the other hand, in case where the memory transistor is well programmed, it is not turned ON by the reading-out, so that the bit line is charged.
Inventors
- 👤 Hiroyuki Kobatake
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 07:24
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/38
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
220 words
A semiconductor memory comprising a plurality of word lines, a plurality of bit lines intersecting said word lines, a plurality of programmable memory cells coupled to said word lines and said bit lines, a first terminal receiving a first voltage, a second terminal receiving a second voltage larger than said first voltage, a third terminal receiving a control signal assuming one of first and second levels, a first row selector circuit for selectively setting one of said word lines approximately at said first voltage when enabled, a second row selection circuit for selectively applying said second voltage to one of said word lines when enabled, a column program circuit for selectively applying said second voltage to at least one of said bit lines when enabled, a first control circuit for enabling said column program circuit in response to said first level of said control signal, and a second control circuit for enabling said first row selection circuit and disenabling said second row selection circuit after a predetermined period of time elapses from a change of said control signal from said first level to said second level and enabling said second row selection circuit and disenabling said first row selection circuit during a first period when said control signal assumes said first level and said predetermined period following said first period.
Claim 2
Dependent Claim
220 words
A semiconductor memory comprising a plurality of word lines, a plurality of bit lines intersecting said word lines, a plurality of programmable memory cells coupled to said word lines and said bit lines, a first terminal receiving a first voltage, a second terminal receiving a second voltage larger than said first voltage, a third terminal receiving a control signal assuming one of first and second levels, a first row selector circuit for selectively setting one of said word lines approximately at said first voltage when enabled, a second row selection circuit for selectively applying said second voltage to one of said word lines when enabled, a column program circuit for selectively applying said second voltage to at least one of said bit lines when enabled, a first control circuit for enabling said column program circuit in response to said first level of said control signal, and a second control circuit for enabling said first row selection circuit and disenabling said second row selection circuit after a predetermined period of time elapses from a change of said control signal from said first level to said second level and enabling said second row selection circuit and disenabling said first row selection circuit during a first period when said control signal assumes said first level and said predetermined period following said first period.
Claim 3
Dependent Claim
50 words
The semiconductor memory as claimed in claim 1, wherein each of said programmable memory cells includes a field effect transistor having a control gate connected to one of said word lines, a floating gate and a drain-source path connected between one of said bit lines and a reference potential point.
Claim 4
Dependent Claim
36 words
A semiconductor memory as claimed in claim 1, wherein said second control circuit includes a delay circuit receiving said control signal, said predetermined period of time being determined by a delay time of said delay circuit.
Claim 5
Dependent Claim
256 words
A semiconductor memory comprising a plurality of word lines, a plurality of bit lines, a plurality of memory transistors, each of said memory transistors having a control gate coupled to one of said word lines, a floating gate and a drain-source path connected between one of said bit lines and a reference potential point, a first terminal receiving a first voltage, a second terminal receiving a second voltage having a larger value than said first voltage, a third terminal receiving a control signal assuming one of first and second levels, all of said memory transistors being rendered conductive irrespective of data stored therein when their control gates are supplied with said second voltage, said memory transistors being selectively rendered conductive and nonconductive according to data stored therein when their control gates are supplied with said first voltage, first means coupled between said first terminal and said word lines for operatively transferring said first voltage to one of said word lines when enabled, second means coupled between said second terminal and said word lines for operatively transferring said second voltage to one of said word lines when enabled, third means coupled to said third terminal for enabling said second means in response to said first level, and fourth means coupled to said third terminal and responsive to a change of said control signal from said first level to said second level for enabling said first means to transfer said first voltage to one of said word lines after a predetermined period of time elapses from said change.
Claim 6
Dependent Claim
256 words
A semiconductor memory comprising a plurality of word lines, a plurality of bit lines, a plurality of memory transistors, each of said memory transistors having a control gate coupled to one of said word lines, a floating gate and a drain-source path connected between one of said bit lines and a reference potential point, a first terminal receiving a first voltage, a second terminal receiving a second voltage having a larger value than said first voltage, a third terminal receiving a control signal assuming one of first and second levels, all of said memory transistors being rendered conductive irrespective of data stored therein when their control gates are supplied with said second voltage, said memory transistors being selectively rendered conductive and nonconductive according to data stored therein when their control gates are supplied with said first voltage, first means coupled between said first terminal and said word lines for operatively transferring said first voltage to one of said word lines when enabled, second means coupled between said second terminal and said word lines for operatively transferring said second voltage to one of said word lines when enabled, third means coupled to said third terminal for enabling said second means in response to said first level, and fourth means coupled to said third terminal and responsive to a change of said control signal from said first level to said second level for enabling said first means to transfer said first voltage to one of said word lines after a predetermined period of time elapses from said change.
Claim 7
Dependent Claim
44 words
The semiconductor memory according to claim 4, further comprising fifth means coupled between said second terminal and said bit lines for operatively transferring said second voltage to at least one of said bit lines in response to said first level of said control signal.
Claim 8
Dependent Claim
35 words
The semiconductor memory according to claim 4, wherein said fourth means includes delay circuit means for delaying said change, said predetermined period of time being determined by a delay time of said delay circuit means.
Claim 9
Dependent Claim
189 words
A semiconductor memory comprising a memory transistor having a control gate, a floating gate and a drain-source path, a first terminal supplied with a first voltage, a second terminal supplied with a second voltage that is larger than said first voltage, a third terminal supplied with a control signal changing between first and second logic levels, first means coupled between said first terminal and said control gate of said memory transistor for operatively transferring said first voltage to said control gate, second means coupled between said second terminal and said control gate of said memory transistor for operatively transferring said second voltage to said control gate, third means coupled to said third terminal and responsive to said first logic level of said control signal for instructing said second means to transfer said second voltage to said control gate, and fourth means coupled to said third terminal and responsive to a change of said control signal from said first logic level to said second logic level for instructing said first means to transfer said first voltage to said control gate after a predetermined period of time elapses from said change.
Claim 10
Dependent Claim
189 words
A semiconductor memory comprising a memory transistor having a control gate, a floating gate and a drain-source path, a first terminal supplied with a first voltage, a second terminal supplied with a second voltage that is larger than said first voltage, a third terminal supplied with a control signal changing between first and second logic levels, first means coupled between said first terminal and said control gate of said memory transistor for operatively transferring said first voltage to said control gate, second means coupled between said second terminal and said control gate of said memory transistor for operatively transferring said second voltage to said control gate, third means coupled to said third terminal and responsive to said first logic level of said control signal for instructing said second means to transfer said second voltage to said control gate, and fourth means coupled to said third terminal and responsive to a change of said control signal from said first logic level to said second logic level for instructing said first means to transfer said first voltage to said control gate after a predetermined period of time elapses from said change.
Claim 11
Dependent Claim
36 words
The semiconductor memory as claimed in claim 7, wherein said fourth means includes delay circuit means for delaying said change, said predetermined period of time being determined by a delay time of said delay circuit means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |