US5407841A
Expired / Lapsed
US
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CBiCMOS fabrication method using sacrificial gate poly
Assignee: Raytheon Co
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Filing: 1992-10-30
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Granted: 1995-04-18
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Expires: 2012-10-30
Abstract
Abstract A complementary bipolar CMOS fabrication method uses a common deposition for both the CMOS gate contacts, and as a sacrificial layer for patterning bipolar devices. The deposition is removed from the bipolar devices and, after implanting base and emitter regions, is replaced with a separate emitter contact. Prior to its removal the sacrificial layer is coated with an oxidation resistant layer that imparts a desirable rounded shape to the edge of a thermal oxide layer that is grown around the bipolar emitter area. Common mask and implant steps are also used to fabricate lightly doped CMOS drains together with bipolar base-link regions, and CMOS source/drain regions together with bipolar external base regions. The fabrication technique also facilitates the fabrication of capacitors with no additional steps required, and includes an improved NiCr resistor contact method.
Inventors
- 👤 Kuan-Yang Liao
- 👤 Maw-Rong Chin
- 👤 Pen C. Chou
- 👤 Kirk R. Osborne
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:30
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10D84/403; Y; Y10; Y10S; Y10S148/00; Y10S148/009
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
150 words
A BiMOS (bipolar metal oxide semiconductor) transistor fabrication method, said method comprising the steps of: forming common MOS gate contact layers over bipolar transistor emitter and MOS transistor gate areas on a semiconductor substrate, retaining said gate contact layer over said gate area as a MOS transistor gate contact, performing a dopant implant into said substrate to form an external base for said bipolar transistor around its associated gate contact layer, forming source and drain regions for said MOS transistor, and a collector region for said bipolar transistor that is spaced from said gate contact layer over the emitter area, removing said gate contact layer from over the bipolar transistor emitter area, forming vertically aligned base and emitter regions for said bipolar transistor, and forming a common patterned non-metal contact layer over said emitter region and said external base to serve as an emitter and an external base contact, respectively.
Claim 2
Dependent Claim
150 words
A BiMOS (bipolar metal oxide semiconductor) transistor fabrication method, said method comprising the steps of: forming common MOS gate contact layers over bipolar transistor emitter and MOS transistor gate areas on a semiconductor substrate, retaining said gate contact layer over said gate area as a MOS transistor gate contact, performing a dopant implant into said substrate to form an external base for said bipolar transistor around its associated gate contact layer, forming source and drain regions for said MOS transistor, and a collector region for said bipolar transistor that is spaced from said gate contact layer over the emitter area, removing said gate contact layer from over the bipolar transistor emitter area, forming vertically aligned base and emitter regions for said bipolar transistor, and forming a common patterned non-metal contact layer over said emitter region and said external base to serve as an emitter and an external base contact, respectively.
Claim 3
Dependent Claim
67 words
The BiMOS fabrication method of claim 1, further comprising the steps of forming common gate oxide layers over said gate and emitter areas prior to the formation of said common gate contact layers, and removing the gate oxide layer from said emitter area after removing said gate contact from said emitter area but retaining the gate oxide layer in said gate area under the gate contact layer.
Claim 4
Dependent Claim
36 words
The BiMOS fabrication method of claim 2, wherein said base and emitter regions are formed by respective base and emitter implants into said emitter area after removal of said gate contact layer from said emitter area.
Claim 5
Dependent Claim
52 words
The BiMOS fabrication method of claim 1, further comprising the steps of forming a implantation mask over and surrounding the emitter's gate contact layer prior to the implantation of said external base, and thereafter removing said mask in conjunction with the removal of said gate contact layer from over said emitter area.
Claim 6
Dependent Claim
60 words
The BiMOS fabrication method of claim 4, wherein a base-link portion of said base region is implanted in said substrate prior to forming said implantation mask, using said gate contact layer over the emitter area to pattern said base-link implantation, wherein at least one portion of said implantation mask that surrounds the emitter's gate contact layer overlies said base-link portion.
Claim 7
Dependent Claim
31 words
The BiMOS fabrication method of claim 5, wherein a lightly doped drain implant is made for said MOS transistor using the same mask and implant step as for said base-link implantation.
Claim 8
Dependent Claim
27 words
The BiMOS fabrication method of claim 1, wherein a source/drain implant is made for said MOS transistor concurrently with said external base implant, using a common mask.
Claim 9
Dependent Claim
39 words
The BiMOS fabrication method of claim 1, further comprising the concurrent formation of complementary bipolar transistors, wherein said common patterned non-metal contact layer is formed over the emitter and external base areas of both npn and pnp bipolar transistors.
Claim 10
Dependent Claim
16 words
The BiMOS fabrication method of claim 1, further comprising the concurrent formation of complementary MOS transistors.
Claim 11
Dependent Claim
170 words
A BiMOS (bipolar metal oxide semiconductor) transistor fabrication method, said method comprising the steps of: forming common MOS gate contact layers over bipolar transistor emitter and MOS transistor gate areas on a semiconductor substrate, retaining said gate contact layer over said gate area as a MOS transistor gate contact, performing a dopant implant into said substrate to form an external base for said bipolar transistor around its associated gate contact layer, forming source and drain regions for said MOS transistor, and a collector region for said bipolar transistor that is spaced from said the gate contact layer over the emitter area, heating said substrate to form a thermal oxide layer on said substrate; using said gate contact layer over the emitter area as an oxidation mask for said emitter area during said heating; removing said gate contact layer from over the bipolar transistor's emitter, forming vertically aligned base and emitter regions for said bipolar transistor, and forming another contact layer over said emitter region to serve as an emitter contact.
Claim 12
Dependent Claim
170 words
A BiMOS (bipolar metal oxide semiconductor) transistor fabrication method, said method comprising the steps of: forming common MOS gate contact layers over bipolar transistor emitter and MOS transistor gate areas on a semiconductor substrate, retaining said gate contact layer over said gate area as a MOS transistor gate contact, performing a dopant implant into said substrate to form an external base for said bipolar transistor around its associated gate contact layer, forming source and drain regions for said MOS transistor, and a collector region for said bipolar transistor that is spaced from said the gate contact layer over the emitter area, heating said substrate to form a thermal oxide layer on said substrate; using said gate contact layer over the emitter area as an oxidation mask for said emitter area during said heating; removing said gate contact layer from over the bipolar transistor's emitter, forming vertically aligned base and emitter regions for said bipolar transistor, and forming another contact layer over said emitter region to serve as an emitter contact.
Claim 13
Dependent Claim
52 words
The BiMOS fabrication method of claim 10, further comprising the step of forming a non-oxidizable spacer layer around the vertical sides of the said emitter gate contact layer prior to said heating step, said spacer layer constraining said thermal oxide layer to terminate in a bird's beak profile around the emitter edge.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |