US3649945A
Expired / Lapsed
US
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Thin film resistor contact
Assignee: Fairchild Semiconductor Corp
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Filing: 1971-01-20
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Granted: 1972-03-14
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Expires: 1991-01-20
Abstract
Abstract An intermediate layer of molybdenum is interposed between the aluminum interconnect layer of a semiconductor device and a thin resistive film of nickel chromium, silicon-metal, or doped silicon to prevent a reaction between the resistive film and the aluminum layer, particularly during exposure to relatively high temperatures.
Inventors
- 👤 Robert K Waits
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:46
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; H01; H01C; H01C1/00; H01C1/14; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
39 words
Structure as in claim 1 wherein the first layer comprises silicon-metal, the metal being selected from the group consisting of chromium, molybdenum, tungsten, vanadium, niobium, tantalum, titanium, zirconium, and hafnium wherein the proportion of silicon exceeds 67 atomic percent.
Claim 2
Dependent Claim
38 words
Structure as in claim 1 wherein the first layer is approximately 100 to 200 angstroms thick, the second layer is approximately 1 to 1 1/2 micrometers thick, and the third layer is approximately 500 to 5,000 angstroms thick.
Claim 3
Dependent Claim
16 words
Structure as in claim 1 further defined by a substrate supporting the first and second layers.
Claim 4
Dependent Claim
35 words
Structure as in claim 4 whereiN the supporting substrate comprises a layer of semiconductor material, the structure further defined by a dielectric layer interposed between the substrate and portions of the first and second layers.
Claim 5
Dependent Claim
12 words
Structure as in claim 5 wherein the dielectric material comprises an oxide.
Claim 6
Dependent Claim
59 words
In a structure comprising a thin film layer of resistive material with an aluminum interconnect layer located over a portion of the film layer material, the structure characterized in that an intermediate layer of molybdenum is interposed between the film layer and the aluminum layer to prevent interdiffusion between the aluminum and the film layer at relatively high temperatures.
Claim 7
Dependent Claim
22 words
Structure as in claim 7 wherein the film material is selected from the group consisting of nickel chromium, silicon-metal, and doped silicon.
Claim 8
Dependent Claim
12 words
Structure as in claim 8 wherein the film material comprises nickel chromium.
References Cited (Backward Citations)
US2786925A
Cited
US3325258A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-14 | 1975-09-13 | 1976-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-14 | 1979-09-13 | 1980-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-14 | 1983-09-13 | 1984-03-14 | $7700.00 | Window Closed / Lapsed |