Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film

Claim 1

A semiconductor device comprising: a semiconductor substrate, an insulating layer covering said semiconductor substrate, and a capacitor element formed on said insulating layer, said capacitor element including: a first electrically conductive layer formed on said insulating layer and having a top surface and a side surface, the top surface of said first electrically conductive layer having first and second portions, a first barrier metal formed on said first portion of the top surface of said first electrically conductive layer and having a top surface and a side surface, a dielectric film formed on the top surface of said first barrier metal and having a top surface and a side surface, an interlayer insulating film formed on and covering the side surface and the second portion of the top surface of said first electrically conductive layer, said interlayer insulating film being further formed on and covering the side surfaces of said first barrier metal and said dielectric film, said interlayer insulating film being elongated on a peripheral portion of the top surface of said dielectric film leaving a center portion of the top surface of said dielectric film exposed, a second barrier metal formed on said center portion of said dielectric film and elongated on said interlayer insulating film, a second electrically conductive layer formed on said second barrier metal, a contact hole selectively formed in said interlayer insulating film to expose a part of said second portion of the top surface of said first electrically conductive layer, and a third electrically conductive layer formed in contact with said part of said second portion of the top surface of said first electrically conductive layer through said contact hole.