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Patent US5376225A successfully refreshed from Google Patents.
US5376225A
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Method of forming fine structure on compound semiconductor with inclined ion beam etching
Assignee: Panasonic Holdings Corp
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Filing: 1993-01-11
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Granted: 1994-12-27
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Expires: 2013-01-11
Abstract
Abstract A first method of forming a fine structure on a compound semiconductor for providing vertical side wall surfaces of a wire is as follows: One side wall surface of a wire is formed by applying an ion beam for etching with a predetermined incident angle on the side of this side wall surface to a surface of a compound semiconductor layer having a multiquantum well structure, covered with a first mask to from this side wall surface; and then, the other side wall surface is formed by applying the ion beam with the predetermined incident angle from the side of the other side wall surface to be formed after removal of the first mask and forming a second mask for forming the other side wall surface. In a second method, a third mask having a stripe pattern is formed on the surface of the compound semiconductor; one side of the wire is formed by first etching with the slantwise incident ion beam. The second etching is also formed similarly by the ion beam with the one side wall surface is protected. In the third method, a substantially circle mask is formed; and etched with the slantwise incident ion beam with the work being rotated.
Inventors
- 👤 Shinichi Wakabayashi
- 👤 Hitomaro Tougou
- 👤 Yukio Toyoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/014; B; B82; B82Y; B82Y10/00; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947; Y10S438/962
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
112 words
A method of forming a wire on a compound semiconductor having a quantum well structure, which comprises the steps of: (a) forming a first etching mask for providing one side wall surface of said wire; (b) etching said compound semiconductor with a directional ion beam having a predetermined incident angle inclined to the side of said one side wall surface with respect to said wire; (c) forming a second etching mask for providing the other side wall surface of said wire; and (d) etching said compound semiconductor with said directional ion beam having said predetermined incident angle inclined to the side of the other side wall surface with respect to said wire.
Claim 2
Independent Claim
112 words
A method of forming a wire on a compound semiconductor having a quantum well structure, which comprises the steps of: (a) forming a first etching mask for providing one side wall surface of said wire; (b) etching said compound semiconductor with a directional ion beam having a predetermined incident angle inclined to the side of said one side wall surface with respect to said wire; (c) forming a second etching mask for providing the other side wall surface of said wire; and (d) etching said compound semiconductor with said directional ion beam having said predetermined incident angle inclined to the side of the other side wall surface with respect to said wire.
Claim 3
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 1, wherein said directional ion beam is a reactive ion beam.
Claim 4
Dependent Claim
26 words
A method of forming a wire on a compound semiconductor as claimed in claim 1, wherein said quantum well structure is a single quantum well structure.
Claim 5
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 1, wherein said quantum well structure is a multiquantum well structure.
Claim 6
Dependent Claim
32 words
A method of forming a wire on a compound semiconductor as claimed in claim 1, wherein a width of said second etching mask is a larger width than that of said wire.
Claim 7
Independent Claim
95 words
A method of forming a fine structure on a compound semiconductor having a quantum well structure, which comprises the steps of: (a) forming a substantially circular etching mask on a compound semiconductor substrate having a quantum structure; (b) etching said compound semiconductor with a directional ion beam having a predetermined incident angle; and (c) rotating said compound semiconductor during step (b) around a normal thereof, said predetermined incident angle being selected such that a side wall of said compound semiconductor as the result of the steps (b) and (c) being substantially parallel to said normal.
Claim 8
Independent Claim
95 words
A method of forming a fine structure on a compound semiconductor having a quantum well structure, which comprises the steps of: (a) forming a substantially circular etching mask on a compound semiconductor substrate having a quantum structure; (b) etching said compound semiconductor with a directional ion beam having a predetermined incident angle; and (c) rotating said compound semiconductor during step (b) around a normal thereof, said predetermined incident angle being selected such that a side wall of said compound semiconductor as the result of the steps (b) and (c) being substantially parallel to said normal.
Claim 9
Dependent Claim
26 words
A method of forming a wire on a compound semiconductor as claimed in claim 6, wherein said quantum well structure is a single quantum well structure.
Claim 10
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 6, wherein said quantum well structure is a multiquantum well structure.
Claim 11
Dependent Claim
34 words
A method of forming a wire on a compound semiconductor as claimed in claim 6, wherein a plurality of said substantially circular etching mask are arranged in an array on said compound semiconductor substrate.
Claim 12
Dependent Claim
26 words
A method of forming a wire on a compound semiconductor as claimed in claim 6, wherein said quantum well structure is a single quantum well structure.
Claim 13
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 6, wherein said quantum well structure is a multiquantum well structure.
Claim 14
Independent Claim
251 words
A method of forming a fine structure on a compound semiconductor, which comprises the steps of: (a) covering a first portion of a surface of a compound semiconductor layer formed on a surface of a substrate with a first etching mask, wherein the compound semiconductor layer comprises a quantum well structure and an edge of said first etching mask defines a first line on the surface of the compound semiconductor; (b) etching said compound semiconductor and said first etching mask by applying an ion beam to said first etching mask and said compound semiconductor from a first direction, at a predetermined elevation angle from a second line perpendicular to said first line and in the same plane as the surface of the compound semiconductor, to form a side wall surface between the first portion of the surface of the compound semiconductor covered by the first etching mask and a second portion of the compound semiconductor that is not covered by the first etching mask and is etched by the ion beam; (c) removing said first etching mask; (d) covering a stripe portion of said first portion of the surface of the compound semiconductor extending from said first line by a predetermined width and the side wall surface provided by step (b) with a second etching mask; and (e) etching said compound semiconductor and said second etching mask by applying said ion beam in a second direction opposite from the side wall surface at said predetermined elevation angle from said second line.
Claim 15
Independent Claim
251 words
A method of forming a fine structure on a compound semiconductor, which comprises the steps of: (a) covering a first portion of a surface of a compound semiconductor layer formed on a surface of a substrate with a first etching mask, wherein the compound semiconductor layer comprises a quantum well structure and an edge of said first etching mask defines a first line on the surface of the compound semiconductor; (b) etching said compound semiconductor and said first etching mask by applying an ion beam to said first etching mask and said compound semiconductor from a first direction, at a predetermined elevation angle from a second line perpendicular to said first line and in the same plane as the surface of the compound semiconductor, to form a side wall surface between the first portion of the surface of the compound semiconductor covered by the first etching mask and a second portion of the compound semiconductor that is not covered by the first etching mask and is etched by the ion beam; (c) removing said first etching mask; (d) covering a stripe portion of said first portion of the surface of the compound semiconductor extending from said first line by a predetermined width and the side wall surface provided by step (b) with a second etching mask; and (e) etching said compound semiconductor and said second etching mask by applying said ion beam in a second direction opposite from the side wall surface at said predetermined elevation angle from said second line.
Claim 16
Dependent Claim
26 words
A method of forming a wire on a compound semiconductor as claimed in claim 12, wherein said quantum well structure is a single quantum well structure.
Claim 17
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 12, wherein said quantum well structure is a multiquantum well structure.
Claim 18
Independent Claim
211 words
A method of forming a fine structure on a compound semiconductor, which comprises the steps of: (a) forming a first etching mask comprising a plurality of first stripes, each first stripe having a first predetermined width and an edge that defines a first line on a surface of a compound semiconductor layer formed on a substrate, wherein the compound semiconductor layer includes a quantum well structure; (b) etching said compound semiconductor and said first etching mask by applying an ion beam to said first etching mask and said compound semiconductor at a first direction having a predetermined elevation angle from second lines perpendicular to said first lines and in the same plane as the surface of the compound semiconductor; (c) removing said first etching mask; (d) filling etched portions of the compound semiconductor with resist; (e) forming a second etching mask comprising a plurality of second stripes, each having a second predetermined width, larger than said first predetermined width, extending from said first line over a portion of the resist filling the etched portions of the compound semiconductor; (f) removing said resist; and (g) etching said compound semiconductor and said second etching mask by applying said ion beam in a second direction having said predetermined elevation angle from said second lines.
Claim 19
Independent Claim
211 words
A method of forming a fine structure on a compound semiconductor, which comprises the steps of: (a) forming a first etching mask comprising a plurality of first stripes, each first stripe having a first predetermined width and an edge that defines a first line on a surface of a compound semiconductor layer formed on a substrate, wherein the compound semiconductor layer includes a quantum well structure; (b) etching said compound semiconductor and said first etching mask by applying an ion beam to said first etching mask and said compound semiconductor at a first direction having a predetermined elevation angle from second lines perpendicular to said first lines and in the same plane as the surface of the compound semiconductor; (c) removing said first etching mask; (d) filling etched portions of the compound semiconductor with resist; (e) forming a second etching mask comprising a plurality of second stripes, each having a second predetermined width, larger than said first predetermined width, extending from said first line over a portion of the resist filling the etched portions of the compound semiconductor; (f) removing said resist; and (g) etching said compound semiconductor and said second etching mask by applying said ion beam in a second direction having said predetermined elevation angle from said second lines.
Claim 20
Dependent Claim
26 words
A method of forming a wire on a compound semiconductor as claimed in claim 15, wherein said quantum well structure is a single quantum well structure.
Claim 21
Dependent Claim
25 words
A method of forming a wire on a compound semiconductor as claimed in claim 15, wherein said quantum well structure is a multiquantum well structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |