US4851368A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making travelling wave semi-conductor laser
Assignee: Cornell Research Foundation Inc
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Filing: 1987-12-04
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Granted: 1989-07-25
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Expires: 2007-12-04
Abstract
Abstract A triangular ring laser utilizing total internal reflection at two angled facets and a preselected amount of reflection at a third angled facet is disclosed. Partial transmission occurs through the third facet to reduce the threshold current required for achieving stimulated emission. The facets are at three corners of the triangular laser, and are formed by chemically assisted ion beam etching in which SiO 2 is used as a mask, whereby smooth vertical walls are produced to form facets having reflective characteristics equivalent to those formed by cleaving.
Inventors
- 👤 Abbas Behfar-Rad
- 👤 S. Simon Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:32
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/1071; H01S5/02; H01S5/028; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/056; Y10S148/095; Y10S148/106; Y10S148/111; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
187 words
A method for producing a facet for a semiconductor laser comprising: forming a monolithic wafer of GaAlAs semiconductor material having upper and lower parallel surfaces, and an intermediate laser active region parallel to said surfaces; depositing on said upper surface a uniform etch mask layer; forming on the top of said etch mask layer a resist layer of photoresist material; forming on said resist layer a layer of contrast enhanced material; exposing said resist layer, removing said contrast enhanced material, and developing said resist layer to produce a plan view photoresist pattern of said facet in said resist layer; reactive ion etching said etch mask layer through said photoresist pattern in said resist layer to transfer said photoresist pattern to said etch mask layer to form a patterned etch mask; removing said resist layer; etching said wafer by chemically assisted ion beam etching through said etch mask layer into and past said laser active region of said wafer to produce a smooth facet in said wafer at a location determined by said pattern and extending perpendicular to said upper and lower surfaces and through said active region.
Claim 2
Independent Claim
187 words
A method for producing a facet for a semiconductor laser comprising: forming a monolithic wafer of GaAlAs semiconductor material having upper and lower parallel surfaces, and an intermediate laser active region parallel to said surfaces; depositing on said upper surface a uniform etch mask layer; forming on the top of said etch mask layer a resist layer of photoresist material; forming on said resist layer a layer of contrast enhanced material; exposing said resist layer, removing said contrast enhanced material, and developing said resist layer to produce a plan view photoresist pattern of said facet in said resist layer; reactive ion etching said etch mask layer through said photoresist pattern in said resist layer to transfer said photoresist pattern to said etch mask layer to form a patterned etch mask; removing said resist layer; etching said wafer by chemically assisted ion beam etching through said etch mask layer into and past said laser active region of said wafer to produce a smooth facet in said wafer at a location determined by said pattern and extending perpendicular to said upper and lower surfaces and through said active region.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the step of reactive ion etching is conducted at a low power to minimize heating of the photoresist layer.
Claim 4
Dependent Claim
44 words
The method of claim 1, wherein the step of exposing and developing said photoresist layer includes exposing the photoresist layer to a plan view pattern of a semiconductor body including at least three mirror facets to produce a corresponding pattern in said photoresist layer.
Claim 5
Dependent Claim
37 words
The method of claim 3, wherein the step of reactive ion etching produces a patterned etch mask corresponding to said semiconductor body pattern, whereby said ion beam etching step forms a semiconductor laser body from said wafer.
Claim 6
Dependent Claim
31 words
The method of claim 1, further including the step of forming metalized contacts on said semiconductor laser body for applying current across said semiconductor to stimulate laser action in the body.
Claim 7
Dependent Claim
24 words
The method of claim 4, further including the step of removing said etch mask layer from said upper surface of said semiconductor laser body.
Claim 8
Dependent Claim
85 words
The method of claim 4, further including: forming a second resist layer of photoresist material on said etch mask layer carried by said laser body; producing a contact pattern in said second resist layer by photolithography and developing said second resist layer to produce contact openings in said second resist layer; removing said etch mask layer from said laser body in said contact openings to expose corresponding regions of the top surface of said laser body; and metallizing said exposed regions of said top surface;
Claim 9
Independent Claim
262 words
A method for producing a semiconductor laser having a triangular traveling wave path, comprising: forming a wafer of semiconductor material having upper and lower parallel surfaces and an intermediate laser active region parallel to said surfaces; depositing on said upper surface a uniform etch mask layer; forming on the top of said etch mask layer a resist layer of photoresist material; exposing said resist layer to a plan view pattern of a semiconductor laser body having three facets at predetermined angles with respect to each other to define a traveling wave path within the laser body wherein the angle of incidence of a traveling wave following said path on two of said three facets will be greater than the critical angle and will be less than the critical angle on the third facet; developing said resist layer to produce said plan view pattern in said resist layer; reactive ion etching said etch mask layer through said plan view pattern in said resist layer to transfer said plan view semiconductor laser body pattern to said etch mask laser to form a patterned etch mask; removing said resist layer; etching said wafer by chemically assisted ion beam etching through said etch mask layer said ion beam etching extending into and past said laser active region of said wafer to produce a semiconductor laser body including three smooth facets extending perpendicular to said upper and lower surfaces and through said active region, said facets being located at said predetermined angles with respect to each other to define a traveling wave path within said laser body.
Claim 10
Independent Claim
262 words
A method for producing a semiconductor laser having a triangular traveling wave path, comprising: forming a wafer of semiconductor material having upper and lower parallel surfaces and an intermediate laser active region parallel to said surfaces; depositing on said upper surface a uniform etch mask layer; forming on the top of said etch mask layer a resist layer of photoresist material; exposing said resist layer to a plan view pattern of a semiconductor laser body having three facets at predetermined angles with respect to each other to define a traveling wave path within the laser body wherein the angle of incidence of a traveling wave following said path on two of said three facets will be greater than the critical angle and will be less than the critical angle on the third facet; developing said resist layer to produce said plan view pattern in said resist layer; reactive ion etching said etch mask layer through said plan view pattern in said resist layer to transfer said plan view semiconductor laser body pattern to said etch mask laser to form a patterned etch mask; removing said resist layer; etching said wafer by chemically assisted ion beam etching through said etch mask layer said ion beam etching extending into and past said laser active region of said wafer to produce a semiconductor laser body including three smooth facets extending perpendicular to said upper and lower surfaces and through said active region, said facets being located at said predetermined angles with respect to each other to define a traveling wave path within said laser body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |