Optical integrated circuit

Claim 2

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second (active) layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces.

Claim 3

The semiconductor laser of claim 1, wherein mirror means is disposed on at least one of said end faces of said resonator, said mirror means comprising of an insulating film covered by a layer of metal.

Claim 4

The semiconductor laser of claim 2, wherein a thickness t of said insulating film is approximately t=(γ/2)·(λ/n), where γ is an integer, λ is a free-space wavelength of light, and n is a refractive index of said insulating film.

Claim 5

The semiconductor laser of claim 3, wherein said insulating film is formed of a material selected from the group consisting of AlN, SiO 2 , SiN 4 , GaN, BN and Al 2 O 3 .

Claim 6

The semiconductor laser of claim 4, wherein said metal is formed of a material selected from the group consisting of Au, Al, Mo and W.

Claim 7

The semiconductor laser of any one of claims 2, 3, 4 and 5 wherein; said substrate and first layer have a first conductivity type, a fourth layer of a second conductivity type, opposite to said first conductivity type, is formed between said substrate and said first layer and has a greater refractive index than said cladding layers; said first layer has an elongated thickened portion extending through said fourth layer to said substrate; said third layer has said second conductivity type; a highly doped cathode region of said second conductivity type is formed in said third region and is electrically conencted to said second electrode means; a gate region of said first conductivity type is formed in said third layer, said gate region surrounding said cathode region; said substrate comprising a highly doped region having said first conductivity type serves as an anode electrically connected to said first electrode means.

Claim 8

The semiconductor laser of claim 6 wherein; a fifth layer with a band gap smaller than that of said cladding layers is formed on said third layer to decrease the contact resistance of the electrodes; said gate region extends to said third layer through said fifth layer; said cathode region extends to said third layer through said fifth layer or is formed only at said fifth layer, said gate region depth is deeper than that of said cathode region.

Claim 9

The semiconductor laser of claim 6, wherein; said substrate is formed of n + or p + GaAs and has an impurity concentration higher than 1×10 18 cm -3 ; said first layer is formed of n + or p + GaAlAs and has an impurity concentration higher than 5×10 17 cm -3 and a thickness in a range of 0.05 to 0.5 μm, except for said thickened portion which has a thickness in a range of 1 to 5 μm; said second layer is formed of GaAs or GaAlAs and has a thickness in a range of 0.05 to 0.5 μm has a band gap smaller than that of said cladding layer; said third layer is formed of p or n GaAlAs and has an impurity concentration in a range of 1×10 10 to 1×10 16 cm -3 and a thickness in a range of 0.5 to 3 μm; said fourth layer is formed of p + or n + GaAs or GaAlAs and has an impurity concentration higher than 1×10 17 cm -3 and a thickness in a range of 0.5 to 5 μm and a refractive index larger than that of said cladding layer; said gate region is formed of n + or p + region and has an impurity concentration higher than 1×10 18 cm -3 ; and said cathode region is formed of p + or n + region and has an impurity concentration higher than 1×10 18 cm -3 .

Claim 10

The semiconductor laser of claim 8, wherein a distance between paired gates is in a range of 0.3 to 3 μm.

Claim 11

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5 wherein; a fifth layer of a first conductivity type is buried in said substrate along said resonator and a part of said fifth layer extends to a surface of said semiconductor laser; a fourth layer of a second conductivity type, opposite to said first conductivity type, is formed between said substrate and said first layer and has a greater refractive index than said cladding layer; said first layer has said first conductivity type and an elongated thickened portion extending thorugh said fourth layer to said fifth layer; a highly doped cathode region of said second conductivity type is formed adjacent to said third layer and is electrically connected to said second electrode means; said third layer has said second conductivity type, said gate region of said first conductivity type is formed in said third layer, said gate region surroudning said cathode region and said gate region depth is deeper than that of said cathode region; and said fifth layer serves as an anode electrically connected to said first electrode means, and said substrate is semi-insulating or of said second conductivity type.

Claim 12

The semiconductor laser of claim 10, wherein; a sixth layer of a band gap smaller than that of said cladding layer is formed on said third layer; said gate region extends through said sixth layer to said third layer; said cathode region extends to said third layer through said sixth layer or is formed only at said sixth layer.

Claim 13

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5, wherein; said substrate, said first layer, said second layer and said third layer are of a first conductivity type; an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer.

Claim 14

The semiconductor laser of claim 12, wherein said structure comprises a fourth layer of a second conductivity type, opposite to said first conductivity type, being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate.

Claim 15

The semiconductor laser of claim 13, wherein said first layer comprises a thickened portion lying beneath said elongated region; said fourth layer has the larger refractive index than said first layer.

Claim 16

The semiconductor laser of any one of claims 13 and 14, wherein said first conductivity type is n and said second conductivity type is p.

Claim 17

The semiconductor laser of claim 12, wherein a width of said elongated region is less than twice a diffusion length of an electron in said elongated region.

Claim 18

The semiconductor laser of claim 14, wherein a width of said elongated region is less than twice a diffusion length of an electron in said elongated region.

Claim 19

The semiconductor laser of claim 12, further comprising an insulating layer formed on said third layer.

Claim 20

The semiconductor laser of claim 14, further comprising an insulating layer formed on said third layer.

Claim 21

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5, wherein said structure comprises; said substrate, said first layer and said second layer of said first conductivity type; said third layer of said first conductivity type having V-shaped groove; an elongated region of a second conductivity type opposite to said first conductivity type being at least formed at said V-shaped region and extending through said second and third layer into said first layer or extending through said third layer into said second layer.

Claim 22

The semiconductor laser of claim 20, wherein said structure comprises; a fourth layer of said second conductivity type being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate.

Claim 23

The semiconductor laser of claim 20, wherein said first layer comprises a thickened portion beneath said V-shaped region.

Claim 24

The semiconductor laser of claim 21, wherein said first layer comprises a thickened portion beneath said V-shaped region.

Claim 25

The semiconductor laser of claim 20, wherein a width of said V-shaped portion in contact with said second layer is less than 1 μm.

Claim 26

The semiconductor laser of claim 20, wherein said structure comprises; said substrate of high resistivity, a fifth layer being buried in said substrate and extending to a surface of said semiconductor laser; said first layer contacting to said fifth layer.

Claim 27

The semiconductor laser of claim 21, wherein said structure comprises: said substrate of high resistivity; a fifth layer being buried in said substrate and extending to a surface of said semiconductor laser; said first layer contacting to said fifth layer.

Claim 28

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5, wherein said structure comprises: said substrate, first layer, second layer and third layer of a high resistivity; a fourth layer of a first conductivity type extending through said second and third layers into said first layer; and an elongated fifth layer of a second conductivity type, opposite to said first conductivity type, extending through a portion of said fourth layer and said second layer.

Claim 29

The semiconductor laser of claim 27, wherein said first conductivity type is n type and said second conductivity type is p type.

Claim 30

The semiconductor laser of claim 28, wherein said substrate and said first, second and third layers are n-type layers.

Claim 31

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5, wherein said structure comprises: said substrate and said first, second and third layers being a first conductivity type; a fourth layer of said first conductivity type being formed between said first layer and second layer; a fifth layer of said first conductivity type being formed between said second layer and third layer; said fourth and fifth layers having a refractive index which decreases gradually from said active layer to said cladding layer; an elongated region of a second conductivity type, opposite to said first conductivity type, extending through said third, fifth and second layer into a portion of said fourth layer.

Claim 32

The semiconductor laser of claim 30, wherein; a refractive index distribution n(x) in said layers varies as n 0 (1-ax 2 ), where n 0 and a are constants and x is a distance from a center of said active layer in direction perpendicular to a junction plane.

Claim 33

The semiconductor laser of any one of claims 1, 2, 3, 4 and 5 wherein said structure comprises: said substrate and said first and third layers of a first conductivity type; said second layer of a second conductivity type opposite to said first conductivity type; a fourth layer of said second conductivity being formed between said first and second layers and having a wider band gap than that of said second layer; and an elongated fifth layer of said second conductivity type extending through said third layer into said second layer.

Claim 34

The semiconductor laser of claim 32 further comprising a high resistivity region formed outwardly of said fifth layer.

Claim 35

The semiconductor laser of claim 33, wherein a thickness of said fourth layer is approximately thicker than 100 Å.

Claim 36

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein: Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, and an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, said first layer comprises a thickened portion lying beneath said elongated region, and said fourth layer has the larger refractive index than said first layer.

Claim 37

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein: Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, and an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, said first layer comprises a thickened portion lying beneath said elongated region, and said fourth layer has the larger refractive index than said first layer.

Claim 38

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein; Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and said first conductivity type is n and said second conductivity type is p.

Claim 39

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein; Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and said first conductivity type is n and said second conductivity type is p.

Claim 40

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein; Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and wherein said structure further comprises: a fourth layer of a second conductivity type, opposite to said first conductivity type, being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate, and wherein a width of said elongated region is less than twice a diffusion length of an electron in said elongated region.

Claim 41

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein; Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, said substrate, said first layer, said second layer and said third layer are of a first conductivity type, an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and wherein said structure further comprises: a fourth layer of a second conductivity type, opposite to said first conductivity type, being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate, and wherein a width of said elongated region is less than twice a diffusion length of an electron in said elongated region.

Claim 42

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein: Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and said substrate, said first layer, said second layer and said third layer are of a first conductivity type; and an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and wherein said structure further comprises: a fourth layer of a second conductivity type, opposite to said first conductivity type, being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate; and said the semiconductor laser further comprising an insulating layer formed on said third layer.

Claim 43

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein: Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and said substrate, said first layer, said second layer and said third layer are of a first conductivity type; and an elongated region of a second conductivity type opposite to said first conductivity type extends through said second and third layers into said first layer or extends through said third layer into said second layer, and wherein said structure further comprises: a fourth layer of a second conductivity type, opposite to said first conductivity type, being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate; and said the semiconductor laser further comprising an insulating layer formed on said third layer.

Claim 44

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and wherein said structure comprises; said substrate, said first layer and said second layer of said first conductivity type; said third layer of said first conductivity type having V-shaped groove; an elongated region of a second conductivity type opposite to said first conductivity type being at least formed at said V-shaped region and extending through said second and third layer into said first layer or extending through said third layer into said second layer, and wherein a width of said V-shaped poriton in contact with said second layer is less than 1 μm.

Claim 45

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and wherein said structure comprises; said substrate, said first layer and said second layer of said first conductivity type; said third layer of said first conductivity type having V-shaped groove; an elongated region of a second conductivity type opposite to said first conductivity type being at least formed at said V-shaped region and extending through said second and third layer into said first layer or extending through said third layer into said second layer, and wherein a width of said V-shaped poriton in contact with said second layer is less than 1 μm.

Claim 46

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and wherein said structure comprises; a fourth layer of said second conductivity type being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate, and wherein a width of said V-shaped poriton in contact with said second layer is less than 1 μm.

Claim 47

A semiconductor laser having at least a first layer, being a cladding layer, formed on a substrate, a second layer, being an active layer, formed on said first layer, a third layer, being a cladding layer, formed on said second layer, wherein said cladding layers have a refractive index smaller than that of said active layer, and a product of a strip width and a length of a resonator is less than 130 (Eg B /Eg A )μm 2 and an effective reflectivity of √R 1 R 2 of end faces of said resonator is larger than 0.4 to restrict power dissipation of said semiconductor laser to about 1 mW or less, first electrode means electrically contacting said first layer, second electrode means electrically contacting said third layer, and wherein Eg B is a bandgap of GaAs, Eg A is a bandgap of the principle material of said active layer, and R 1 and R 2 are power reflectivities of said end faces, and wherein said structure comprises; a fourth layer of said second conductivity type being formed between said substrate and said first layer; said first layer extending through said fourth layer to said substrate, and wherein a width of said V-shaped poriton in contact with said second layer is less than 1 μm.