Multilayer metallization for silicon semiconductor devices including a diffusion barrier formed of amorphous tungsten/silicon

Claim 2

A metallization system suitable for silicon integrated circuits, which metallization system consistently exhibits low contact resistance in contracting P-type silicon surface regions, as well as N-type silicon surface regions, said metallization system comprising: an initial layer of a conductor selected from the group consisting of titanium, platinum silicide, tantalum silicide, and molybdenum silicide on the surface of a P-type contact region in a silicon substrate; a middle layer of amorphous tungsten/silicon on the initial layer, said amorphous tungsten/silicon middle layer having an amorphous to crystalline transition temperature; and an overlayer of a member selected from the group consisting of aluminum and aluminum alloys on the amorphous tungsten/silicon middle layer, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon.

Claim 3

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and platinum silicide on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum; and a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.

Claim 4

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and platinum silicide on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum; and a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.

Claim 5

A metallization system as recited in claim 2 wherein the first and second layers have a thickness not substantially greater than about 1,000 angstroms and the third layer has a thickness not substantially greater than about 20,000 angstroms.

Claim 6

A metallization system as recited in claim 2 wherein the first layer is titanium.

Claim 7

A metallization system as recited in claim 2 wherein the first layer is platinum silicide.

Claim 8

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and transition metal silicides on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum, wherein the proportions of the tungsten and silicon in the amorphous tungsten/silicon second layer are substantially eutectic proportions; and, a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.

Claim 9

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and transition metal silicides on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum, wherein the proportions of the tungsten and silicon in the amorphous tungsten/silicon second layer are substantially eutectic proportions; and, a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.

Claim 10

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and transition metal silicides on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum; wherein the first and second layers are each no greater than about 500 angstroms thick and the proportions of the tungsten and silicon in the amorphous tungsten/silicon second layer are substantially eutectic proportions; and a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.

Claim 11

A three layer aluminum-type metallization system for silicon integrated circuits that consistently exhibits low contact resistance in contacting P-type silicon regions, which metallization system comprises: a first layer of a material selected from the group consisting of titanium and transition metal silicides on the surface of a P-type contact region in a silicon substrate, which layer has low contact resistance to P-type silicon, low contact resistance to a subsequently applied amorphous tungsten/silicon layer, and good adhesion to both; a second layer of amorphous tungsten/silicon on the first layer to prevent interdiffusion between the silicon substrate and an overlying layer that contains aluminum; wherein the first and second layers are each no greater than about 500 angstroms thick and the proportions of the tungsten and silicon in the amorphous tungsten/silicon second layer are substantially eutectic proportions; and a third and relatively thicker layer, of an aluminum alloy containing silicon on the amorphous tungsten/silicon second layer and providing low electrical resistance lateral conductivity, effective to produce a metallization system that consistently provides adherent, low electrical resistance contacts on P-type silicon, as well as on N-type silicon, and such contacts exhibit enhanced thermal stability over a contact of such aluminum alloy directly on a silicon surface.