US5136361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stratified interconnect structure for integrated circuits
Assignee: Advanced Micro Devices Inc
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Filing: 1989-04-13
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Granted: 1992-08-04
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Expires: 2009-04-13
Abstract
Abstract A low resistance interconnect structure for integrated circuits formed by a composite layer of aluminum below and an amorphous compound of refractory metal and silicon above. In the process of manufacturing the interconnect structure, care must be taken so that an aluminum oxide layer is not formed between the aluminum and compound layers.
Inventors
- 👤 Donald L. Wollesen
- 👤 Craig S. Sander
- 👤 Jacob D. Haskell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
107 words
An improved interconnect structure device for integrated circuits having a substrate, said substrate having a surface, a plurality of active circuit component regions within the surface of said substrate, and having a first insulation layer over said substrate surface having apertures over preselected active regions, said improvement characterized by: a first layer of aluminum on said first insulating layer and in said apertures; and a layer of an amorphous compound of refractory metal and silicon on said first aluminum layer, wherein said aluminum layer and said compound layer form an interconnect structure on said first insulating layer and in said apertures for coupling said preselected active regions.
Claim 2
Dependent Claim
107 words
An improved interconnect structure device for integrated circuits having a substrate, said substrate having a surface, a plurality of active circuit component regions within the surface of said substrate, and having a first insulation layer over said substrate surface having apertures over preselected active regions, said improvement characterized by: a first layer of aluminum on said first insulating layer and in said apertures; and a layer of an amorphous compound of refractory metal and silicon on said first aluminum layer, wherein said aluminum layer and said compound layer form an interconnect structure on said first insulating layer and in said apertures for coupling said preselected active regions.
Claim 3
Dependent Claim
22 words
The device as in claim 1 wherein said layer of aluminum has a thickness in the range of 1000 to 2500 Angstroms.
Claim 4
Dependent Claim
23 words
The device as in claim 1 wherein said layer of said compound has a thickness in the range of 1000 to 2500 Angstroms.
Claim 5
Dependent Claim
43 words
The device as in claim 1 further comprising: a second insulating layer over said first insulating layer and said interconnect structure, and a second interconnect structure of aluminum on said second insulating layer further comprising said active regions and said first interconnect structure.
Claim 6
Dependent Claim
25 words
The device as in claim 4 wherein said metal in said compound layer comprises a refractory metal from the group consisting of molybdenum and tantalum.
Claim 7
Dependent Claim
37 words
The device as in claim 5 wherein said first aluminum layer has a thickness in the range of 500 to 3000 Angstroms and said compound layer has a thickness in the range of 1000 to 2500 Angstroms.
Claim 8
Dependent Claim
102 words
An integrated circuit having a silicon substrate, said substrate having a surface, a plurality of active regions within the surface of said substrate, a first silicon dioxide layer over said substrate surface and having at least one aperture exposing a preselected active region, a first conducting layer on said first silicon dioxide layer in a first predetermined pattern so that said first conducting layer contacts said preselected active region, said first conducting layer comprising: a first layer of aluminum on said first silicon dioxide layer, and a layer of an amorphous compound of refractory metal and silicon on said first aluminum layer.
Claim 9
Dependent Claim
102 words
An integrated circuit having a silicon substrate, said substrate having a surface, a plurality of active regions within the surface of said substrate, a first silicon dioxide layer over said substrate surface and having at least one aperture exposing a preselected active region, a first conducting layer on said first silicon dioxide layer in a first predetermined pattern so that said first conducting layer contacts said preselected active region, said first conducting layer comprising: a first layer of aluminum on said first silicon dioxide layer, and a layer of an amorphous compound of refractory metal and silicon on said first aluminum layer.
Claim 10
Dependent Claim
76 words
The device as in claim 7 further comprising: a second silicon dioxide layer over said first silicon dioxide layer and said first conducting layer and said first conducting layer, said second silicon dioxide layer having at least one opening exposing a preselected portion of said first conducting layer, and a second layer of aluminum on said second silicon dioxide layer in a second predetermined pattern so that said second aluminum layer contacts said first conducting layer.
Claim 11
Dependent Claim
38 words
The device as in claim 8 further comprising: a polysilicon layer in a third predetermined pattern between said first silicon dioxide layer and said substrate, and a third silicon dioxide layer between said polysilicon layer and said substrate.
Claim 12
Dependent Claim
87 words
An interconnect structure for an integrated circuit having a substrate, at least two active regions provided in the substrate, and an insulating layer provided on the substrate, the insulating layer having windows exposing selected active regions, comprising: an aluminum layer, provided on the insulating layer and in the windows, contacting the selected active regions; and a layer comprising an amorphous compound of a refractory metal and silicon provided on said aluminum layer, said aluminum and amorphous compound layers providing an electrical interconnection between the selected active regions.
Claim 13
Dependent Claim
87 words
An interconnect structure for an integrated circuit having a substrate, at least two active regions provided in the substrate, and an insulating layer provided on the substrate, the insulating layer having windows exposing selected active regions, comprising: an aluminum layer, provided on the insulating layer and in the windows, contacting the selected active regions; and a layer comprising an amorphous compound of a refractory metal and silicon provided on said aluminum layer, said aluminum and amorphous compound layers providing an electrical interconnection between the selected active regions.
Claim 14
Dependent Claim
30 words
An interconnect structure according to claim 10, wherein said electrical interconnection provided by said aluminum and amorphous compound layers has a sheet resistance of less than 0.5 ohms per square.
Claim 15
Dependent Claim
30 words
An interconnect structure according to claim 10, wherein: said aluminum layer has a thickness of approximately 1000-2500 Angstroms; and said amorphous compound layer has a thickness of approximately 1000-2500 Angstroms.
References Cited (Backward Citations)
US3614547A
Cited
US3881971A
Cited
US4057659A
Cited
US4146413A
Cited
US4180596A
Cited
US4128670A
Cited
US4276557A
Cited
US4348746A
Cited
GB2087148A
Cited
US4486946A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |