Abstract A tungsten or molybdenum electrical connector is attached to a surface of a semiconductor element adjacent an N-type region by a bonding layer comprised of aluminum. A tungsten or molybdenum refractory metal barrier layer is interposed between the bonding layer and the semiconductor surface, and thin refractory metal silicide layers are interposed between the bonding layer and the electrical connector and barrier layer. The bonding layer may be formed of an alloy of silicon and aluminum. An aluminum preform may be initially stacked between the refractory metal surfaces to form the bonding layer. The refractory metal silicide may be formed before bonding or may be formed by reaction of silicon with the refractory metal surfaces during bonding. The resulting electrical connection formed exhibits reduced internal resistance.
Inventors
👤 John E May
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-29 14:12
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
16 words
A low resistance ohmic connection according to claim 1 in which said semiconductor element comprises silicon.
Claim 2
Dependent Claim
21 words
A low resistance ohmic connection according to claim 1 in which said bonding layer comprises an alloy of aluminum and silicon.
Claim 3
Dependent Claim
56 words
A low resistance ohmic connection according to claim 1 additionally including an electrical contact means comprising a refractory metal, chosen from the class consisting of tungsten and molybdenum, bonded to said semiconductor element with a layer comprised of a silicide of said refractory metal interposed between and adhered to said bonding layer and said contact means.
Claim 4
Dependent Claim
97 words
A low resistance ohmic connection for a silicon semiconductor element having adjacent one surface portion an N-type conductivity region of less than 1021 N-type impurity atoms per cubic centimeter comprising a layer which comprises tungsten on said surface portion, a tungsten electrical connector, tungsten silicide layers formed on the adjacent surfaces of the tungsten layer and the tungsten electrical connector, and a layer comprising aluminum bonding said tungsten silicide layers on said adjacent surfaces of said tungsten layer and said tungsten electrical connector to bond said tungsten electrical connector to said surface portion of the semiconductor element.