Patent US5366852A successfully refreshed from Google Patents.
US5366852A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods for treating photoresists
Assignee: MCNC Research and Development Institute
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Filing: 1992-09-21
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Granted: 1994-11-22
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Expires: 2012-09-21
Abstract
Abstract The present invention comprises methods for treating photoresists and forming photoresist relief images, including a method comprising providing a photoresist coating having a crosslinked surface layer, treating the photoresist coating with an organometallic material, and developing the photoresist coating to provide a relief image comprising an etch resistant effective amount of organometallic material.
Inventors
- 👤 Edward K. Pavelchek
- 👤 Peter W. Freeman
- 👤 John F. Bohland
- 👤 Susan K. Jones
- 👤 Bruce W. Dudley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:59
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/36
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
102 words
A method of dry developing a photoresist coating using an organometallic material comprising: (a) applying a coating of a negative-acting photoresist composition on a substrate; (b) exposing the photoresist to patterned activating radiation to crosslink the photoresist coating where exposed; (c) partially developing the photoresist coating to form depressions in the photoresist coating by removal of a portion only of unexposed areas of the photoresist coating; (d) filling the depressions within the partially developed photoresist coating with organometallic material; and (e) dry developing the photoresist coating to provide a relief image comprising organometallic material overlying the unexposed portions of the photoresist coating.
Claim 2
Independent Claim
102 words
A method of dry developing a photoresist coating using an organometallic material comprising: (a) applying a coating of a negative-acting photoresist composition on a substrate; (b) exposing the photoresist to patterned activating radiation to crosslink the photoresist coating where exposed; (c) partially developing the photoresist coating to form depressions in the photoresist coating by removal of a portion only of unexposed areas of the photoresist coating; (d) filling the depressions within the partially developed photoresist coating with organometallic material; and (e) dry developing the photoresist coating to provide a relief image comprising organometallic material overlying the unexposed portions of the photoresist coating.
Claim 3
Dependent Claim
15 words
The method of claim 1 where photoresist coating is partially developed with a developer solution.
Claim 4
Dependent Claim
31 words
The method of claim 1 where areas of the photoresist coating that are not partially developed are essentially free of organometallic material after treatment of the photoresist coating with the same.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |