Crystal articles and method for forming the same

Claim 1

A method for forming a crystal article on a substrate which comprises: (a) forming on said substrate a free surface having a nonnucleation surface; (b) forming in said nonnucleation surface at least one amorphous single nucleation surface for forming a monocrystal by ion implanting a material in said nonnucleation surface having a nucleation density substantially larger than the material constituting said nonnucleation surface; and at least one amorphous multiple nucleation surface for forming a polycrystal by implanting a material in said nonnucleation surface having a nucleation density substantially larger than the material constituting said nonnucleation surface; wherein each said amorphous single nucleation surface has an area of sufficient size and a nucleation density sufficiently larger than the nucleation density of said nonnucleation surface to selectively form a single nucleus for growing said monocrystal and each said amorphous multiple nucleation surface has an area of sufficient size and a nucleation density sufficiently larger than the nucleation density of said nonnucleation surface to selectively form plural nuclei thereon for growing said polycrystal; (c) simultaneously vapor depositing each said single nucleus for forming each said monocrystal on each said amorphous single nucleation surface and each said plural nuclei for forming each said polycrystal on each said multiple nucleation surface; and (d) simultaneously growing by vapor deposition each said monocrystal from each said vapor deposited single nucleus and each said polycrystal from each said vapor deposited plural nuclei, wherein each said monocrystal is overgrown on said nonnucleation surface.

Claim 2

A method for forming a crystal article on a substrate which comprises: (a) forming on said substrate a free surface having a nonnucleation surface; (b) forming in said nonnucleation surface at least one amorphous single nucleation surface for forming a monocrystal by ion implanting a material in said nonnucleation surface having a nucleation density substantially larger than the material constituting said nonnucleation surface; and at least one amorphous multiple nucleation surface for forming a polycrystal by implanting a material in said nonnucleation surface having a nucleation density substantially larger than the material constituting said nonnucleation surface; wherein each said amorphous single nucleation surface has an area of sufficient size and a nucleation density sufficiently larger than the nucleation density of said nonnucleation surface to selectively form a single nucleus for growing said monocrystal and each said amorphous multiple nucleation surface has an area of sufficient size and a nucleation density sufficiently larger than the nucleation density of said nonnucleation surface to selectively form plural nuclei thereon for growing said polycrystal; (c) simultaneously vapor depositing each said single nucleus for forming each said monocrystal on each said amorphous single nucleation surface and each said plural nuclei for forming each said polycrystal on each said multiple nucleation surface; and (d) simultaneously growing by vapor deposition each said monocrystal from each said vapor deposited single nucleus and each said polycrystal from each said vapor deposited plural nuclei, wherein each said monocrystal is overgrown on said nonnucleation surface.

Claim 4

The method of forming a crystal article of any one of claims 1 or 2, wherein the position and size of each said monocrystal are controlled by the spacing between said single nucleation surface and multiple nucleation surface.