US5356513A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polishstop planarization method and structure
Assignee: International Business Machines Corp
•
Filing: 1993-04-22
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Granted: 1994-10-18
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Expires: 2013-04-22
Abstract
Abstract The invention provides a method for producing a substantially planar surface overlying features of a semiconductor structure. The method comprises forming alternating layers of a hard polishing material and a soft polishing material over the features of the semiconductor structure, and then polishing the alternating layers to form a substantially planar surface over the features. The method takes advantage of the polish rates of the various materials used as alternating layers to enhance the planarization process.
Inventors
- 👤 Peter A. Burke
- 👤 Michael A. Leach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:52
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
138 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise a conformal first layer of a hard polishing material overlying said features of said semiconductor structure, a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material, and a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material, and wherein said first layer comprises silicon dioxide, said second layer comprises phosphosilicate glass, and said third layer comprises silicon nitride; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 2
Independent Claim
138 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise a conformal first layer of a hard polishing material overlying said features of said semiconductor structure, a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material, and a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material, and wherein said first layer comprises silicon dioxide, said second layer comprises phosphosilicate glass, and said third layer comprises silicon nitride; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 3
Independent Claim
153 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a hard polishing material overlying said features of said semiconductor structure; a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material; a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material; a conformal fourth layer of a soft polishing material overlying said third layer of a hard polishing material; and a conformal fifth layer of a hard polishing material overlying said fourth layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 4
Independent Claim
153 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a hard polishing material overlying said features of said semiconductor structure; a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material; a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material; a conformal fourth layer of a soft polishing material overlying said third layer of a hard polishing material; and a conformal fifth layer of a hard polishing material overlying said fourth layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 5
Dependent Claim
31 words
The method of claim 2 wherein said first layer comprises silicon dioxide, said second and fourth layers each comprise phosphosilicate glass, and said third and fifth layers each comprise silicon nitride.
Claim 6
Dependent Claim
128 words
The method of claim 2 wherein said polishing comprises: polishing said fifth layer to reveal said fourth layer; polishing said fourth layer positioned over said raised portions so as to reveal said third layer positioned over said raised portions; removing said third layer positioned over said raised portions so as to reveal said second layer positioned over said raised portions; and polishing said fourth layer positioned over said recessed portions so as to reveal said third layer positioned over said recessed portions, and polishing said second layer positioned over said raised portions to reveal said first layer positioned over said raised portions, wherein said third layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 7
Dependent Claim
17 words
The method of claim 4 wherein removing said third layer comprises etching selective for said third layer.
Claim 8
Dependent Claim
54 words
The method of claim 4 further comprising removing said third layer positioned over said recessed portions so as to reveal said second layer positioned over said recessed portions, wherein said second layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 9
Dependent Claim
22 words
The method of claim 6 wherein removing said third layer comprises etching selective for said third layer or polishing said third layer.
Claim 10
Independent Claim
190 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a hard polishing material overlying said features of said semiconductor structure; a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material; and a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features, wherein said polishing comprises: polishing said third layer positioned over said raised portions so as to reveal said second layer positioned over said raised portions; and polishing said second layer positioned over said raised portions so as to reveal said first layer positioned over said raised portions, wherein said third layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 11
Independent Claim
190 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a hard polishing material overlying said features of said semiconductor structure; a conformal second layer of a soft polishing material overlying said first layer of a hard polishing material; and a conformal third layer of a hard polishing material overlying said second layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features, wherein said polishing comprises: polishing said third layer positioned over said raised portions so as to reveal said second layer positioned over said raised portions; and polishing said second layer positioned over said raised portions so as to reveal said first layer positioned over said raised portions, wherein said third layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 12
Dependent Claim
54 words
The method of claim 8 further comprising polishing said third layer positioned over said recessed portions so as to reveal said second layer positioned over said recessed portions, wherein said second layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 13
Independent Claim
160 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: sequentially, in an unbroken sequence, forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; and a conformal fifth layer of a soft polishing material overlying said fourth layer of a hard polishing material; and polishing said sequentially formed alternating layers so as to create a substantially planar surface over said features.
Claim 14
Independent Claim
160 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: sequentially, in an unbroken sequence, forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; and a conformal fifth layer of a soft polishing material overlying said fourth layer of a hard polishing material; and polishing said sequentially formed alternating layers so as to create a substantially planar surface over said features.
Claim 15
Independent Claim
171 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including radioed and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; a conformal fifth layer of a soft polishing material overlying said fourth layer of a hard polishing material; and a conformal sixth layer of a hard polishing material overlying said fifth layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 16
Independent Claim
171 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including radioed and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; a conformal fifth layer of a soft polishing material overlying said fourth layer of a hard polishing material; and a conformal sixth layer of a hard polishing material overlying said fifth layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features.
Claim 17
Dependent Claim
128 words
The method of claim 11 wherein said polishing comprises: polishing said sixth layer to reveal said fifth layer; polishing said fifth layer positioned over said raised portions so as to reveal said fourth layer positioned over said raised portions; removing said fourth layer positioned over said raised portions so as to reveal said third layer positioned over said raised portions; and polishing said fifth layer positioned over said recessed portions so as to reveal said fourth layer positioned over said recessed portions, and polishing said third layer positioned over said raised portions to reveal said second layer positioned over said raised portions, wherein said fourth layer positioned over said recessed portions and said second layer positioned over said raised portions form the substantially planar surface over said features.
Claim 18
Dependent Claim
17 words
The method of claim 12 wherein removing said fourth layer comprises etching selective for said fourth layer.
Claim 19
Dependent Claim
54 words
The method of claim 12 further comprising removing said fourth layer positioned over said recessed portions so as to reveal said third layer positioned over said recessed portions, wherein said third layer positioned over said recessed portions and said second layer positioned over said raised portions form the substantially planar surface over said features.
Claim 20
Dependent Claim
22 words
The method of claim 14 wherein removing said fourth layer comprises etching selective for said fourth layer or polishing said fourth layer.
Claim 21
Independent Claim
208 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; and a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features, wherein said polishing comprises: polishing said fourth layer positioned over said raised portions so as to reveal said third layer positioned over said raised portions; and polishing said third layer positioned over said raised portions so as to reveal said second layer positioned over said raised portions; wherein said fourth layer positioned over said recessed portions and said second layer positioned over said raised portions form the substantially planar surface over said features.
Claim 22
Independent Claim
208 words
A method for producing a substantially planar surface overlying features of a semiconductor structure, which method comprises: forming alternating layers of a hard polishing material and a soft polishing material over features of a semiconductor structure, said features including raised and recessed portions, wherein said alternating layers comprise: a conformal first layer of a soft polishing material overlying said features of said semiconductor structure; a conformal second layer of a hard polishing material overlying said first layer of a soft polishing material; a conformal third layer of a soft polishing material overlying said second layer of a hard polishing material; and a conformal fourth layer of a hard polishing material overlying said third layer of a soft polishing material; and polishing said alternating layers so as to create a substantially planar surface over said features, wherein said polishing comprises: polishing said fourth layer positioned over said raised portions so as to reveal said third layer positioned over said raised portions; and polishing said third layer positioned over said raised portions so as to reveal said second layer positioned over said raised portions; wherein said fourth layer positioned over said recessed portions and said second layer positioned over said raised portions form the substantially planar surface over said features.
Claim 23
Dependent Claim
54 words
The method of claim 16 further comprising removing said fourth layer positioned over said recessed portions so as to reveal said third layer positioned over said recessed portions, wherein said third layer positioned over said recessed portions and said first layer positioned over said raised portions form the substantially planar surface over said features.
Claim 24
Dependent Claim
22 words
The method of claim 17 wherein removing said fourth layer comprises etching selective for said fourth layer or polishing said fourth layer.
Claim 25
Dependent Claim
26 words
The method of claim 1, 2, 8, 10, 11 or 16 wherein a via is etched in said alternating layers prior to polishing said alternating layers.
Claim 26
Dependent Claim
12 words
The method of claim 19 wherein said via is filled with tungsten.
Claim 27
Dependent Claim
19 words
The method of claim 1, 2, 8, 10, 11 or 16 wherein said polishing process comprises chemical mechanical polishing.
Claim 28
Dependent Claim
34 words
The method of claim 2, 8, 10, 11 or 16 wherein said hard polishing material is selected from the group consisting of silicon nitride, silicon carbide, diamond like carbon, alumina, tungsten, and silicon dioxide.
Claim 29
Dependent Claim
18 words
The method of claim 2, 8, 10, 11 or 16 wherein said soft polishing material comprises a dielectric.
Claim 30
Dependent Claim
25 words
The method of claim 23 wherein said dielectric is selected from the group consisting of silicon dioxide, phosphosilicate glass, borophosphosilicate glass, sputtered quartz and polyimide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |