Method of manufacturing semiconductor device using chemical-mechanical polishing

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a surface of a monocrystalline silicon substrate, said insulating layer having an upper surface and having first and second apertures from said upper surface to said surface of said substrate to expose parts of said surface of said substrate, said first and second apertures having different areas from each other; forming selectively first and second monocrystalline silicon layers from said exposed surface parts of said substrate by using said exposed surface parts of said substrate as seeds, respectively, through selective epitaxial growing method, said first and second monocrystalline silicon layers having upper portions positioned at higher levels than said upper surface of said insulating layer, respectively, and said first and second monocrystalline silicon layers being separated from each other so as to expose selectively said upper surface of said insulating layer; forming a polycrystalline silicon layer as a first sacrificial layer covering and attached to said upper portions of said first and second monocrystalline silicon layers and said exposed upper surface of said insulating layer, entirely; forming a leveling material as a second sacrificial layer made of styrene series covering and attached to an upper surface of said polycrystalline silicon layer entirely, said leveling material having an upper surface flatter than said upper surface of said polycrystalline silicon layer; carrying out a reactive ion etching to remove said leveling material entirely, said polycrystalline silicon layer partially and said upper portions of said first and second monocrystalline silicon layers partially so as to form a first flat surface including upper surfaces of remaining said first and second monocrystalline silicon and polycrystalline silicon layers, said first flat surface being positioned at a higher level than said upper surface of said insulating layer; and carrying out a chemical-mechanical polishing by using a polishing pad which moves in parallel relation to said upper surface of said insulating layer, said chemical-mechanical polishing being conducted from said first flat surface up to said upper surface of said insulating layer so as to remove said polycrystalline silicon layer entirely and to form a second flat surface including said upper surface of said insulating layer and upper surfaces of remaining said lower portions of said first and second monocrystalline silicon layers.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a surface of a monocrystalline silicon substrate, said insulating layer having an upper surface and having first and second apertures from said upper surface to said surface of said substrate to expose parts of said surface of said substrate, said first and second apertures having different areas from each other; forming selectively first and second monocrystalline silicon layers from said exposed surface parts of said substrate by using said exposed surface parts of said substrate as seeds, respectively, through selective epitaxial growing method, said first and second monocrystalline silicon layers having upper portions positioned at higher levels than said upper surface of said insulating layer, respectively, and said first and second monocrystalline silicon layers being separated from each other so as to expose selectively said upper surface of said insulating layer; forming a polycrystalline silicon layer as a first sacrificial layer covering and attached to said upper portions of said first and second monocrystalline silicon layers and said exposed upper surface of said insulating layer, entirely; forming a leveling material as a second sacrificial layer made of styrene series covering and attached to an upper surface of said polycrystalline silicon layer entirely, said leveling material having an upper surface flatter than said upper surface of said polycrystalline silicon layer; carrying out a reactive ion etching to remove said leveling material entirely, said polycrystalline silicon layer partially and said upper portions of said first and second monocrystalline silicon layers partially so as to form a first flat surface including upper surfaces of remaining said first and second monocrystalline silicon and polycrystalline silicon layers, said first flat surface being positioned at a higher level than said upper surface of said insulating layer; and carrying out a chemical-mechanical polishing by using a polishing pad which moves in parallel relation to said upper surface of said insulating layer, said chemical-mechanical polishing being conducted from said first flat surface up to said upper surface of said insulating layer so as to remove said polycrystalline silicon layer entirely and to form a second flat surface including said upper surface of said insulating layer and upper surfaces of remaining said lower portions of said first and second monocrystalline silicon layers.

Claim 5

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a major surface of a monocrystalline silicon substrate, said insulating film having an upper surface, forming an aperture in said insulating film from said upper surface to expose said major surface of said substrate, growing a monocrystalline silicon layer by a vapor phase epitaxy method in said aperture and on selective portions of said upper surface of said insulating film near said aperture such that other portions of said upper surface of said insulating film remote from said aperture are exposed without forming said monocrystalline silicon layer thereon, depositing a polycrystalline silicon layer as a first sacrificial layer on said monocrystalline silicon layer and on said exposed portions of said upper surface of said insulating film, entirely, forming a leveling material layer as a second sacrificial layer on the upper surface of said polycrystalline silicon layer entirely, said leveling material layer having a nature to flatten its upper surface flatter than said upper surface of said polycrystalline silicon layer, conducting a reactive ion etching on said leveling material layer and on said polycrystalline and monocrystalline silicon layers in a condition of all of said layers being etched with a substantially equal etching speed to each other to remove entirely said leveling material layer, partially said polycrystalline silicon layer and partially said monocrystalline layer and to form a first flat surface including said monocrystalline silicon layer and said polycrystalline silicon layer, and conducting a chemical-mechanical polishing by using a polishing pad which moves in parallel relation to said upper surface of said insulating film on remaining said monocrystalline silicon layer and said polycrystalline silicon layer up to said upper surface of said insulating film to remove entirely said polycrystalline silicon layer and partially said monocrystalline layer and to form a second flat surface including said insulating film and said monocrystalline silicon layer which is formed within said aperture.

Claim 6

A method of manufacturing a semiconductor device comprising the steps of: forming an insulating film on a major surface of a monocrystalline silicon substrate, said insulating film having an upper surface, forming an aperture in said insulating film from said upper surface to expose said major surface of said substrate, growing a monocrystalline silicon layer by a vapor phase epitaxy method in said aperture and on selective portions of said upper surface of said insulating film near said aperture such that other portions of said upper surface of said insulating film remote from said aperture are exposed without forming said monocrystalline silicon layer thereon, depositing a polycrystalline silicon layer as a first sacrificial layer on said monocrystalline silicon layer and on said exposed portions of said upper surface of said insulating film, entirely, forming a leveling material layer as a second sacrificial layer on the upper surface of said polycrystalline silicon layer entirely, said leveling material layer having a nature to flatten its upper surface flatter than said upper surface of said polycrystalline silicon layer, conducting a reactive ion etching on said leveling material layer and on said polycrystalline and monocrystalline silicon layers in a condition of all of said layers being etched with a substantially equal etching speed to each other to remove entirely said leveling material layer, partially said polycrystalline silicon layer and partially said monocrystalline layer and to form a first flat surface including said monocrystalline silicon layer and said polycrystalline silicon layer, and conducting a chemical-mechanical polishing by using a polishing pad which moves in parallel relation to said upper surface of said insulating film on remaining said monocrystalline silicon layer and said polycrystalline silicon layer up to said upper surface of said insulating film to remove entirely said polycrystalline silicon layer and partially said monocrystalline layer and to form a second flat surface including said insulating film and said monocrystalline silicon layer which is formed within said aperture.