US5346838A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating an insulated gate control thyristor
Assignee: Fuji Electric Co Ltd
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Filing: 1993-10-28
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Granted: 1994-09-13
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Expires: 2013-10-28
Abstract
Abstract An insulated gate control thyristor including an n-type base region, an insulating layer, gates formed on the insulating layer, first and second windows formed in the insulating layer, p-type emitter layers and n-type cathode layers diffused into the base region from the first windows, and p-type collector layers diffused into the base region from the second windows. The emitter layer and the collector layer are disposed in close proximity to each other under the gate so that a channel is formed which is conducted when the thyristor is turned off. The turn-off of the thyristor speeds up and becomes reliable, and the quality control of the process steps for fabricating the thyristor becomes easier.
Inventors
- 👤 Katsunori Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:27
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/60; H10D18/65; H10D18/655
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
210 words
A method for fabricating an insulated gate control thyristor comprising the steps of: forming an anode region of a first conductivity type; forming a base region of a second conductivity type to produce a junction with said anode region; forming an insulating layer on a surface of said base region; forming a plurality of gates on said insulating layer; forming a plurality of first windows and a plurality of second windows in said insulating layer in such a manner that each one of said plurality of first windows and each one of said plurality of second windows are adjacent to each one of said plurality of gates; forming a plurality of emitter layers by diffusing impurities of the first conductivity type into said base region from said plurality of first windows; forming a plurality of cathode layers by diffusing impurities of the second conductivity type into said plurality of emitter layers; forming a plurality of collector layers by diffusing impurities of the first conductivity type into said base region from said plurality of second windows; connecting an anode terminal to said anode region; connecting a cathode terminal to said plurality of cathode layers and to said plurality of collector layers; and connecting a gate terminal to said plurality of gates.
Claim 2
Independent Claim
210 words
A method for fabricating an insulated gate control thyristor comprising the steps of: forming an anode region of a first conductivity type; forming a base region of a second conductivity type to produce a junction with said anode region; forming an insulating layer on a surface of said base region; forming a plurality of gates on said insulating layer; forming a plurality of first windows and a plurality of second windows in said insulating layer in such a manner that each one of said plurality of first windows and each one of said plurality of second windows are adjacent to each one of said plurality of gates; forming a plurality of emitter layers by diffusing impurities of the first conductivity type into said base region from said plurality of first windows; forming a plurality of cathode layers by diffusing impurities of the second conductivity type into said plurality of emitter layers; forming a plurality of collector layers by diffusing impurities of the first conductivity type into said base region from said plurality of second windows; connecting an anode terminal to said anode region; connecting a cathode terminal to said plurality of cathode layers and to said plurality of collector layers; and connecting a gate terminal to said plurality of gates.
Claim 3
Dependent Claim
48 words
A method for fabricating an insulated gate control thyristor as claimed in claim 1, wherein steps of forming said plurality of emitter layers, forming said plurality of collector layers and forming said plurality of cathode layers include an annealing process which is carried out at the same time.
Claim 4
Independent Claim
226 words
A method for fabricating an insulated gate control thyristor comprising the steps of: forming an anode region of a first conductivity type; forming a base region of a second conductivity type to produce a junction with said anode region; forming an insulating layer on a surface of said base region; forming a plurality of gates on said insulating layer; forming a plurality of first windows and a plurality of second windows in said insulating layer in such a manner that one of said plurality of first windows, one of said plurality of gates, one of said plurality of second windows, one of said plurality of gates, one of said plurality of first windows and one of said plurality of gates are disposed successively; forming a plurality of emitter layers by diffusing impurities of the first conductivity type into said base region from said plurality of first windows; forming a plurality of cathode layers by diffusing impurities of the second conductivity type into said plurality of emitter layers; forming a plurality of collector layers by diffusing impurities of the first conductivity type into said base region from said plurality of second windows; connecting an anode terminal to said anode region; connecting a cathode terminal to said plurality of cathode layers and to said plurality of collector layers; and connecting a gate terminal to said plurality of gates.
Claim 5
Independent Claim
226 words
A method for fabricating an insulated gate control thyristor comprising the steps of: forming an anode region of a first conductivity type; forming a base region of a second conductivity type to produce a junction with said anode region; forming an insulating layer on a surface of said base region; forming a plurality of gates on said insulating layer; forming a plurality of first windows and a plurality of second windows in said insulating layer in such a manner that one of said plurality of first windows, one of said plurality of gates, one of said plurality of second windows, one of said plurality of gates, one of said plurality of first windows and one of said plurality of gates are disposed successively; forming a plurality of emitter layers by diffusing impurities of the first conductivity type into said base region from said plurality of first windows; forming a plurality of cathode layers by diffusing impurities of the second conductivity type into said plurality of emitter layers; forming a plurality of collector layers by diffusing impurities of the first conductivity type into said base region from said plurality of second windows; connecting an anode terminal to said anode region; connecting a cathode terminal to said plurality of cathode layers and to said plurality of collector layers; and connecting a gate terminal to said plurality of gates.
Claim 6
Dependent Claim
49 words
A method for fabricating an insulated gate control thyristor as claimed in claim 3, wherein a width of each gate between said plurality of first windows is longer than that of each gate between one of said plurality of first windows and one of said plurality of second windows.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |