US5194394A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thyristor and method of manufacturing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1992-01-30
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Granted: 1993-03-16
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Expires: 2012-01-30
Abstract
Abstract A thyristor of the present invention turns on by applying a specified voltage to a first control electrode and turns off by applying a specified voltage to a second control electrode. These first and second control electrodes are independent of each other, so that the turning-on and turning-off conditions can be determined independently. When a transistor having the second control electrode is turned on by applying the specified voltage to the second control electrode until just before the turning-on, a first main electrode and a first semiconductor region can be electrically connected, so that the back gate potential of the transistor having the first control electrode can be fixed at the potential of the first main electrode.
Inventors
- 👤 Tomohide Terashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:32
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0102; H10D84/0105; H10D18/00; H10D18/60; H10D18/65; H10D18/655; Y; Y10; Y10S; Y10S148/00; Y10S148/126
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
232 words
A method of manufacturing a thyristor, comprising the steps of: (a) preparing a first semiconductor layer of a first conductivity type, having first and second major surfaces; (b) forming a second semiconductor layer of a second conductivity type on said first major surface of said first semiconductor layer; (c) selectively forming a first semiconductor region of the first conductivity type on a surface of said second semiconductor layer; (d) selectively forming second and third semiconductor regions of the second conductivity type on a surface of said first semiconductor region separately from each other; (e) forming a first insulating film on the surface of said first semiconductor region between said second semiconductor layer and said second semiconductor region; (f) forming a second insulating film on the surface of said first semiconductor region between said second semiconductor region and said third semiconductor region; (g) forming first and second control electrodes on said first and second insulating films, respectively; (h) forming a first main electrode on said second semiconductor region; (i) forming a conductive layer on said first semiconductor region and said third semiconductor region; and (j) forming a second main electrode on said second major surface of said first semiconductor layer; wherein said second semiconductor region is composed of a plurality of regions discretely formed, and said conductive layer is formed on the surface of said first semiconductor region between said plurality of regions.
Claim 2
Independent Claim
232 words
A method of manufacturing a thyristor, comprising the steps of: (a) preparing a first semiconductor layer of a first conductivity type, having first and second major surfaces; (b) forming a second semiconductor layer of a second conductivity type on said first major surface of said first semiconductor layer; (c) selectively forming a first semiconductor region of the first conductivity type on a surface of said second semiconductor layer; (d) selectively forming second and third semiconductor regions of the second conductivity type on a surface of said first semiconductor region separately from each other; (e) forming a first insulating film on the surface of said first semiconductor region between said second semiconductor layer and said second semiconductor region; (f) forming a second insulating film on the surface of said first semiconductor region between said second semiconductor region and said third semiconductor region; (g) forming first and second control electrodes on said first and second insulating films, respectively; (h) forming a first main electrode on said second semiconductor region; (i) forming a conductive layer on said first semiconductor region and said third semiconductor region; and (j) forming a second main electrode on said second major surface of said first semiconductor layer; wherein said second semiconductor region is composed of a plurality of regions discretely formed, and said conductive layer is formed on the surface of said first semiconductor region between said plurality of regions.
Claim 3
Dependent Claim
25 words
A method of manufacturing a thyristor in accordance with claim 1, wherein said third semiconductor region is composed of a plurality of regions discretely formed.
Claim 4
Dependent Claim
65 words
A method of manufacturing a thyristor in accordance with claim 2, further comprising the step of; (k) forming a high impurity concentration region of the first conductivity type on the surface of said first semiconductor region; said step (i) includes the step of forming said conductive layer on said first semiconductor region as well as said high impurity concentration region, and said third semiconductor region.
Claim 5
Dependent Claim
29 words
A method of manufacturing a thyristor in accordance with claim 1, wherein said first conductivity type is a p type, and said second conductivity type is an n type.
References Cited (Backward Citations)
EP0068945A1
Cited
US4644637A
Cited
JPS61198781A
Cited
US4760431A
Cited
JPS6276557A
Cited
EP0219995A2
Cited
DE3711033A1
Cited
JPS6353972A
Cited
JPS63209169A
Cited
EP0280535A2
Cited
US4847671A
Cited
US4912541A
Cited
US4857977A
Cited
US4963972A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-03-15 | 1996-09-14 | 1997-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-15 | 2000-09-14 | 2001-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-15 | 2004-09-14 | 2005-03-16 | $7700.00 | Window Closed / Lapsed |