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US5332695A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing semi conductor device mounted on a heat sink

Assignee: Mitsubishi Electric Corp
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Filing: 1993-05-24
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Granted: 1994-07-26
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Expires: 2013-05-24
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Abstract

Abstract A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element incudes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

Inventors

  • 👤 Kimio Shigihara
  • 👤 Yutaka Nagai
  • 👤 Toshitaka Aoyagi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 10:52
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/253; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/0235; H01S5/02355; H10W40/01; H10W40/03; H10W40/037; H01S5/0014; H01S5/0021; H01S5/0237; H01S5/024; H01S5/02476; H01S5/02484; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 96 words
A method for manufacturing a semiconductor device radiating heat generated by the semiconductor device comprising: depositing a first metal film on a heat sink for radiating heat; depositing an amorphous semiconductor film on said first metal film; depositing a second metal film on said amorphous semiconductor film; placing a semiconductor element on said second metal film; and pressing said semiconductor element against said heat sink while heating so that alloys are formed at the boundaries between said first and second metal films and said amorphous semiconductor film, thereby bonding said semiconductor element to said heat sink.
Claim 2
Independent Claim 96 words
A method for manufacturing a semiconductor device radiating heat generated by the semiconductor device comprising: depositing a first metal film on a heat sink for radiating heat; depositing an amorphous semiconductor film on said first metal film; depositing a second metal film on said amorphous semiconductor film; placing a semiconductor element on said second metal film; and pressing said semiconductor element against said heat sink while heating so that alloys are formed at the boundaries between said first and second metal films and said amorphous semiconductor film, thereby bonding said semiconductor element to said heat sink.
Claim 3
Dependent Claim 26 words
A method for manufacturing a semiconductor device in accordance with claim 1 including depositing one of amorphous silicon and amorphous germanium as said amorphous semiconductor film.
Claim 4
Dependent Claim 26 words
A method for manufacturing a semiconductor device in accordance with claim 2 including depositing said amorphous semiconductor film by one of electron beam evaporation and sputtering.
Claim 5
Dependent Claim 31 words
A method for manufacturing a semiconductor device in accordance with claim 3, including heating said first metal film to a temperature of approximately 200° C. while depositing said amorphous semiconductor film.
Claim 6
Dependent Claim 36 words
A method for manufacturing a semiconductor device in accordance with claim 2 wherein said second metal film is a gold film disposed on an electrode of said semiconductor element in contact with said amorphous semiconductor film.
Claim 7
Independent Claim 76 words
A method for manufacturing a semiconductor device radiating heat generated by the semiconductor device comprising: depositing a first metal film on a heat sink for radiating heat; depositing an amorphous semiconductor film on said first metal film; depositing a second metal film on said amorphous semiconductor film; placing a semiconductor element on said second metal film; and pressing said semiconductor element against said heat sink while heating, thereby bonding said semiconductor element to said heat sink.
Claim 8
Independent Claim 76 words
A method for manufacturing a semiconductor device radiating heat generated by the semiconductor device comprising: depositing a first metal film on a heat sink for radiating heat; depositing an amorphous semiconductor film on said first metal film; depositing a second metal film on said amorphous semiconductor film; placing a semiconductor element on said second metal film; and pressing said semiconductor element against said heat sink while heating, thereby bonding said semiconductor element to said heat sink.
Claim 9
Dependent Claim 26 words
A method for manufacturing a semiconductor device in accordance with claim 6 including depositing one of amorphous silicon and amorphous germanium as said amorphous semiconductor film.
Claim 10
Dependent Claim 26 words
A method for manufacturing a semiconductor device in accordance with claim 7 including depositing said amorphous semiconductor film by one of electron beam evaporation and sputtering.
Claim 11
Dependent Claim 31 words
A method for manufacturing a semiconductor device in accordance with claim 8, including heating said first metal film to a temperature of approximately 200° C. while depositing said amorphous semiconductor film.

References Cited (Backward Citations)

US4698662A Cited
WO1988001437A1 Cited
US5134018A Cited
US4914668A Cited
US4947238A Cited
US4861426A Cited
US5031029A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-07-25 1998-01-24 1998-07-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-07-25 2002-01-24 2002-07-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-07-25 2006-01-24 2006-07-26 $7700.00 Window Closed / Lapsed

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